Produits Toshiba Semiconductor and Storage - Diodes - Redresseurs - Simples

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CMS03(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-128	Stock315 390	30V	3A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS10(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-128	Stock22 584	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	50pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS09(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 90pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-123F	Stock149 784	30V	1.5A	460mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	90pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS06(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 125°C	paquet: SOD-123F	Stock3 276 000	20V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	60pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CRS01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 30V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 125°C	paquet: SOD-123F	Stock1 194 996	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	40pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
1SS307E,L3F	Toshiba Semiconductor and Storage	DIODE SW GP 80V 100MA ESC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10nA @ 80V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SC-79 Operating Temperature - Junction: 150°C (Max)	paquet: SC-79, SOD-523	Stock80 424	80V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10nA @ 80V	6pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SC-79	150°C (Max)
CUS15S30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock22 830	30V	1.5A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CUS10F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock6 304	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CUS08F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 800MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 220mV @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock329 892	30V	800mA	220mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CUS05S40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 10V Capacitance @ Vr, F: 42pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock378 882	40V	500mA	350mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 10V	42pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CUS05S30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 340mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 10V Capacitance @ Vr, F: 55pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock27 276	30V	500mA	340mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 10V	55pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS416,L3M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA FSC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 15pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC Operating Temperature - Junction: 125°C (Max)	paquet: 2-SMD, Flat Lead	Stock204 474	30V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	15pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	fSC	125°C (Max)
1SS405,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 50MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 20V Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	paquet: SC-79, SOD-523	Stock95 520	20V	50mA	550mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 20V	3.9pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
1SS193,LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SMINI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max)	paquet: TO-236-3, SC-59, SOT-23-3	Stock157 440	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)
TBAS16,LM	Toshiba Semiconductor and Storage	DIODE HS SW 80V 215MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -	paquet: SOT-23-3 Flat Leads	Stock25 032	80V	215mA	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	SOT-23-3 Flat Leads	SOT-23-3	-
TBAT54S,LM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 140MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 140mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-236-3, SC-59, SOT-23-3	Stock151 950	30V	140mA	580mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.5ns	2µA @ 25V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-55°C ~ 150°C
1SS367,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 100MA SC76 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 10V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: - Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock55 332	10V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	20µA @ 10V	40pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	-	125°C (Max)
1SS404,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 300MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 300mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 20V Capacitance @ Vr, F: 46pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock48 456	20V	300mA	450mV @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 20V	46pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS427,L3M	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SOD923 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C	paquet: SOD-923	Stock256 068	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.6ns	500nA @ 80V	0.3pF @ 0V, 1MHz	Surface Mount	SOD-923	SOD-923	-55°C ~ 150°C
1SS387CT,L3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA CST2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 150°C (Max)	paquet: SOD-882	Stock4 496	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.6ns	500nA @ 80V	0.5pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	150°C (Max)
CTS520,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 16pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max)	paquet: SOD-882	Stock187 992	30V	200mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	16pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	125°C (Max)
CMS05(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 5A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 30V Capacitance @ Vr, F: 330pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-128	Stock66 468	30V	5A	450mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 30V	330pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS04(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 5A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 370mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 30V Capacitance @ Vr, F: 330pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	paquet: SOD-128	Stock373 026	30V	5A	370mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 30V	330pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS01(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 370mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	paquet: SOD-128	Stock3 360	30V	3A	370mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 30V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS11(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 95pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-128	Stock180 000	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	95pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS06(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 370mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: 130pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	paquet: SOD-128	Stock11 208	30V	2A	370mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	130pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CRH01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 1A SFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-123F	Stock36 000	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS04(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 510mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 47pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-123F	Stock552 312	40V	1A	510mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	47pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CUS10S30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 230mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 135pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	paquet: SC-76, SOD-323	Stock272 994	30V	1A	230mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	135pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS387,L3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA ESC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	paquet: SC-79, SOD-523	Stock626 046	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)

CMS03(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-128

Stock315 390

30V

3A

450mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

CMS10(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-128

Stock22 584

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

50pF @ 10V, 1MHz

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

CRS09(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-123F

Stock149 784

30V

1.5A

460mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

90pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

CRS06(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C

paquet: SOD-123F

Stock3 276 000

20V

1A

360mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

60pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 125°C

CRS01(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 30V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C

paquet: SOD-123F

Stock1 194 996

30V

1A

360mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 30V

40pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 125°C

1SS307E,L3F

Toshiba Semiconductor and Storage

DIODE SW GP 80V 100MA ESC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10nA @ 80V
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)

paquet: SC-79, SOD-523

Stock80 424

80V

100mA

1.3V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

10nA @ 80V

6pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SC-79

150°C (Max)

CUS15S30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock22 830

30V

1.5A

400mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

200pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

CUS10F30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock6 304

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

170pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

CUS08F30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 800MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 220mV @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock329 892

30V

800mA

220mV @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

170pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

CUS05S40,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 500MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 10V
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock378 882

40V

500mA

350mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

30µA @ 10V

42pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

CUS05S30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 340mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 10V
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock27 276

30V

500mA

340mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 10V

55pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

1SS416,L3M

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA FSC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)

paquet: 2-SMD, Flat Lead

Stock204 474

30V

100mA

500mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

50µA @ 30V

15pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

fSC

125°C (Max)

1SS405,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 50MA ESC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 50mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 20V
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-79, SOD-523

Stock95 520

20V

50mA

550mV @ 50mA

Small Signal =< 200mA (Io), Any Speed

-

500nA @ 20V

3.9pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

ESC

125°C (Max)

1SS193,LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SMINI

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)

paquet: TO-236-3, SC-59, SOT-23-3

Stock157 440

80V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

3pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

125°C (Max)

TBAS16,LM

Toshiba Semiconductor and Storage

DIODE HS SW 80V 215MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -

paquet: SOT-23-3 Flat Leads

Stock25 032

80V

215mA

-

Standard Recovery >500ns, > 200mA (Io)

-

Surface Mount

SOT-23-3 Flat Leads

SOT-23-3

-

TBAT54S,LM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 140MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 140mA
Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-236-3, SC-59, SOT-23-3

Stock151 950

30V

140mA

580mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1.5ns

2µA @ 25V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-55°C ~ 150°C

1SS367,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA SC76

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 10V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: -
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock55 332

10V

100mA

500mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

20µA @ 10V

40pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

-

125°C (Max)

1SS404,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 300MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 300mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 20V
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock48 456

20V

300mA

450mV @ 300mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 20V

46pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

1SS427,L3M

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SOD923

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C

paquet: SOD-923

Stock256 068

80V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

1.6ns

500nA @ 80V

0.3pF @ 0V, 1MHz

Surface Mount

SOD-923

-55°C ~ 150°C

1SS387CT,L3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA CST2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)

paquet: SOD-882

Stock4 496

80V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

1.6ns

500nA @ 80V

0.5pF @ 0V, 1MHz

Surface Mount

SOD-882

CST2

150°C (Max)

CTS520,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA CST2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)

paquet: SOD-882

Stock187 992

30V

200mA

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 30V

16pF @ 0V, 1MHz

Surface Mount

SOD-882

CST2

125°C (Max)

CMS05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 30V
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-128

Stock66 468

30V

5A

450mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 30V

330pF @ 10V, 1MHz

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

CMS04(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 370mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8mA @ 30V
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

paquet: SOD-128

Stock373 026

30V

5A

370mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

8mA @ 30V

330pF @ 10V, 1MHz

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 125°C

CMS01(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 370mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

paquet: SOD-128

Stock3 360

30V

3A

370mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 30V

-

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 125°C

CMS11(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-128

Stock180 000

40V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

95pF @ 10V, 1MHz

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

CMS06(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 370mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: 130pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

paquet: SOD-128

Stock11 208

30V

2A

370mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

130pF @ 10V, 1MHz

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 125°C

CRH01(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A SFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-123F

Stock36 000

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

CRS04(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: 47pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-123F

Stock552 312

40V

1A

510mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

47pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

CUS10S30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 230mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-76, SOD-323

Stock272 994

30V

1A

230mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

135pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

1SS387,L3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA ESC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)

paquet: SC-79, SOD-523

Stock626 046

80V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

3pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

ESC

125°C (Max)