Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Matrices | Heisener Electronics
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Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Matrices

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FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SSM6N55NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN(2x2)
paquet: 6-WDFN Exposed Pad
Stock7 536
Logic Level Gate
30V
4A
46 mOhm @ 4A, 10V
2.5V @ 100µA
2.5nC @ 4.5V
280pF @ 15V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN(2x2)
SSM6N7002BFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock3 248
Logic Level Gate
60V
200mA
2.1 Ohm @ 500mA, 10V
3.1V @ 250µA
-
17pF @ 25V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P36FE,LM
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 330mA
  • Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock2 400
Logic Level Gate
20V
330mA
1.31 Ohm @ 100mA, 4.5V
1V @ 1mA
1.2nC @ 4V
43pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N36FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock4 064
Logic Level Gate
20V
500mA
630 mOhm @ 200mA, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6P35FE,LM
Toshiba Semiconductor and Storage

MOSFET 2NCH 20V 100MA ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock5 536
Standard
20V
100mA
8 Ohm @ 50mA, 4V
1V @ 1mA
-
12.2pF @ 3V
150mW
150°C
Surface Mount
SOT-563, SOT-666
ES6
SSM6N37FE,LM(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A 2-2N1D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock3 264
Logic Level Gate
20V
250mA
2.2 Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
SSM6L09FUTE85LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 0.4A/0.2A US6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock3 728
Logic Level Gate
30V
400mA, 200mA
700 mOhm @ 200MA, 10V
1.8V @ 100µA
-
20pF @ 5V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6L35FU(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A US6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock7 968
Logic Level Gate, 1.2V Drive
20V
180mA, 100mA
3 Ohm @ 50mA, 4V
1V @ 1mA
-
9.5pF @ 3V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 200mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock3 088
Standard
20V
100mA
3 Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
200mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.3A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 285mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock3 024
Standard
60V
300mA
1.5 Ohm @ 100mA, 10V
2.1V @ 250µA
0.6nC @ 4.5V
40pF @ 10V
285mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P41FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.72A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 720mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock7 456
Logic Level Gate
20V
720mA
300 mOhm @ 400mA, 4.5V
1V @ 1mA
1.76nC @ 4.5V
110pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N15AFE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock3 696
Logic Level Gate
30V
100mA
4 Ohm @ 10mA, 4V
1.5V @ 100µA
-
7.8pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6L16FETE85LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 0.1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock3 408
Standard
20V
100mA
3 Ohm @ 10mA, 4V
1.1V @ 0.1mA
-
9.3pF @ 3V
150mW
150°C (TA)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N15AFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A 2-2J1C

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock3 280
Logic Level Gate
30V
100mA
3.6 Ohm @ 10mA, 4V
1.5V @ 100µA
-
13.5pF @ 3V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
hot SSM6N7002BFE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock14 760 000
Logic Level Gate
60V
200mA
2.1 Ohm @ 500mA, 10V
3.1V @ 250µA
-
17pF @ 25V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
SSM6P35FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.1A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock32 976
Logic Level Gate
20V
100mA
8 Ohm @ 50mA, 4V
1V @ 1mA
-
12.2pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N61NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 4A UDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFNB (2x2)
paquet: 6-WDFN Exposed Pad
Stock22 290
Logic Level Gate, 1.5V Drive
20V
4A
33 mOhm @ 4A, 4.5V
1V @ 1mA
3.6nC @ 4.5V
410pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFNB (2x2)
SSM6L61NU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 4A UDFN6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
paquet: 6-WDFN Exposed Pad
Stock23 022
Standard
20V
4A
-
-
-
-
-
-
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SSM6N37FU,LF
Toshiba Semiconductor and Storage

MOSFET ARRAY 2N-CH 20V 250MA US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock25 446
Logic Level Gate, 1.5V Drive
20V
250mA (Ta)
2.2 Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
300mW
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N7002CFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.17A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Power - Max: 285mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock58 848
Standard
60V
170mA
3.9 Ohm @ 100mA, 10V
2.1V @ 250µA
0.35nC @ 4.5V
17pF @ 10V
285mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P47NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-2Y1A

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
paquet: 6-WDFN Exposed Pad
Stock26 646
Logic Level Gate
20V
4A
95 mOhm @ 1.5A, 4.5V
1V @ 1mA
4.6nC @ 4.5V
290pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SSM6P49NU,LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-1Y1A

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
paquet: 6-WDFN Exposed Pad
Stock46 176
Logic Level Gate
20V
4A
45 mOhm @ 3.5A, 10V
1.2V @ 1mA
6.74nC @ 4.5V
480pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
hot SSM6N57NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN(2x2)
paquet: 6-WDFN Exposed Pad
Stock13 344
Standard
30V
4A
46 mOhm @ 2A, 4.5V
1V @ 1mA
4nC @ 4.5V
310pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN(2x2)
SSM6L35FE,LM
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock77 388
Logic Level Gate
20V
180mA, 100mA
3 Ohm @ 50mA, 4V
1V @ 1mA
-
9.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6L36FE,LM
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A/0.33A ES6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock35 052
Logic Level Gate
20V
500mA, 330mA
630 mOhm @ 200mA, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N35FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.18A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock103 914
Logic Level Gate
20V
180mA
3 Ohm @ 50mA, 4V
1V @ 1mA
-
9.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
hot SSM6N58NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
paquet: 6-WDFN Exposed Pad
Stock180 000
Logic Level Gate, 1.8V Drive
30V
4A
84 mOhm @ 2A, 4.5V
1V @ 1mA
1.8nC @ 4.5V
129pF @ 15V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SSM6N56FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock34 896
Logic Level Gate, 1.5V Drive
20V
800mA
235 mOhm @ 800mA, 4.5V
1V @ 1mA
1nC @ 4.5V
55pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
SSM6N43FU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 200mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock27 318
Logic Level Gate, 1.5V Drive
20V
500mA
630 mOhm @ 200mA, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
200mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N44FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock95 874
Logic Level Gate
30V
100mA
4 Ohm @ 10mA, 4V
1.5V @ 100µA
-
8.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)