Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Simples | Heisener Electronics
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Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Simples

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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SSM3K341R,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 6A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock27 114
MOSFET (Metal Oxide)
60V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3nC @ 10V
550pF @ 10V
±20V
-
1.2W (Ta)
36 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J120TU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.3nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1484pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: 3-SMD, Flat Leads
Stock231 690
MOSFET (Metal Oxide)
20V
4A (Ta)
1.5V, 4V
1V @ 1mA
22.3nC @ 4V
1484pF @ 10V
±8V
-
500mW (Ta)
38 mOhm @ 3A, 4V
150°C (TJ)
Surface Mount
UFM
3-SMD, Flat Leads
SSM6J501NU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 10A UDFN6B

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
paquet: 6-WDFN Exposed Pad
Stock100 902
MOSFET (Metal Oxide)
20V
10A (Ta)
1.5V, 4.5V
1V @ 1mA
29.9nC @ 4.5V
2600pF @ 10V
±8V
-
1W (Ta)
15.3 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
SSM3K116TU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: 3-SMD, Flat Leads
Stock52 908
MOSFET (Metal Oxide)
30V
2.2A (Ta)
2.5V, 4.5V
1.1V @ 100µA
-
245pF @ 10V
±12V
-
500mW (Ta)
100 mOhm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
UFM
3-SMD, Flat Leads
SSM6J512NU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 10A UDFN6B

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 4A, 8V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
paquet: 6-WDFN Exposed Pad
Stock29 202
MOSFET (Metal Oxide)
12V
10A (Ta)
1.8V, 8V
1V @ 1mA
19.5nC @ 4.5V
1400pF @ 6V
±10V
-
1.25W (Ta)
16.2 mOhm @ 4A, 8V
150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
SSM3J133TU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5.5A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: 3-SMD, Flat Leads
Stock115 182
MOSFET (Metal Oxide)
20V
5.5A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8nC @ 4.5V
840pF @ 10V
±8V
-
500mW (Ta)
29.8 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
UFM
3-SMD, Flat Leads
SSM3K318R,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 2.5A TSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 107 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock50 856
MOSFET (Metal Oxide)
60V
2.5A (Ta)
4.5V, 10V
2.8V @ 1mA
7nC @ 10V
235pF @ 30V
±20V
-
1W (Ta)
107 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J56MFV,L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.8A VESM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 800mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
paquet: SOT-723
Stock281 394
MOSFET (Metal Oxide)
20V
800mA (Ta)
1.2V, 4.5V
-
-
100pF @ 10V
±8V
-
150mW (Ta)
390 mOhm @ 800mA, 4.5V
150°C (TJ)
Surface Mount
VESM
SOT-723
SSM3K335R,LF
Toshiba Semiconductor and Storage

MOSFET N CH 30V 6A SOT-23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock101 988
MOSFET (Metal Oxide)
30V
6A (Ta)
4.5V, 10V
2.5V @ 100µA
2.7nC @ 4.5V
340pF @ 15V
±20V
-
1W (Ta)
38 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3K333R,LF
Toshiba Semiconductor and Storage

MOSFET N CH 30V 6A 2-3Z1A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 436pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock127 020
MOSFET (Metal Oxide)
30V
6A (Ta)
4.5V, 10V
2.5V @ 100µA
3.4nC @ 4.5V
436pF @ 15V
±20V
-
1W (Ta)
28 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J334R,LF
Toshiba Semiconductor and Storage

MOSFET P CH 30V 4A SOT-23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock209 658
MOSFET (Metal Oxide)
30V
4A (Ta)
4V, 10V
2V @ 100µA
5.9nC @ 10V
280pF @ 15V
±20V
-
1W (Ta)
71 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J332R,LF
Toshiba Semiconductor and Storage

MOSFET P CH 30V 6A 2-3Z1A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock313 752
MOSFET (Metal Oxide)
30V
6A (Ta)
1.8V, 10V
1.2V @ 1mA
8.2nC @ 4.5V
560pF @ 15V
±12V
-
1W (Ta)
42 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3K339R,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A SOT-23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock334 788
MOSFET (Metal Oxide)
40V
2A (Ta)
1.8V, 8V
1.2V @ 1mA
1.1nC @ 4.2V
130pF @ 10V
±12V
-
1W (Ta)
185 mOhm @ 1A, 8V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3K324R,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT-23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock380 064
MOSFET (Metal Oxide)
30V
4A (Ta)
1.8V, 4.5V
-
-
190pF @ 30V
±12V
-
1W (Ta)
55 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
hot SSM3K56MFV,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.8A VESM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
paquet: SOT-723
Stock192 000
MOSFET (Metal Oxide)
20V
800mA (Ta)
1.5V, 4.5V
1V @ 1mA
1nC @ 4.5V
55pF @ 10V
±8V
-
150mW (Ta)
235 mOhm @ 800mA, 4.5V
150°C (TJ)
Surface Mount
VESM
SOT-723
SSM3J327R,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock366 084
MOSFET (Metal Oxide)
20V
3.9A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6nC @ 4.5V
290pF @ 10V
±8V
-
1W (Ta)
93 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3K16FU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.1A USM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
paquet: SC-70, SOT-323
Stock47 214
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.5V, 4V
1.1V @ 100µA
-
9.3pF @ 3V
±10V
-
150mW (Ta)
3 Ohm @ 10mA, 4V
-55°C ~ 150°C (TJ)
Surface Mount
USM
SC-70, SOT-323
hot SSM3J36FS,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.33A SSM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSM
  • Package / Case: SC-75, SOT-416
paquet: SC-75, SOT-416
Stock1 781 880
MOSFET (Metal Oxide)
20V
330mA (Ta)
1.5V, 4.5V
1V @ 1mA
1.2nC @ 4V
43pF @ 10V
±8V
-
150mW (Ta)
1.31 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
SSM
SC-75, SOT-416
hot SSM3K37MFV,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.25A VESM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
paquet: SOT-723
Stock342 000
MOSFET (Metal Oxide)
20V
250mA (Ta)
1.5V, 4.5V
1V @ 1mA
-
12pF @ 10V
±10V
-
150mW (Ta)
2.2 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
VESM
SOT-723
SSM3K35CTC,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.18A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3C
  • Package / Case: SC-101, SOT-883
paquet: SC-101, SOT-883
Stock77 466
MOSFET (Metal Oxide)
20V
250mA (Ta)
1.2V, 4.5V
1V @ 100µA
0.34nC @ 4.5V
36pF @ 10V
±10V
-
500mW (Ta)
1.1 Ohm @ 150mA, 4.5V
150°C (TJ)
Surface Mount
CST3C
SC-101, SOT-883
SSM3K37FS,LF
Toshiba Semiconductor and Storage

MOSFET NCH 20V 200MA SSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSM
  • Package / Case: SC-75, SOT-416
paquet: SC-75, SOT-416
Stock96 816
MOSFET (Metal Oxide)
20V
200mA (Ta)
1.5V, 4.5V
1V @ 1mA
-
12pF @ 10V
±10V
-
100mW (Ta)
2.2 Ohm @ 100mA, 4.5V
150°C (TA)
Surface Mount
SSM
SC-75, SOT-416
SSM3J15FV,L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 0.1A VESM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
paquet: SOT-723
Stock93 948
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.7V @ 100µA
-
9.1pF @ 3V
±20V
-
150mW (Ta)
12 Ohm @ 10mA, 4V
-55°C ~ 150°C (TJ)
Surface Mount
VESM
SOT-723
TK31V60X,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 9.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (8x8)
  • Package / Case: 4-VSFN Exposed Pad
paquet: 4-VSFN Exposed Pad
Stock19 080
MOSFET (Metal Oxide)
600V
30.8A (Ta)
10V
3.5V @ 1.5mA
65nC @ 10V
3000pF @ 300V
±30V
Super Junction
240W (Tc)
98 mOhm @ 9.4A, 10V
150°C (TJ)
Surface Mount
5-DFN (8x8)
4-VSFN Exposed Pad
TPW1R306PL,L1Q
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerWDFN
paquet: 8-PowerWDFN
Stock48 732
MOSFET (Metal Oxide)
60V
260A (Tc)
4.5V, 10V
-
-
-
±20V
-
960mW (Ta), 170W (Tc)
-
-
Surface Mount
8-DSOP Advance
8-PowerWDFN
TPN4R303NL,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 63A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
paquet: 8-PowerVDFN
Stock42 762
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
2.3V @ 200µA
14.8nC @ 10V
1400pF @ 15V
±20V
-
700mW (Ta), 34W (Tc)
4.3 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
8-TSON Advance (3.3x3.3)
8-PowerVDFN
SSM3K123TU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: 3-SMD, Flat Leads
Stock266 004
MOSFET (Metal Oxide)
20V
4.2A (Ta)
1.5V, 4V
1V @ 1mA
13.6nC @ 4V
1010pF @ 10V
±10V
-
500mW (Ta)
28 mOhm @ 3A, 4V
150°C (TJ)
Surface Mount
UFM
3-SMD, Flat Leads
hot SSM3K329R,LF
Toshiba Semiconductor and Storage

MOSFET N CH 30V 3.5A 2-3Z1A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 126 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock125 616
MOSFET (Metal Oxide)
30V
3.5A (Ta)
1.8V, 4V
1V @ 1mA
1.5nC @ 4V
123pF @ 15V
±12V
-
1W (Ta)
126 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
hot SSM3J328R,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock40 200
MOSFET (Metal Oxide)
20V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8nC @ 4.5V
840pF @ 10V
±8V
-
1W (Ta)
29.8 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J356R,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 2A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: SOT-23-3 Flat Leads
Stock141 906
MOSFET (Metal Oxide)
60V
2A (Ta)
4V, 10V
2V @ 1mA
8.3nC @ 10V
330pF @ 10V
+10V, -20V
-
1W (Ta)
300 mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3K36MFV,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA VESM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
paquet: SOT-723
Stock568 950
MOSFET (Metal Oxide)
20V
500mA (Ta)
1.5V, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
±10V
-
150mW (Ta)
630 mOhm @ 200mA, 5V
150°C (TJ)
Surface Mount
VESM
SOT-723