Page 113 - Diodes - Redresseurs - Simples | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CDBMT220-HF	Comchip Technology	DIODE SCHOTTKY 20V 2A SOD123H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 125°C	paquet: SOD-123H	Stock4 432	20V	2A (DC)	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	160pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 125°C
FGP20DHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-204AC, DO-15, Axial	Stock6 800	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	45pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
EGP50GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-201AA, DO-27, Axial	Stock3 184	400V	5A	1.25V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	75pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
CSD10060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 16.5A TO263 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 550pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16 272	600V	16.5A	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	550pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263-2	-55°C ~ 175°C
FDH700_T50R	Fairchild/ON Semiconductor	DIODE GEN PURP 20V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 900ps Current - Reverse Leakage @ Vr: 50nA @ 20V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-204AH, DO-35, Axial	Stock3 568	20V	150mA (DC)	1.25V @ 50mA	Small Signal =< 200mA (Io), Any Speed	900ps	50nA @ 20V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
MBR150RL	ON Semiconductor	DIODE SCHOTTKY 50V 1A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock69 840	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 150°C
129NQ135	Vishay Semiconductor Diodes Division	DIODE MODULE 135V 120A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 135V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 135V Capacitance @ Vr, F: 3000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	paquet: D-67 HALF-PAK	Stock5 392	135V	120A	1.07V @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 135V	3000pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-
FR803	Diodes Incorporated	DIODE GEN PURP 200V 8A TO220A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220a Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-220-2	Stock5 392	200V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 200V	-	Through Hole	TO-220-2	TO-220a	-65°C ~ 175°C
VS-SD1100C12L	Vishay Semiconductor Diodes Division	DIODE MODULE 1.2KV 1170A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1170A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: B-43, PUK Supplier Device Package: B-43, Hockey PUK Operating Temperature - Junction: -	paquet: B-43, PUK	Stock4 784	1200V	1170A	1.31V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 1200V	-	Stud Mount	B-43, PUK	B-43, Hockey PUK	-
A187PD	Powerex Inc.	DIODE GEN PURP 1.4KV 150A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.3µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 125°C	paquet: DO-205AA, DO-8, Stud	Stock3 552	1400V	150A	-	Standard Recovery >500ns, > 200mA (Io)	2.3µs	-	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 125°C
1N6626US	Microsemi Corporation	DIODE GEN PURP 220V 1.75A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 220V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock7 680	220V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 220V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
VS-40HF100M	Vishay Semiconductor Diodes Division	DIODE STD REC 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C	paquet: DO-203AB, DO-5, Stud	Stock4 048	1000V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 190°C
VS-72HF100	Vishay Semiconductor Diodes Division	DIODE STD REC ISO LEAD 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	paquet: DO-203AB, DO-5, Stud	Stock5 328	1000V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
BYW29-200HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-220-2	Stock2 640	200V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	45pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
UH4PBCHM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock5 920	100V	2A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	21pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
P600J-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 150°C	paquet: P600, Axial	Stock2 928	600V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 600V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-55°C ~ 150°C
SE40PB-M3/87A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2.4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.2µs Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock2 464	100V	2.4A (DC)	1.05V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	2.2µs	10µA @ 100V	28pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SE30AFDHM3/6A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1.4A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.4A (DC) Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-221AC, SMA Flat Leads	Stock7 296	200V	1.4A (DC)	910mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC	-55°C ~ 175°C
HS3B M6G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 100V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AB, SMC	Stock7 568	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
ES1JF R2G	TSC America Inc.	DIODE, SUPER FAST, 1A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-221AC, SMA Flat Leads	Stock7 744	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
DB3J201K0L	Panasonic Electronic Components	DIODE SCHOTTKY 20V 500MA SMINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.3ns Current - Reverse Leakage @ Vr: 10µA @ 10V Capacitance @ Vr, F: 12pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B Operating Temperature - Junction: 125°C (Max)	paquet: SC-85	Stock6 592	20V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	4.3ns	10µA @ 10V	12pF @ 10V, 1MHz	Surface Mount	SC-85	SMini3-F2-B	125°C (Max)
SS23LHRQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-219AB	Stock5 680	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CDBER40	Comchip Technology	DIODE SCHOTTKY 40V 200MA 0503 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0503 (1308 Metric) Supplier Device Package: 0503/SOD-723F Operating Temperature - Junction: 125°C (Max)	paquet: 0503 (1308 Metric)	Stock6 704	40V	200mA	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	5ns	200nA @ 30V	5pF @ 0V, 1MHz	Surface Mount	0503 (1308 Metric)	0503/SOD-723F	125°C (Max)
CDSFR101A	Comchip Technology	DIODE GEN PURP 80V 100MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 75V Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	paquet: 1005 (2512 Metric)	Stock3 840	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 75V	3pF @ 0.5V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
STTH1R02Q	STMicroelectronics	DIODE GEN PURP 200V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 3µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: 175°C (Max)	paquet: DO-204AC, DO-15, Axial	Stock2 128	200V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	3µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	175°C (Max)
MBR0530T3G	ON Semiconductor	DIODE SCHOTTKY 30V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 130µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	paquet: SOD-123	Stock3 520	30V	500mA	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	-	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
S300Y	GeneSiC Semiconductor	DIODE GEN PURP 1.6KV 300A DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -60°C ~ 180°C	paquet: DO-205AB, DO-9, Stud	Stock5 696	1600V	300A	1.2V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-9	-60°C ~ 180°C
EG01V1	Sanken	DIODE GEN PURP 400V 700MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	paquet: Axial	Stock3 504	400V	700mA	2V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
CMR1-02M TR13	Central Semiconductor Corp	DIODE GEN PURP 200V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-214AC, SMA	Stock5 520	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	8pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
ES2A	Fairchild/ON Semiconductor	DIODE GEN PURP 50V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-214AA, SMB	Stock1 465 620	50V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 50V	18pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C

CDBMT220-HF

Comchip Technology

DIODE SCHOTTKY 20V 2A SOD123H

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 125°C

paquet: SOD-123H

Stock4 432

20V

2A (DC)

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

160pF @ 4V, 1MHz

Surface Mount

SOD-123H

-55°C ~ 125°C

FGP20DHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-204AC, DO-15, Axial

Stock6 800

200V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 200V

45pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

EGP50GHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-201AA, DO-27, Axial

Stock3 184

400V

5A

1.25V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

75pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

CSD10060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 16.5A TO263

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16 272

600V

16.5A

1.8V @ 10A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

550pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263-2

-55°C ~ 175°C

FDH700_T50R

Fairchild/ON Semiconductor

DIODE GEN PURP 20V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 150mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 900ps
Current - Reverse Leakage @ Vr: 50nA @ 20V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-204AH, DO-35, Axial

Stock3 568

20V

150mA (DC)

1.25V @ 50mA

Small Signal =< 200mA (Io), Any Speed

900ps

50nA @ 20V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

MBR150RL

ON Semiconductor

DIODE SCHOTTKY 50V 1A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock69 840

50V

1A

750mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 150°C

129NQ135

Vishay Semiconductor Diodes Division

DIODE MODULE 135V 120A HALF-PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 135V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 1.07V @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 135V
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: D-67
Operating Temperature - Junction: -

paquet: D-67 HALF-PAK

Stock5 392

135V

120A

1.07V @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 135V

3000pF @ 5V, 1MHz

Chassis Mount

D-67 HALF-PAK

D-67

-

FR803

Diodes Incorporated

DIODE GEN PURP 200V 8A TO220A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220a
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-220-2

Stock5 392

200V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 200V

-

Through Hole

TO-220-2

TO-220a

-65°C ~ 175°C

VS-SD1100C12L

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 1170A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1170A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: B-43, PUK
Supplier Device Package: B-43, Hockey PUK
Operating Temperature - Junction: -

paquet: B-43, PUK

Stock4 784

1200V

1170A

1.31V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 1200V

-

Stud Mount

B-43, PUK

B-43, Hockey PUK

-

A187PD

Powerex Inc.

DIODE GEN PURP 1.4KV 150A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.3µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 125°C

paquet: DO-205AA, DO-8, Stud

Stock3 552

1400V

150A

-

Standard Recovery >500ns, > 200mA (Io)

2.3µs

-

Stud Mount

DO-205AA, DO-8, Stud

-

-40°C ~ 125°C

1N6626US

Microsemi Corporation

DIODE GEN PURP 220V 1.75A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 220V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock7 680

220V

1.75A

1.35V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 220V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

VS-40HF100M

Vishay Semiconductor Diodes Division

DIODE STD REC 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C

paquet: DO-203AB, DO-5, Stud

Stock4 048

1000V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 190°C

VS-72HF100

Vishay Semiconductor Diodes Division

DIODE STD REC ISO LEAD 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

paquet: DO-203AB, DO-5, Stud

Stock5 328

1000V

70A

1.35V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

BYW29-200HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-220-2

Stock2 640

200V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

45pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

UH4PBCHM3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock5 920

100V

2A

1.05V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 100V

21pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

P600J-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C

paquet: P600, Axial

Stock2 928

600V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 600V

150pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-55°C ~ 150°C

SE40PB-M3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.4A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2µs
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock2 464

100V

2.4A (DC)

1.05V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

2.2µs

10µA @ 100V

28pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SE30AFDHM3/6A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.4A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-221AC, SMA Flat Leads

Stock7 296

200V

1.4A (DC)

910mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 200V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC

-55°C ~ 175°C

HS3B M6G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 100V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AB, SMC

Stock7 568

100V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 100V

80pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

ES1JF R2G

TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-221AC, SMA Flat Leads

Stock7 744

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

9pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF

-55°C ~ 150°C

DB3J201K0L

Panasonic Electronic Components

DIODE SCHOTTKY 20V 500MA SMINI3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.3ns
Current - Reverse Leakage @ Vr: 10µA @ 10V
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B
Operating Temperature - Junction: 125°C (Max)

paquet: SC-85

Stock6 592

20V

500mA

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

4.3ns

10µA @ 10V

12pF @ 10V, 1MHz

Surface Mount

SC-85

SMini3-F2-B

125°C (Max)

SS23LHRQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-219AB

Stock5 680

30V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

CDBER40

Comchip Technology

DIODE SCHOTTKY 40V 200MA 0503

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0503 (1308 Metric)
Supplier Device Package: 0503/SOD-723F
Operating Temperature - Junction: 125°C (Max)

paquet: 0503 (1308 Metric)

Stock6 704

40V

200mA

1V @ 40mA

Small Signal =< 200mA (Io), Any Speed

5ns

200nA @ 30V

5pF @ 0V, 1MHz

Surface Mount

0503 (1308 Metric)

0503/SOD-723F

125°C (Max)

CDSFR101A

Comchip Technology

DIODE GEN PURP 80V 100MA 1005

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 75V
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

paquet: 1005 (2512 Metric)

Stock3 840

80V

100mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 75V

3pF @ 0.5V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

STTH1R02Q

STMicroelectronics

DIODE GEN PURP 200V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)

paquet: DO-204AC, DO-15, Axial

Stock2 128

200V

1.5A

1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

3µA @ 200V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

175°C (Max)

MBR0530T3G

ON Semiconductor

DIODE SCHOTTKY 30V 500MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 130µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

paquet: SOD-123

Stock3 520

30V

500mA

430mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

130µA @ 30V

-

Surface Mount

SOD-123

-65°C ~ 125°C

S300Y

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 300A DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C

paquet: DO-205AB, DO-9, Stud

Stock5 696

1600V

300A

1.2V @ 300A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1600V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-9

-60°C ~ 180°C

EG01V1

Sanken

DIODE GEN PURP 400V 700MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

paquet: Axial

Stock3 504

400V

700mA

2V @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

100ns

50µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

CMR1-02M TR13

Central Semiconductor Corp

DIODE GEN PURP 200V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-214AC, SMA

Stock5 520

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

8pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

ES2A

Fairchild/ON Semiconductor

DIODE GEN PURP 50V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-214AA, SMB

Stock1 465 620

50V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

10µA @ 50V

18pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C