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Diodes - Redresseurs - Simples

Dossiers 30 120
Page  299/1 004
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CD1005-B0130
Bourns Inc.

DIODE SCHOTTKY 100MA 30V 2512

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 440mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 30V
  • Capacitance @ Vr, F: 9pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005
  • Operating Temperature - Junction: -40°C ~ 125°C
paquet: 1005 (2512 Metric)
Stock6 480
30V
100mA
440mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
30µA @ 30V
9pF @ 10V, 1MHz
Surface Mount
1005 (2512 Metric)
1005
-40°C ~ 125°C
US1MHE3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock3 728
1000V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
MPG06MHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: MPG06, Axial
Stock3 344
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
600ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
GP20JHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-201AA, DO-27, Axial
Stock3 488
600V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
5µs
5µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
1N5621GPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 500nA @ 800V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-204AC, DO-15, Axial
Stock2 032
800V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
500nA @ 800V
25pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
hot MBR1640
Diodes Incorporated

DIODE SCHOTTKY 40V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: 450pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: TO-220-2
Stock17 688
40V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
450pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
hot FES16DTR
Fairchild/ON Semiconductor

DIODE GEN PURP 200V 16A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 170pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: TO-220-2
Stock7 056
200V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
170pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
VS-SD403C12S15C
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 430A D200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 430A
  • Voltage - Forward (Vf) (Max) @ If: 1.83V @ 1350A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 35mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, PUK
  • Operating Temperature - Junction: -
paquet: DO-200AA, A-PUK
Stock4 336
1200V
430A
1.83V @ 1350A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
35mA @ 1200V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, PUK
-
hot 1N5550
Semtech Corporation

D MET 3A STD 200V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Stock5 248
-
-
-
-
-
-
-
-
-
-
-
1N1199A
GeneSiC Semiconductor

DIODE GEN PURP 50V 12A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
paquet: DO-203AA, DO-4, Stud
Stock3 200
50V
12A
1.1V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
HSM580G/TR13
Microsemi Corporation

DIODE SCHOTTKY 80V 5A DO215AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-215AB, SMC Gull Wing
Stock2 576
80V
5A
800mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 80V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 175°C
SF2001GHC0G
TSC America Inc.

DIODE, SUPER FAST, 20A, 50V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-220-3
Stock6 464
50V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
AR4PKHM3_A/H
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.8A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock2 960
800V
1.8A
1.9V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 800V
55pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
RG 10
Sanken

DIODE GEN PURP 400V 1.2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 500µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: Axial
Stock7 744
400V
1.2A
1.8V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
500µA @ 400V
-
Through Hole
Axial
-
-40°C ~ 150°C
SE50PAD-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 32pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-221BC, SMA Flat Leads Exposed Pad
Stock3 248
200V
5A
1.16V @ 5A
Standard Recovery >500ns, > 200mA (Io)
2µs
10µA @ 200V
32pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
hot SB240-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO204AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 125°C
paquet: DO-204AC, DO-15, Axial
Stock880 680
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 125°C
hot SS3P3HM3/84A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-220AA
Stock144 000
30V
3A
580mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
130pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
SS2P6-M3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 60V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-220AA
Stock6 608
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
80pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
SS29L MHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-219AB
Stock7 328
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RB520CS3002LYL
Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA 2DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: DFN1006-2
  • Operating Temperature - Junction: 150°C (Max)
paquet: SOD-882
Stock2 320
30V
200mA
450mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 10V
-
Surface Mount
SOD-882
DFN1006-2
150°C (Max)
JAN1N1188
Microsemi Corporation

DIODE GEN PURP 400V 35A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-203AB, DO-5, Stud
Stock4 048
400V
35A
1.4V @ 110A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 400V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 175°C
hot BAT54WS-E3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 125°C (Max)
paquet: SC-76, SOD-323
Stock144 000
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C (Max)
RFV12TG6SGC9
Rohm Semiconductor

DIODE GEN PURP 600V 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 2.8V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: 150°C (Max)
paquet: TO-220-2
Stock19 872
600V
12A
2.8V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220ACFP
150°C (Max)
hot ER3GB-TP
Micro Commercial Co

DIODE GEN PURP 400V 3A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 150°C
paquet: DO-214AA, SMB
Stock36 000
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 150°C
ES1JAF
Fairchild/ON Semiconductor

DIODE SUPER FAST 600V 1A SMAF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 34ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AD, SMAF
  • Supplier Device Package: DO-214AD (SMAF)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AD, SMAF
Stock6 208
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
34ns
1µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
DO-214AD, SMAF
DO-214AD (SMAF)
-55°C ~ 150°C
CSA2D-E3/I
Vishay Semiconductor Diodes Division

DIODE GPP 2A 200V DO-214AC SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.1µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 11pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AC, SMA
Stock244 782
200V
1.6A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
2.1µs
5µA @ 200V
11pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
CDBF0245
Comchip Technology

DIODE SCHOTTKY 45V 200MA 1005

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 10V
  • Capacitance @ Vr, F: 9pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005/SOD-323F
  • Operating Temperature - Junction: 125°C (Max)
paquet: 1005 (2512 Metric)
Stock35 994
45V
200mA
550mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 10V
9pF @ 10V, 1MHz
Surface Mount
1005 (2512 Metric)
1005/SOD-323F
125°C (Max)
ISL9R3060P2
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock7 608
600V
30A
2.4V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
100µA @ 600V
-
Through Hole
TO-220-2
TO-220-2L
-55°C ~ 175°C
hot S10D-TP
Micro Commercial Co

DIODE GEN PURP 200V 10A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 190pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AB, SMC
Stock300 000
200V
10A
1.2V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
190pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot DSEI12-12A
IXYS

DIODE GEN PURP 1.2KV 11A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-220-2
Stock33 984
1200V
11A
2.6V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
250µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C