Page 37 - Transistors - Bipolaires (BJT) - RF | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 360T E6327	Infineon Technologies	TRANSISTOR RF NPN 6V SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 13.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	paquet: SC-75, SOT-416	Stock2 352	9V	14GHz	1dB @ 1.8GHz	13.5dB	210mW	60 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
MMBTH81_F080	Fairchild/ON Semiconductor	TRANSISTOR RF PNP SOT-23 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock3 328	-	-	-	-	-	-	-	-	-	-	-
NE85634-T1-RF-A	CEL	SAME AS 2SC3357 SAME AS 2SC3357 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 9dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	paquet: TO-243AA	Stock7 488	12V	6.5GHz	1.1dB @ 1GHz	9dB	1.2W	125 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SC5015-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	paquet: SC-82A, SOT-343	Stock140 484	6V	12GHz	1.5dB @ 2GHz	11dB	150mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
2SC3585-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	paquet: TO-236-3, SC-59, SOT-23-3	Stock41 316	10V	10GHz	1.8dB @ 2GHz	9dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
UMIL25	Microsemi Corporation	TRANS RF BIPO 70W 3A 55HV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 8.9db ~ 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	paquet: 55HV	Stock6 064	33V	225MHz ~ 400MHz	-	8.9db ~ 10dB	70W	10 @ 500mA, 5V	3A	200°C (TJ)	Chassis Mount	55HV	55HV
MAX2601ESA-T	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	paquet: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock2 416	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
2SC5374A-TL-E	ON Semiconductor	TRANS NPN BIPO 100MA 10V SMCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 5.2GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 10.5dB @ 1GHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SMCP	paquet: SC-75, SOT-416	Stock132 000	10V	5.2GHz	1.4dB @ 1GHz	10.5dB @ 1GHz	100mW	110 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	SMCP
MRF581AG	Microsemi Corporation	TRANS RF NPN 5GHZ 15V MACR0 X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Macro-X Supplier Device Package: Macro-X	paquet: Macro-X	Stock5 744	15V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	90 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Macro-X	Macro-X
HFA3128BZ96	Intersil	IC TRANSISTOR ARRAY PNP 16-SOIC Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	paquet: 16-SOIC (0.154", 3.90mm Width)	Stock4 576	15V	5.5GHz	3.5dB @ 1GHz	-	150mW	20 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
PN5179_D75Z	Fairchild/ON Semiconductor	TRANS RF NPN 12V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock2 864	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NE856M03-A	CEL	TRANSISTOR NPN 1GHZ MINIMOLD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2.5dB @ 1GHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: 3-SuperMiniMold (M03)	paquet: SOT-623F	Stock3 568	12V	4.5GHz	1.4dB ~ 2.5dB @ 1GHz	-	125mW	80 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-623F	3-SuperMiniMold (M03)
SD1433	STMicroelectronics	TRANSISTOR NPN RF UHF 4LEAD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 58W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M122 Supplier Device Package: M122	paquet: M122	Stock4 496	16V	-	-	7dB	58W	10 @ 1A, 5V	2.5A	200°C (TJ)	Chassis, Stud Mount	M122	M122
NE461M02-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 8.3dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	paquet: TO-243AA	Stock6 448	15V	-	1.5dB ~ 2dB @ 500MHz ~ 1GHz	8.3dB	2W	60 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
NE68130-T1-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	paquet: SC-70, SOT-323	Stock2 976	10V	7GHz	1.4dB @ 1GHz	9dB	150mW	40 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFG10/X,215	NXP	TRANS RF NPN 2GHZ 8V SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	paquet: TO-253-4, TO-253AA	Stock2 064	8V	1.9GHz	-	7dB	400mW	25 @ 50mA, 5V	250mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
0910-150M	Microsemi Corporation	TRAN RF BIPO 400W 1000MHZ 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 890MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 8.1dB ~ 8.5dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	paquet: 55KT	Stock2 592	65V	890MHz ~ 1GHz	-	8.1dB ~ 8.5dB	400W	-	12A	200°C (TJ)	Chassis Mount	55KT	55KT
1214-220M	Microsemi Corporation	TRANS RF BIPO 700W 20A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 700W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	paquet: 55ST	Stock6 864	70V	1.2GHz ~ 1.4GHz	-	7.4dB	700W	10 @ 1A, 5V	20A	200°C (TJ)	Chassis Mount	55ST	55ST
MS3022	Microsemi Corporation	TRANS RF BIPO 7W 200MA M210 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1GHz ~ 2GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M210 Supplier Device Package: M210	paquet: M210	Stock2 288	45V	1GHz ~ 2GHz	-	7dB	7W	15 @ 100mA, 5V	200mA	200°C (TJ)	Chassis Mount	M210	M210
SD1526-01	Microsemi Corporation	TRANS RF BIPO 21.9W 1A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 21.9W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	paquet: M115	Stock2 352	45V	960MHz ~ 1.215GHz	-	9.5dB	21.9W	-	1A	200°C (TJ)	Chassis Mount	M115	M115
MS652S	Microsemi Corporation	TRANS RF BIPO 25W 2A M123 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M123 Supplier Device Package: M123	paquet: M123	Stock3 584	16V	450MHz ~ 512MHz	-	10dB	25W	10 @ 200mA, 5V	2A	200°C (TJ)	Chassis Mount	M123	M123
AT-32033-TR1G	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 11dB ~ 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	paquet: TO-236-3, SC-59, SOT-23-3	Stock2 128 416	5.5V	-	1dB ~ 1.3dB @ 900MHz	11dB ~ 12.5dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFU520AVL	NXP	TRANS RF NPN 12V 30MA SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 12.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	paquet: TO-236-3, SC-59, SOT-23-3	Stock3 216	12V	10GHz	1dB @ 1.8GHz	12.5dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
SD1274-01	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: - Mounting Type: Surface Mount Package / Case: M113 Supplier Device Package: M113	paquet: M113	Stock6 704	16V	-	-	10dB	70W	20 @ 250mA, 5V	8A	-	Surface Mount	M113	M113
MRF10005	M/A-Com Technology Solutions	TRANS 5W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10.3dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 1.25mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 336E-02 Supplier Device Package: 336E-02, Style 1	paquet: 336E-02	Stock6 024	55V	-	-	8.5dB ~ 10.3dB	25W	20 @ 500mA, 5V	1.25mA	200°C (TJ)	Chassis Mount	336E-02	336E-02, Style 1
2SC5087YTE85LF	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	paquet: SC-61AA	Stock6 112	12V	7GHz	1.1dB @ 1GHz	13dB	150mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-61AA	SMQ
CM5160	Central Semiconductor Corp	TRANS PNP 60V 0.4A TO39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	paquet: TO-205AD, TO-39-3 Metal Can	Stock7 552	40V	500MHz	-	-	1W	10 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BFR 193 E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	paquet: TO-236-3, SC-59, SOT-23-3	Stock95 058	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	10dB ~ 15dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFR 183 E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 17.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	paquet: TO-236-3, SC-59, SOT-23-3	Stock24 168	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	17.5dB	450mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFP650FH6327XTSA1	Infineon Technologies	TRANS RF NPN 42GHZ 4.5V 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 11dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	paquet: 4-SMD, Flat Leads	Stock53 592	4.5V	42GHz	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	11dB ~ 21.5dB	500mW	110 @ 80mA, 3V	150mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP

BFR 360T E6327

Infineon Technologies

TRANSISTOR RF NPN 6V SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 13.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

paquet: SC-75, SOT-416

Stock2 352

9V

14GHz

1dB @ 1.8GHz

13.5dB

210mW

60 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

MMBTH81_F080

Fairchild/ON Semiconductor

TRANSISTOR RF PNP SOT-23

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock3 328

-

NE85634-T1-RF-A

CEL

SAME AS 2SC3357 SAME AS 2SC3357

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 9dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

paquet: TO-243AA

Stock7 488

12V

6.5GHz

1.1dB @ 1GHz

9dB

1.2W

125 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SC5015-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

paquet: SC-82A, SOT-343

Stock140 484

6V

12GHz

1.5dB @ 2GHz

11dB

150mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

2SC3585-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

paquet: TO-236-3, SC-59, SOT-23-3

Stock41 316

10V

10GHz

1.8dB @ 2GHz

9dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

UMIL25

Microsemi Corporation

TRANS RF BIPO 70W 3A 55HV2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 8.9db ~ 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55HV
Supplier Device Package: 55HV

paquet: 55HV

Stock6 064

33V

225MHz ~ 400MHz

-

8.9db ~ 10dB

70W

10 @ 500mA, 5V

3A

200°C (TJ)

Chassis Mount

55HV

MAX2601ESA-T

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

paquet: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock2 416

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

2SC5374A-TL-E

ON Semiconductor

TRANS NPN BIPO 100MA 10V SMCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 5.2GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 10.5dB @ 1GHz
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SMCP

paquet: SC-75, SOT-416

Stock132 000

10V

5.2GHz

1.4dB @ 1GHz

10.5dB @ 1GHz

100mW

110 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

SMCP

MRF581AG

Microsemi Corporation

TRANS RF NPN 5GHZ 15V MACR0 X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Macro-X
Supplier Device Package: Macro-X

paquet: Macro-X

Stock5 744

15V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

90 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Macro-X

HFA3128BZ96

Intersil

IC TRANSISTOR ARRAY PNP 16-SOIC

Transistor Type: 5 PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

paquet: 16-SOIC (0.154", 3.90mm Width)

Stock4 576

15V

5.5GHz

3.5dB @ 1GHz

-

150mW

20 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

PN5179_D75Z

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock2 864

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NE856M03-A

CEL

TRANSISTOR NPN 1GHZ MINIMOLD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.5dB @ 1GHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: 3-SuperMiniMold (M03)

paquet: SOT-623F

Stock3 568

12V

4.5GHz

1.4dB ~ 2.5dB @ 1GHz

-

125mW

80 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-623F

3-SuperMiniMold (M03)

SD1433

STMicroelectronics

TRANSISTOR NPN RF UHF 4LEAD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 58W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M122
Supplier Device Package: M122

paquet: M122

Stock4 496

16V

-

7dB

58W

10 @ 1A, 5V

2.5A

200°C (TJ)

Chassis, Stud Mount

M122

NE461M02-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 8.3dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

paquet: TO-243AA

Stock6 448

15V

-

1.5dB ~ 2dB @ 500MHz ~ 1GHz

8.3dB

2W

60 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

NE68130-T1-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

paquet: SC-70, SOT-323

Stock2 976

10V

7GHz

1.4dB @ 1GHz

9dB

150mW

40 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFG10/X,215

NXP

TRANS RF NPN 2GHZ 8V SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

paquet: TO-253-4, TO-253AA

Stock2 064

8V

1.9GHz

-

7dB

400mW

25 @ 50mA, 5V

250mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

0910-150M

Microsemi Corporation

TRAN RF BIPO 400W 1000MHZ 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 890MHz ~ 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8.1dB ~ 8.5dB
Power - Max: 400W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

paquet: 55KT

Stock2 592

65V

890MHz ~ 1GHz

-

8.1dB ~ 8.5dB

400W

-

12A

200°C (TJ)

Chassis Mount

55KT

1214-220M

Microsemi Corporation

TRANS RF BIPO 700W 20A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 700W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

paquet: 55ST

Stock6 864

70V

1.2GHz ~ 1.4GHz

-

7.4dB

700W

10 @ 1A, 5V

20A

200°C (TJ)

Chassis Mount

55ST

MS3022

Microsemi Corporation

TRANS RF BIPO 7W 200MA M210

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1GHz ~ 2GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M210
Supplier Device Package: M210

paquet: M210

Stock2 288

45V

1GHz ~ 2GHz

-

7dB

7W

15 @ 100mA, 5V

200mA

200°C (TJ)

Chassis Mount

M210

SD1526-01

Microsemi Corporation

TRANS RF BIPO 21.9W 1A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 21.9W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

paquet: M115

Stock2 352

45V

960MHz ~ 1.215GHz

-

9.5dB

21.9W

-

1A

200°C (TJ)

Chassis Mount

M115

MS652S

Microsemi Corporation

TRANS RF BIPO 25W 2A M123

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 450MHz ~ 512MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M123
Supplier Device Package: M123

paquet: M123

Stock3 584

16V

450MHz ~ 512MHz

-

10dB

25W

10 @ 200mA, 5V

2A

200°C (TJ)

Chassis Mount

M123

AT-32033-TR1G

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 11dB ~ 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

paquet: TO-236-3, SC-59, SOT-23-3

Stock2 128 416

5.5V

-

1dB ~ 1.3dB @ 900MHz

11dB ~ 12.5dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFU520AVL

NXP

TRANS RF NPN 12V 30MA SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 12.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

paquet: TO-236-3, SC-59, SOT-23-3

Stock3 216

12V

10GHz

1dB @ 1.8GHz

12.5dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

SD1274-01

STMicroelectronics

TRANS NPN RF MICROWAVE VHF M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: M113
Supplier Device Package: M113

paquet: M113

Stock6 704

16V

-

10dB

70W

20 @ 250mA, 5V

8A

-

Surface Mount

M113

MRF10005

M/A-Com Technology Solutions

TRANS 5W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 10.3dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 1.25mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 336E-02
Supplier Device Package: 336E-02, Style 1

paquet: 336E-02

Stock6 024

55V

-

8.5dB ~ 10.3dB

25W

20 @ 500mA, 5V

1.25mA

200°C (TJ)

Chassis Mount

336E-02

336E-02, Style 1

2SC5087YTE85LF

Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

paquet: SC-61AA

Stock6 112

12V

7GHz

1.1dB @ 1GHz

13dB

150mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-61AA

SMQ

CM5160

Central Semiconductor Corp

TRANS PNP 60V 0.4A TO39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

paquet: TO-205AD, TO-39-3 Metal Can

Stock7 552

40V

500MHz

-

1W

10 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BFR 193 E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10dB ~ 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

paquet: TO-236-3, SC-59, SOT-23-3

Stock95 058

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

10dB ~ 15dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFR 183 E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 17.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

paquet: TO-236-3, SC-59, SOT-23-3

Stock24 168

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

17.5dB

450mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFP650FH6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.5V 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

paquet: 4-SMD, Flat Leads

Stock53 592

4.5V

42GHz

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

11dB ~ 21.5dB

500mW

110 @ 80mA, 3V

150mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP