Page 43 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7350TRPBF	Infineon Technologies	MOSFET N/P-CH 100V 2.1A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock263 940	Standard	100V	2.1A, 1.5A	210 mOhm @ 2.1A, 10V	4V @ 250µA	28nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BTS7904BATMA1	Infineon Technologies	MOSFET N/P-CH 55V/30V 40A TO263 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V, 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Power - Max: 69W, 96W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: PG-TO263-5	paquet: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	Stock3 472	Logic Level Gate	55V, 30V	40A	11.7 mOhm @ 20A, 10V	2.2V @ 40µA	121nC @ 10V	6100pF @ 25V	69W, 96W	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	PG-TO263-5
IRF7754	Infineon Technologies	MOSFET 2P-CH 12V 5.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock4 720	Logic Level Gate	12V	5.5A	25 mOhm @ 5.4A, 4.5V	900mV @ 250µA	22nC @ 4.5V	1984pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AO8801AL	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 4.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock5 152	Logic Level Gate	20V	4.5A	42 mOhm @ 4.5A, 4.5V	900mV @ 250µA	11nC @ 4.5V	905pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AO4842L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 7.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock60 576	Logic Level Gate	30V	-	22 mOhm @ 7.5A, 10V	2.6V @ 250µA	11nC @ 10V	448pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6966DQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 4A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock15 504	Logic Level Gate	20V	4A	30 mOhm @ 4.5A, 4.5V	1.4V @ 250µA	20nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4226DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V Power - Max: 3.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock960 504	Standard	25V	8A	19.5 mOhm @ 7A, 4.5V	2V @ 250µA	36nC @ 10V	1255pF @ 15V	3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4910DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 7.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock2 224	Standard	40V	7.6A	27 mOhm @ 6A, 10V	2V @ 250µA	32nC @ 10V	855pF @ 20V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIB911DK-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 2.6A SC75-6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	paquet: PowerPAK? SC-75-6L Dual	Stock1 984 140	Standard	20V	2.6A	295 mOhm @ 1.5A, 4.5V	1V @ 250µA	4nC @ 8V	115pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Dual	PowerPAK? SC-75-6L Dual
FDG6303N_D87Z	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	paquet: 6-TSSOP, SC-88, SOT-363	Stock5 408	Logic Level Gate	25V	500mA	450 mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
NTHD5905T1	ON Semiconductor	MOSFET 2P-CH 8V 3A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	paquet: 8-SMD, Flat Lead	Stock33 720	Logic Level Gate	8V	3A	90 mOhm @ 3A, 4.5V	450mV @ 250µA	9nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
STS4DNF30L	STMicroelectronics	MOSFET 2N-CH 30V 4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock406 656	Logic Level Gate	30V	4A	50 mOhm @ 2A, 10V	1V @ 250µA	9nC @ 10V	330pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRFHM792TRPBF	Infineon Technologies	MOSFET 2N-CH 100V 2.3A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	paquet: 8-PowerVDFN	Stock167 280	Standard	100V	2.3A	195 mOhm @ 2.9A, 10V	4V @ 10µA	6.3nC @ 10V	251pF @ 25V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-PQFN (3.3x3.3), Power33
APTM50DUM17G	Microsemi Corporation	MOSFET 2N-CH 500V 180A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	paquet: SP6	Stock6 032	Standard	500V	180A	20 mOhm @ 90A, 10V	5V @ 10mA	560nC @ 10V	28000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50AM19FG	Microsemi Corporation	MOSFET 2N-CH 500V 163A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 163A Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	paquet: SP6	Stock6 416	Standard	500V	163A	22.5 mOhm @ 81.5A, 10V	5V @ 10mA	492nC @ 10V	22400pF @ 25V	1136W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
ALD110908PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	paquet: 8-DIP (0.300", 7.62mm)	Stock5 744	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	820mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SI6975DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 5mA (Min) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock2 432	Logic Level Gate	12V	4.3A	27 mOhm @ 5.1A, 4.5V	450mV @ 5mA (Min)	30nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NVLJD4007NZTBG	ON Semiconductor	MOSFET 2N-CH 30V 0.245A WDFN6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 245mA Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 755mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	paquet: 6-WDFN Exposed Pad	Stock4 640	Logic Level Gate	30V	245mA	7 Ohm @ 125mA, 4.5V	1.5V @ 100µA	0.75nC @ 4.5V	20pF @ 5V	755mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
DMC2450UV-13	Diodes Incorporated	MOSFET N/P-CH 20V SOT563 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: SOT-563, SOT-666	Stock6 128	Standard	20V	1.03A, 700mA	480 mOhm @ 200mA, 5V	900mV @ 250µA	0.5nC @ 4.5V	37.1pF @ 10V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI4804CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock310 476	Standard	30V	8A	22 mOhm @ 7.5A, 10V	2.4V @ 250µA	23nC @ 10V	865pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTZD3152PT1G	ON Semiconductor	MOSFET 2P-CH 20V 0.43A SOT-563 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: SOT-563, SOT-666	Stock225 240	Standard	20V	430mA	900 mOhm @ 430mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	175pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
BSO303P H	Infineon Technologies	MOSFET 2P-CH 30V 7A 8DSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock144 060	Logic Level Gate	30V	7A	21 mOhm @ 8.2A, 10V	2V @ 100µA	49nC @ 10V	2678pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSZ15DC02KDHXTMA1	Infineon Technologies	MOSFET N/P-CH 20V 8TDSON FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8-FL	paquet: 8-PowerTDFN	Stock2 048	Logic Level Gate, 2.5V Drive	20V	5.1A, 3.2A	55 mOhm @ 5.1A, 4.5V	1.4V @ 110µA	2.8nC @ 4.5V	419pF @ 10V	2.5W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PG-TSDSON-8-FL
SI4948BEY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 60V 2.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock61 188	Logic Level Gate	60V	2.4A	120 mOhm @ 3.1A, 10V	3V @ 250µA	22nC @ 10V	-	1.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EPC2110ENGRT	EPC	TRANS GAN 2N-CH 120V BUMPED DIE FET Type: 2 N-Channel (Dual) Common Source FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	paquet: Die	Stock221 688	GaNFET (Gallium Nitride)	120V	3.4A	60 mOhm @ 4A, 5V	2.5V @ 700µA	0.8nC @ 5V	80pF @ 60V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
ALD110814SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	paquet: 16-SOIC (0.154", 3.90mm Width)	Stock6 168	Standard	10.6V	12mA, 3mA	500 Ohm @ 5.4V	1.42V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SI7922DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	paquet: PowerPAK? 1212-8 Dual	Stock406 368	Logic Level Gate	100V	1.8A	195 mOhm @ 2.5A, 10V	3.5V @ 250µA	8nC @ 10V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
AO7801	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 520 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	paquet: 6-TSSOP, SC-88, SOT-363	Stock148 008	Logic Level Gate	20V	-	520 mOhm @ 600mA, 4.5V	900mV @ 250µA	1.8nC @ 4.5V	140pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SIZ918DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 28A Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Power - Max: 29W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	paquet: 6-PowerPair?	Stock24 456	Logic Level Gate	30V	16A, 28A	12 mOhm @ 13.8A, 10V	2.2V @ 250µA	21nC @ 10V	790pF @ 15V	29W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
CAS120M12BM2	Cree/Wolfspeed	MOSFET 2N-CH 1200V 193A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 193A Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	paquet: Module	Stock6 016	Standard	1200V (1.2kV)	193A	16 mOhm @ 120A, 20V	2.6V @ 6mA (Typ)	378nC @ 20V	6300pF @ 1000V	925W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module

IRF7350TRPBF

Infineon Technologies

MOSFET N/P-CH 100V 2.1A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock263 940

Standard

100V

2.1A, 1.5A

210 mOhm @ 2.1A, 10V

4V @ 250µA

28nC @ 10V

380pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BTS7904BATMA1

Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO263

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V, 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
Power - Max: 69W, 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Supplier Device Package: PG-TO263-5

paquet: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

Stock3 472

Logic Level Gate

55V, 30V

40A

11.7 mOhm @ 20A, 10V

2.2V @ 40µA

121nC @ 10V

6100pF @ 25V

69W, 96W

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

PG-TO263-5

IRF7754

Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock4 720

Logic Level Gate

12V

5.5A

25 mOhm @ 5.4A, 4.5V

900mV @ 250µA

22nC @ 4.5V

1984pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AO8801AL

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 4.5A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock5 152

Logic Level Gate

20V

4.5A

42 mOhm @ 4.5A, 4.5V

900mV @ 250µA

11nC @ 4.5V

905pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AO4842L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock60 576

Logic Level Gate

30V

-

22 mOhm @ 7.5A, 10V

2.6V @ 250µA

11nC @ 10V

448pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6966DQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 4A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock15 504

Logic Level Gate

20V

4A

30 mOhm @ 4.5A, 4.5V

1.4V @ 250µA

20nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4226DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 25V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock960 504

Standard

25V

8A

19.5 mOhm @ 7A, 4.5V

2V @ 250µA

36nC @ 10V

1255pF @ 15V

3.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4910DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 7.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock2 224

Standard

40V

7.6A

27 mOhm @ 6A, 10V

2V @ 250µA

32nC @ 10V

855pF @ 20V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIB911DK-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 2.6A SC75-6

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-75-6L Dual
Supplier Device Package: PowerPAK? SC-75-6L Dual

paquet: PowerPAK? SC-75-6L Dual

Stock1 984 140

Standard

20V

2.6A

295 mOhm @ 1.5A, 4.5V

1V @ 250µA

4nC @ 8V

115pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Dual

FDG6303N_D87Z

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

paquet: 6-TSSOP, SC-88, SOT-363

Stock5 408

Logic Level Gate

25V

500mA

450 mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V

50pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

NTHD5905T1

ON Semiconductor

MOSFET 2P-CH 8V 3A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

paquet: 8-SMD, Flat Lead

Stock33 720

Logic Level Gate

8V

3A

90 mOhm @ 3A, 4.5V

450mV @ 250µA

9nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

STS4DNF30L

STMicroelectronics

MOSFET 2N-CH 30V 4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock406 656

Logic Level Gate

30V

4A

50 mOhm @ 2A, 10V

1V @ 250µA

9nC @ 10V

330pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRFHM792TRPBF

Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33

paquet: 8-PowerVDFN

Stock167 280

Standard

100V

2.3A

195 mOhm @ 2.9A, 10V

4V @ 10µA

6.3nC @ 10V

251pF @ 25V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-PQFN (3.3x3.3), Power33

APTM50DUM17G

Microsemi Corporation

MOSFET 2N-CH 500V 180A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

paquet: SP6

Stock6 032

Standard

500V

180A

20 mOhm @ 90A, 10V

5V @ 10mA

560nC @ 10V

28000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50AM19FG

Microsemi Corporation

MOSFET 2N-CH 500V 163A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 163A
Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
Power - Max: 1136W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

paquet: SP6

Stock6 416

Standard

500V

163A

22.5 mOhm @ 81.5A, 10V

5V @ 10mA

492nC @ 10V

22400pF @ 25V

1136W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

ALD110908PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

paquet: 8-DIP (0.300", 7.62mm)

Stock5 744

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.8V

820mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

SI6975DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.3A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock2 432

Logic Level Gate

12V

4.3A

27 mOhm @ 5.1A, 4.5V

450mV @ 5mA (Min)

30nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NVLJD4007NZTBG

ON Semiconductor

MOSFET 2N-CH 30V 0.245A WDFN6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 245mA
Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Power - Max: 755mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

paquet: 6-WDFN Exposed Pad

Stock4 640

Logic Level Gate

30V

245mA

7 Ohm @ 125mA, 4.5V

1.5V @ 100µA

0.75nC @ 4.5V

20pF @ 5V

755mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

DMC2450UV-13

Diodes Incorporated

MOSFET N/P-CH 20V SOT563

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

paquet: SOT-563, SOT-666

Stock6 128

Standard

20V

1.03A, 700mA

480 mOhm @ 200mA, 5V

900mV @ 250µA

0.5nC @ 4.5V

37.1pF @ 10V

450mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SI4804CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock310 476

Standard

30V

8A

22 mOhm @ 7.5A, 10V

2.4V @ 250µA

23nC @ 10V

865pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTZD3152PT1G

ON Semiconductor

MOSFET 2P-CH 20V 0.43A SOT-563

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

paquet: SOT-563, SOT-666

Stock225 240

Standard

20V

430mA

900 mOhm @ 430mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

175pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

BSO303P H

Infineon Technologies

MOSFET 2P-CH 30V 7A 8DSO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock144 060

Logic Level Gate

30V

7A

21 mOhm @ 8.2A, 10V

2V @ 100µA

49nC @ 10V

2678pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

BSZ15DC02KDHXTMA1

Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL

paquet: 8-PowerTDFN

Stock2 048

Logic Level Gate, 2.5V Drive

20V

5.1A, 3.2A

55 mOhm @ 5.1A, 4.5V

1.4V @ 110µA

2.8nC @ 4.5V

419pF @ 10V

2.5W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PG-TSDSON-8-FL

SI4948BEY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock61 188

Logic Level Gate

60V

2.4A

120 mOhm @ 3.1A, 10V

3V @ 250µA

22nC @ 10V

-

1.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

EPC2110ENGRT

EPC

TRANS GAN 2N-CH 120V BUMPED DIE

FET Type: 2 N-Channel (Dual) Common Source
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

paquet: Die

Stock221 688

GaNFET (Gallium Nitride)

120V

3.4A

60 mOhm @ 4A, 5V

2.5V @ 700µA

0.8nC @ 5V

80pF @ 60V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

ALD110814SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

paquet: 16-SOIC (0.154", 3.90mm Width)

Stock6 168

Standard

10.6V

12mA, 3mA

500 Ohm @ 5.4V

1.42V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SI7922DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 100V 1.8A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

paquet: PowerPAK? 1212-8 Dual

Stock406 368

Logic Level Gate

100V

1.8A

195 mOhm @ 2.5A, 10V

3.5V @ 250µA

8nC @ 10V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

AO7801

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 520 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

paquet: 6-TSSOP, SC-88, SOT-363

Stock148 008

Logic Level Gate

20V

-

520 mOhm @ 600mA, 4.5V

900mV @ 250µA

1.8nC @ 4.5V

140pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SIZ918DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Power - Max: 29W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

paquet: 6-PowerPair?

Stock24 456

Logic Level Gate

30V

16A, 28A

12 mOhm @ 13.8A, 10V

2.2V @ 250µA

21nC @ 10V

790pF @ 15V

29W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

CAS120M12BM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 193A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V
Power - Max: 925W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

paquet: Module

Stock6 016

Standard

1200V (1.2kV)

193A

16 mOhm @ 120A, 20V

2.6V @ 6mA (Typ)

378nC @ 20V

6300pF @ 1000V

925W

-40°C ~ 150°C (TJ)

Chassis Mount

Module