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Transistors - FET, MOSFET - Matrices

Dossiers 3 259
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7901D1TR
Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock63 732
Logic Level Gate
30V
6.2A
38 mOhm @ 5A, 4.5V
1V @ 250µA
10.5nC @ 5V
780pF @ 16V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO4818BL_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock3 584
Logic Level Gate
30V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot PMGD175XN,115
NXP

MOSFET 2N-CH 30V 0.9A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 900mA
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
  • Power - Max: 390mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
paquet: 6-TSSOP, SC-88, SOT-363
Stock43 800
Logic Level Gate
30V
900mA
225 mOhm @ 1A, 4.5V
1.5V @ 250µA
1.1nC @ 4.5V
75pF @ 15V
390mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
MP6M11TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A MPT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: MPT6
paquet: 6-SMD, Flat Leads
Stock5 872
Logic Level Gate
30V
3.5A
98 mOhm @ 3.5A, 10V
2.5V @ 1mA
1.9nC @ 5V
85pF @ 10V
2W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
MPT6
hot SI3905DV-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
paquet: SOT-23-6 Thin, TSOT-23-6
Stock156 012
Logic Level Gate
8V
-
125 mOhm @ 2.5A, 4.5V
450mV @ 250µA (Min)
6nC @ 4.5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
GWM220-004P3-SMD
IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
paquet: 17-SMD, Gull Wing
Stock4 208
Standard
40V
180A
-
4V @ 1mA
94nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
APTM50DUM25TG
Microsemi Corporation

MOSFET 2N-CH 500V 149A LP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 149A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
paquet: SP4
Stock3 648
Standard
500V
149A
25 mOhm @ 74.5A, 10V
4V @ 8mA
1200nC @ 10V
29600pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM50AM25FTG
Microsemi Corporation

MOSFET 2N-CH 500V 149A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 149A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
paquet: SP4
Stock7 280
Standard
500V
149A
25 mOhm @ 74.5A, 10V
4V @ 8mA
1200nC @ 10V
29600pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
NTHD4102PT3G
ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
paquet: 8-SMD, Flat Lead
Stock4 752
Logic Level Gate
20V
2.9A
80 mOhm @ 2.9A, 4.5V
1.5V @ 250µA
8.6nC @ 4.5V
750pF @ 16V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
SIB911DK-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 2.6A SC75-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-75-6L Dual
  • Supplier Device Package: PowerPAK? SC-75-6L Dual
paquet: PowerPAK? SC-75-6L Dual
Stock6 336
Standard
20V
2.6A
295 mOhm @ 1.5A, 4.5V
1V @ 250µA
4nC @ 8V
115pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Dual
PowerPAK? SC-75-6L Dual
hot SI4340DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 7.3A 14SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A, 9.9A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.14W, 1.43W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
paquet: 14-SOIC (0.154", 3.90mm Width)
Stock660 000
Logic Level Gate
20V
7.3A, 9.9A
12 mOhm @ 9.6A, 10V
2V @ 250µA
15nC @ 4.5V
-
1.14W, 1.43W
-55°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot SI1026X-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 0.305A SOT563F

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
paquet: SOT-563, SOT-666
Stock1 760 604
Logic Level Gate
60V
305mA
1.4 Ohm @ 500mA, 10V
2.5V @ 250µA
0.6nC @ 4.5V
30pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot ZXMN2A04DN8TC
Diodes Incorporated

MOSFET 2N-CH 20V 5.9A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock384 684
Logic Level Gate
20V
5.9A
25 mOhm @ 5.9A, 4.5V
700mV @ 250µA (Min)
22.1nC @ 5V
1880pF @ 10V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
APTMC120TAM17CTPAG
Microsemi Corporation

MOSFET 6N-CH 1200V 147A SP6P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 147A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V
  • Power - Max: 625W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
paquet: SP6
Stock6 352
Standard
1200V (1.2kV)
147A
17 mOhm @ 100A, 20V
2.4V @ 20mA (Typ)
322nC @ 20V
5600pF @ 1000V
625W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTM10DUM02G
Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
paquet: SP6
Stock3 472
Standard
100V
495A
2.5 mOhm @ 200A, 10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
CSD88599Q5DC
Texas Instruments

MOSFET ARRAY 2N-CH 60A 22VSON

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V
  • Power - Max: 12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 22-PowerTFDFN
  • Supplier Device Package: 22-VSON-CLIP (5x6)
paquet: 22-PowerTFDFN
Stock5 648
Standard
60V
-
2.1 mOhm @ 30A, 10V
2.5V @ 250µA
27nC @ 4.5V
4840pF @ 30V
12W
-55°C ~ 150°C (TJ)
Surface Mount
22-PowerTFDFN
22-VSON-CLIP (5x6)
SI4925BDY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 5.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock3 136
Logic Level Gate
30V
5.3A
25 mOhm @ 7.1A, 10V
3V @ 250µA
50nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI5515DC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 4.4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
paquet: 8-SMD, Flat Lead
Stock3 904
Logic Level Gate
20V
4.4A, 3A
40 mOhm @ 4.4A, 4.5V
1V @ 250µA
7.5nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
MCQ4503-TP
Micro Commercial Co

N&P-CHANNEL MOSFET, SOP-8 PACKAG

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
  • Power - Max: 1.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock5 840
-
30V
6.3A, 8.6A
36 mOhm @ 6A, 10V
3V @ 250µA
20nC @ 4.5V
1380pF @ 25V
1.4W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
CAS300M17BM2
Cree/Wolfspeed

MOSFET 2N-CH 1700V 325A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 325A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V
  • Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
  • Power - Max: 1760W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
paquet: Module
Stock7 936
Standard
1700V (1.7kV)
325A
10 mOhm @ 225A, 20V
2.3V @ 15mA (Typ)
1076nC @ 20V
20000pF @ 1000V
1760W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot FDG6303N
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
paquet: 6-TSSOP, SC-88, SOT-363
Stock1 975 920
Logic Level Gate
25V
500mA
450 mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
BUK7K32-100EX
Nexperia USA Inc.

MOSFET 2N-CH 100V 29A LFPAK56

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 29A
  • Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V
  • Power - Max: 64W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
paquet: SOT-1205, 8-LFPAK56
Stock2 688
Standard
100V
29A
27.5 mOhm @ 5A, 10V
4V @ 1mA
34nC @ 10V
2137pF @ 25V
64W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
ALD1117SAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

  • FET Type: 2 P-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock6 112
Standard
10.6V
-
1800 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
BUK7K5R6-30E,115
Nexperia USA Inc.

MOSFET 2N-CH 30V 40A LFPAK56D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
  • Power - Max: 64W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
paquet: SOT-1205, 8-LFPAK56
Stock4 400
Standard
30V
40A
5.6 mOhm @ 25A, 10V
4V @ 1mA
29.7nC @ 10V
1969pF @ 25V
64W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot SI4948BEY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock157 068
Logic Level Gate
60V
2.4A
120 mOhm @ 3.1A, 10V
3V @ 250µA
22nC @ 10V
-
1.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ECH8651R-TL-H
ON Semiconductor

MOSFET 2N-CH 24V 10A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
paquet: 8-SMD, Flat Lead
Stock8 664
Logic Level Gate
24V
10A
14 mOhm @ 5A, 4.5V
-
24nC @ 10V
-
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
SQJQ904E-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
  • Power - Max: 75W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 8 x 8 Dual
  • Supplier Device Package: PowerPAK? 8 x 8 Dual
paquet: PowerPAK? 8 x 8 Dual
Stock20 748
Standard
40V
100A (Tc)
3.4 mOhm @ 20A, 10V
3.5V @ 250µA
75nC @ 10V
5900pF @ 20V
75W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? 8 x 8 Dual
PowerPAK? 8 x 8 Dual
hot BUK9K12-60EX
Nexperia USA Inc.

MOSFET 2N-CH 60V 35A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A
  • Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
  • Power - Max: 68W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
paquet: SOT-1205, 8-LFPAK56
Stock4 160
Logic Level Gate
60V
35A
10.7 mOhm @ 15A, 10V
2.1V @ 1mA
24.5nC @ 5V
3470pF @ 25V
68W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
FDS8858CZ
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8.6A/7.3A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A, 7.3A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock562 662
Logic Level Gate
30V
8.6A, 7.3A
17 mOhm @ 8.6A, 10V
3V @ 250µA
24nC @ 10V
1205pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
CMLDM7484 TR
Central Semiconductor Corp

MOSFET N/P-CH 30V 0.45A SOT-563

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 450mA
  • Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.79nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
paquet: SOT-563, SOT-666
Stock189 744
Standard
30V
450mA
460 mOhm @ 200mA, 4.5V
1V @ 250µA
0.79nC @ 4.5V
45pF @ 25V
150mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563