Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 20A TO262-3
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7 648 |
|
MOSFET (Metal Oxide) | 100V | 20A (Tc) | 10V | 4V @ 20µA | 16nC @ 10V | 1090pF @ 50V | ±20V | - | 44W (Tc) | 50 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Global Power Technologies Group |
MOSFET N-CH 700V 5A TO220F
|
paquet: TO-220-3 Full Pack |
Stock2 912 |
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MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 4V @ 250µA | 23nC @ 10V | 1500pF @ 25V | ±30V | - | 39W (Tc) | 1.65 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 20V 0.88A SC-88
|
paquet: 6-TSSOP, SC-88, SOT-363 |
Stock5 008 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
|
paquet: PowerPAK? SO-8 |
Stock3 568 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 1.8V @ 250µA | 125nC @ 10V | 7770pF @ 15V | ±12V | - | 5.4W (Ta), 83W (Tc) | 3.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
|
paquet: PowerPAK? SO-8 |
Stock14 964 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 1.6V @ 250µA | 185nC @ 10V | 7785pF @ 15V | ±12V | - | 5.4W (Ta), 83W (Tc) | 3 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 65A D2PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4 672 |
|
MOSFET (Metal Oxide) | 60V | 65A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 2410pF @ 25V | ±25V | - | 3.75W (Ta), 150W (Tc) | 16 mOhm @ 32.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 100V 0.075A SOT23-3
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock6 432 |
|
MOSFET (Metal Oxide) | 100V | 75mA (Ta) | 10V | 3.5V @ 1mA | - | 50pF @ 25V | ±20V | - | 330mW (Ta) | 20 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 4VSON
|
paquet: 4-PowerTSFN |
Stock7 920 |
|
MOSFET (Metal Oxide) | 650V | 8.3A (Tc) | 10V | 4.5V @ 300µA | 31.5nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 460 mOhm @ 3.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
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IXYS |
MOSFET N-CH 600V 36A TO-264AA
|
paquet: TO-264-3, TO-264AA |
Stock17 844 |
|
MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 4.5V @ 8mA | 325nC @ 25V | 9000pF @ 25V | ±20V | - | 500W (Tc) | 180 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET P-CH 200V 32A TO-263
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 260 |
|
MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 4V @ 250µA | 185nC @ 10V | 14500pF @ 25V | ±15V | - | 300W (Tc) | 130 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 9A TO220F
|
paquet: TO-220-3 Full Pack, Formed Leads |
Stock6 928 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 1240pF @ 100V | ±30V | - | 29.8W (Tc) | 385 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 56A TO-220
|
paquet: TO-220-3 |
Stock5 248 |
|
MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | ±20V | - | 168W (Tc) | 7 mOhm @ 28A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
paquet: 8-PowerTDFN, 5 Leads |
Stock5 744 |
|
MOSFET (Metal Oxide) | 40V | 24A (Ta), 102A (Tc) | 10V | 3.5V @ 65µA | 23nC @ 10V | 1600pF @ 25V | ±20V | - | 3.6W (Ta), 68W (Tc) | 3.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 12A ECH8
|
paquet: 8-SMD, Flat Lead |
Stock36 000 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4V, 10V | - | 31nC @ 10V | 1700pF @ 10V | ±20V | - | 1.6W (Ta) | 10 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-ECH | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET N-CH 100V 2.6A TSOT26
|
paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock3 024 |
|
MOSFET (Metal Oxide) | 100V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 9.7nC @ 10V | 1167pF @ 25V | ±20V | - | 1.2W (Ta) | 160 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Texas Instruments |
MOSFET N-CH 12V 3.6A PICOSTAR
|
paquet: 3-XFDFN |
Stock6 048 |
|
MOSFET (Metal Oxide) | 12V | 3.6A (Ta) | 1.8V, 4.5V | 1.3V @ 250µA | 1.2nC @ 4.5V | 156pF @ 6V | 8V | - | 500mW (Ta) | 76 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Vishay Siliconix |
MOSFET N-CHAN 850V TO-220AB
|
paquet: TO-220-3 |
Stock6 560 |
|
MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 4V @ 250µA | 122nC @ 10V | 2408pF @ 100V | ±30V | - | 208W (Tc) | 290 mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CHA 40V 26A POWERDI
|
paquet: 8-PowerTDFN |
Stock6 384 |
|
MOSFET (Metal Oxide) | 40V | 26A (Ta), 90A (Tc) | 4.5V, 10V | 3V @ 250µA | 82.2nC @ 10V | 4508pF @ 20V | ±20V | - | 2.6W (Ta), 138W (Tc) | 2.5 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 450MA SOT883
|
paquet: SC-101, SOT-883 |
Stock5 792 |
|
MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 50pF @ 10V | ±20V | - | 360mW (Ta) | 1.6 Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Microsemi Corporation |
MOSFET N-CH 600V 45A T-MAX
|
paquet: TO-247-3 Variant |
Stock5 760 |
|
MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | ±30V | - | 780W (Tc) | 150 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Rohm Semiconductor |
MOSFET N-CH 600V 9A TO220
|
paquet: TO-220-2 Full Pack |
Stock8 340 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 4V @ 1mA | 23nC @ 10V | 430pF @ 25V | ±20V | - | 40W (Tc) | 535 mOhm @ 2.8A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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IXYS |
MOSFET N-CH 100V 60A TO-263
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 860 |
|
MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 4.5V @ 50µA | 49nC @ 10V | 2650pF @ 25V | ±30V | - | 176W (Tc) | 18 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V D2PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2 208 |
|
MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4V @ 250µA | 116nC @ 10V | 7295pF @ 25V | ±20V | - | 2.4W (Ta), 227W (Tc) | 3.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 195A
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock18 180 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 255nC @ 4.5V | 15330pF @ 25V | ±20V | - | 375W (Tc) | 1.95 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 30V 9.7A 8SOIC
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock4 720 |
|
MOSFET (Metal Oxide) | 30V | 9.7A (Ta) | 10V | 1.4V @ 250µA | 70nC @ 4.5V | - | ±12V | - | 1.5W (Ta) | 10.5 mOhm @ 12.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6
|
paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock3 995 916 |
|
MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 6.4nC @ 4.5V | 285pF @ 10V | 12V | - | 1.25W (Ta) | 54 mOhm @ 3.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET N-CH 50V 2.4A 4-DIP
|
paquet: 4-DIP (0.300", 7.62mm) |
Stock33 000 |
|
MOSFET (Metal Oxide) | 50V | 2.4A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 400pF @ 25V | ±20V | - | 1W (Tc) | 100 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 35A POWER56
|
paquet: 8-PowerTDFN |
Stock55 980 |
|
MOSFET (Metal Oxide) | 25V | 35A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 1mA | 133nC @ 10V | 8965pF @ 13V | ±20V | - | 2.5W (Ta), 96W (Tc) | 1.2 mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 500V 8A D2-PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock103 464 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 5.5V @ 100µA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 150W (Tc) | 800 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microchip Technology |
MOSFET P-CH 40V 0.175A TO92-3
|
paquet: TO-226-3, TO-92-3 (TO-226AA) |
Stock15 216 |
|
MOSFET (Metal Oxide) | 40V | 175mA (Tj) | 4.5V, 10V | 2V @ 1mA | - | 60pF @ 25V | ±20V | - | 740mW (Ta) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |