Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 600V 6.1A TO-252
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 336 |
|
MOSFET (Metal Oxide) | 600V | 6.1A (Tc) | 10V | 3.5V @ 220µA | 27nC @ 10V | 550pF @ 100V | ±20V | - | 60W (Tc) | 600 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT323
|
paquet: SC-70, SOT-323 |
Stock3 648 |
|
MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 2.5V | 750mV @ 3.7µA | 0.6nC @ 2.5V | 180pF @ 10V | ±8V | - | 500mW (Ta) | 160 mOhm @ 1.4A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock92 484 |
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MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | ±20V | - | 40W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 900V 6A TO-3P
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paquet: TO-3P-3, SC-65-3 |
Stock6 544 |
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MOSFET (Metal Oxide) | 900V | 8A (Ta) | 10V | - | - | 1730pF @ 10V | ±30V | - | 100W (Tc) | 1.6 Ohm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 60V 30A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7 248 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1725pF @ 25V | ±20V | - | 68W (Tc) | 26 mOhm @ 20A, 10V | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 250V ISOPLUS220
|
paquet: ISOPLUS220? |
Stock2 384 |
|
MOSFET (Metal Oxide) | 250V | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS220? | ISOPLUS220? |
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Vishay Siliconix |
MOSFET N-CH 20V 2.1A SOT23-3
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock5 653 476 |
|
MOSFET (Metal Oxide) | 20V | 2.1A (Ta) | 2.5V, 4.5V | 1.2V @ 50µA | 10nC @ 4.5V | 300pF @ 10V | ±8V | - | 700mW (Ta) | 60 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 5.6A TO-220
|
paquet: TO-220-3 |
Stock62 412 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 5V | 2V @ 250µA | 8nC @ 5V | 235pF @ 25V | ±20V | - | 37W (Tc) | 440 mOhm @ 2.8A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 45A ISOTOP
|
paquet: ISOTOP |
Stock5 520 |
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MOSFET (Metal Oxide) | 800V | 45A | 10V | 4.5V @ 150µA | 781nC @ 10V | 26000pF @ 25V | ±30V | - | 600W (Tc) | 130 mOhm @ 22.5A, 10V | -65°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
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Diodes Incorporated |
MOSFET N-CH 100V 450MA TO92-3
|
paquet: E-Line-3 |
Stock6 576 |
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MOSFET (Metal Oxide) | 100V | 450mA (Ta) | 5V, 10V | 2.4V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 1.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO-247AC
|
paquet: TO-247-3 |
Stock6 936 |
|
MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 5V @ 250µA | 100nC @ 10V | 2720pF @ 25V | ±30V | - | 280W (Tc) | 460 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 30V 270MA SOT-323
|
paquet: SC-70, SOT-323 |
Stock3 456 |
|
MOSFET (Metal Oxide) | 30V | 270mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | 1.3nC @ 5V | 33pF @ 5V | ±20V | - | 330mW (Ta) | 1.5 Ohm @ 10mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 24V 80A IPAK
|
paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock10 728 |
|
MOSFET (Metal Oxide) | 24V | 80A (Tc) | 4.5V, 10V | 3V @ 250µA | 42nC @ 4.5V | 2600pF @ 20V | ±20V | - | 75W (Tc) | 5.8 mOhm @ 80A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 202A D2PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 320 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 4 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7 184 |
|
MOSFET (Metal Oxide) | 55V | 20A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | ±20V | - | 48W (Tc) | 24.5 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET COOLMOS 700V SOT223-3
|
paquet: TO-261-4, TO-261AA |
Stock4 368 |
|
MOSFET (Metal Oxide) | 750V | 7.4A (Tc) | 10V | 3.5V @ 150µA | 14.9nC @ 10V | 328pF @ 100V | ±20V | - | 5W (Tc) | 1 Ohm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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IXYS |
MOSFET N-CH 500V 21A TO-268
|
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock5 248 |
|
MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 4.5V @ 4mA | 84nC @ 10V | 3000pF @ 25V | ±30V | - | 280W (Tc) | 250 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 8.5A TO-220SIS
|
paquet: TO-220-3 Full Pack |
Stock2 448 |
|
MOSFET (Metal Oxide) | 550V | 8.5A (Ta) | 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 40W (Tc) | 860 mOhm @ 4.3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 5A TO-220SIS
|
paquet: TO-220-3 Full Pack |
Stock3 072 |
|
MOSFET (Metal Oxide) | 550V | 5A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 35W (Tc) | 1.7 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A LPT
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4 000 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 1mA | 60nC @ 10V | 1400pF @ 25V | ±20V | - | 40W (Tc) | 196 mOhm @ 9.5A, 10V | 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A SOT23
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock6 640 |
|
MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | ±20V | - | 320mW (Ta) | 1.5 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A TO220
|
paquet: TO-220-2 Full Pack |
Stock9 408 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 4V @ 1mA | 15nC @ 10V | 250pF @ 25V | ±20V | - | 40W (Tc) | 980 mOhm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 200V 0.56A 4-DIP
|
paquet: 4-DIP (0.300", 7.62mm) |
Stock17 172 |
|
MOSFET (Metal Oxide) | 200V | 560mA (Ta) | 10V | 4V @ 250µA | 15nC @ 10V | 340pF @ 25V | ±20V | - | 1W (Ta) | 1.5 Ohm @ 340mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Rohm Semiconductor |
MOSFET N-CH 200V 8A TO220
|
paquet: TO-220-2 Full Pack |
Stock6 672 |
|
MOSFET (Metal Oxide) | 200V | 8A (Tc) | 10V | 5.25V @ 1mA | 8.5nC @ 10V | 330pF @ 25V | ±30V | - | 2.23W (Ta), 40W (Tc) | 770 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 650V 75A TO247
|
paquet: TO-247-4 |
Stock10 896 |
|
MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 4.5V @ 7.5mA | 222nC @ 10V | 7160pF @ 400V | ±30V | - | 595W (Tc) | 23 mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 600V TO220-3
|
paquet: TO-220-3 |
Stock12 060 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 4.5V @ 960µA | 56nC @ 10V | 2660pF @ 100V | ±20V | - | 219W (Tc) | 125 mOhm @ 11.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 250V 17A D2PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5 312 |
|
MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 4V @ 250µA | 29.5nC @ 10V | 1000pF @ 25V | ±20V | - | 110W (Tc) | 165 mOhm @ 8.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 150V 2A POWER33
|
paquet: 8-PowerWDFN |
Stock5 408 |
|
MOSFET (Metal Oxide) | 150V | 2A (Ta), 8.4A (Tc) | 6V, 10V | 4V @ 250µA | 13nC @ 10V | 885pF @ 75V | ±25V | - | 2.3W (Ta), 40W (Tc) | 307 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Rohm Semiconductor |
MOSFET P-CH 45V 16A TCPT3
|
paquet: 3-SMD, Flat Leads |
Stock10 008 |
|
MOSFET (Metal Oxide) | 45V | 16A (Ta) | 4V, 10V | 2.5V @ 1mA | 25.5nC @ 5V | 2150pF @ 10V | ±20V | - | 20W (Tc) | 50 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | TCPT3 | 3-SMD, Flat Leads |
||
Rohm Semiconductor |
MOSFET N-CH 30V 15A 8-HSOP
|
paquet: 8-PowerTDFN |
Stock5 296 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10nC @ 10V | 590pF @ 15V | ±20V | - | 3W (Ta), 22.9W (Tc) | 8.8 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |