Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET COOL MOS 600V
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paquet: - |
Stock3 280 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 250V 100MA SOT-23
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock2 528 |
|
MOSFET (Metal Oxide) | 250V | 100mA (Ta) | 0V, 10V | 1V @ 56µA | 3.5nC @ 5V | 76pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 14 Ohm @ 0.1mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V TO220
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paquet: TO-220-3 |
Stock6 512 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A TO220
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paquet: TO-220-3 |
Stock4 560 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 645pF @ 25V | ±30V | - | 98.4W (Tc) | 1.5 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 55V 60A TO-252
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7 280 |
|
MOSFET (Metal Oxide) | 55V | 60A (Tc) | 10V | 4V @ 253µA | 63nC @ 10V | 3750pF @ 25V | ±20V | - | 1.2W (Ta), 105W (Tc) | 5.5 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 12V 8.3A PPAK 1212-8
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paquet: PowerPAK? 1212-8 |
Stock3 728 |
|
MOSFET (Metal Oxide) | 12V | 8.3A (Ta) | 1.8V, 4.5V | 1V @ 300µA | 39nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 16 mOhm @ 12.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 4.8A 1206-8
|
paquet: 8-SMD, Flat Lead |
Stock72 000 |
|
MOSFET (Metal Oxide) | 20V | 4.8A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 22nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 37 mOhm @ 4.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 56A TO-220AB
|
paquet: TO-220-3 |
Stock3 376 |
|
MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 25 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 4.5A I2PAK
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3 776 |
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MOSFET (Metal Oxide) | 200V | 4.5A (Tc) | 10V | 5V @ 250µA | 7.5nC @ 10V | 270pF @ 25V | ±30V | - | 3.13W (Ta), 52W (Tc) | 1.2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Rohm Semiconductor |
MOSFET N-CH 450V 7A TO-220FN
|
paquet: TO-220-3 Full Pack |
Stock5 472 |
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MOSFET (Metal Oxide) | 450V | 7A (Ta) | 10V | 4V @ 1mA | - | 870pF @ 10V | ±30V | - | 30W (Tc) | 1.1 Ohm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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NXP |
MOSFET N-CH 25V 99A LFPAK
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paquet: SC-100, SOT-669 |
Stock2 320 |
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MOSFET (Metal Oxide) | 25V | 99A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 21.3nC @ 4.5V | 2601pF @ 12V | ±20V | - | 46.4W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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IXYS |
MOSFET N-CH 250V 102A TO-247
|
paquet: TO-247-3 |
Stock4 496 |
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MOSFET (Metal Oxide) | 250V | 102A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 25V 35A SO8FL
|
paquet: 8-PowerTDFN |
Stock3 680 |
|
MOSFET (Metal Oxide) | 25V | 43A (Ta), 269A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 56nC @ 10V | 3923pF @ 12V | ±20V | - | 2.7W (Ta), 104W (Tc) | 0.9 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 800V 750MA TO-263
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4 864 |
|
MOSFET (Metal Oxide) | 800V | 750mA (Tc) | 10V | 4.5V @ 25µA | 8.5nC @ 10V | 220pF @ 25V | ±20V | - | 40W (Tc) | 11 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5 984 |
|
MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 3.5V @ 140µA | 17nC @ 10V | 460pF @ 500V | ±20V | - | 51W (Tc) | 750 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET NCH 700V 9A TO263
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4 064 |
|
MOSFET (Metal Oxide) | 700V | 9A (Tc) | 10V | 4.5V @ 250µA | 35nC @ 10V | 1630pF @ 25V | ±30V | - | 236W (Tc) | 1.2 Ohm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 40V SOT223
|
paquet: TO-261-4, TO-261AA |
Stock6 640 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 2.5A TO252
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock906 840 |
|
MOSFET (Metal Oxide) | 100V | 2.5A (Ta), 11A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 13nC @ 10V | 540pF @ 50V | ±20V | - | 2.1W (Ta), 45W (Tc) | 140 mOhm @ 4.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 53A 8VSON
|
paquet: 8-PowerTDFN |
Stock32 664 |
|
MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 1.9V @ 250µA | 121nC @ 4.5V | 13600pF @ 15V | ±20V | - | 3.2W (Ta) | 0.69 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 500V 80A TO-264
|
paquet: TO-264-3, TO-264AA |
Stock6 048 |
|
MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 6.5V @ 8mA | 200nC @ 10V | 10000pF @ 25V | ±30V | - | 1250W (Tc) | 65 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Infineon Technologies |
MOSFET N-CH 700V 20.5 TO-220
|
paquet: TO-220-3 Full Pack |
Stock8 736 |
|
MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 3.5V @ 90µA | 10.5nC @ 10V | 364pF @ 400V | ±16V | - | 25W (Tc) | 600 mOhm @ 1.8A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 900V 11A TO-3P
|
paquet: TO-3P-3, SC-65-3 |
Stock390 000 |
|
MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 3290pF @ 25V | ±30V | - | 300W (Tc) | 1.1 Ohm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 600V 10A TO-220FP
|
paquet: TO-220-3 Full Pack |
Stock16 464 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4.5V @ 100µA | 68nC @ 10V | 1645pF @ 25V | ±30V | - | 39W (Tc) | 750 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5
|
paquet: SOT-23-5 Thin, TSOT-23-5 |
Stock7 856 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | 175pF @ 10V | ±12V | Schottky Diode (Isolated) | 1.25W (Ta) | 100 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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STMicroelectronics |
MOSFET N-CH 620V 15A TO-220
|
paquet: TO-220-3 |
Stock21 720 |
|
MOSFET (Metal Oxide) | 620V | 15.5A (Tc) | 10V | 4.5V @ 100µA | 94nC @ 10V | 2500pF @ 50V | ±30V | - | 190W (Tc) | 380 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 75V 33A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock56 346 |
|
MOSFET (Metal Oxide) | 75V | 33A (Tc) | 10V | 2.8V @ 1mA | 34nC @ 10V | 2000pF @ 25V | ±16V | - | 80W (Tc) | 29 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 200V 15.2A 8TDSON
|
paquet: 8-PowerTDFN |
Stock80 952 |
|
MOSFET (Metal Oxide) | 200V | 15.2A (Tc) | 10V | 4V @ 30µA | 11.6nC @ 10V | 920pF @ 100V | ±20V | - | 62.5W (Tc) | 90 mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.33A SSM
|
paquet: SC-75, SOT-416 |
Stock1 781 880 |
|
MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | ±8V | - | 150mW (Ta) | 1.31 Ohm @ 100mA, 4.5V | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Diodes Incorporated |
MOSFET N-CH 60V 6.9A SOT223
|
paquet: TO-261-4, TO-261AA |
Stock89 484 |
|
MOSFET (Metal Oxide) | 60V | 5.4A (Ta) | 10V | 3V @ 250µA | 24.2nC @ 5V | 1407pF @ 40V | ±20V | - | 2W (Ta) | 40 mOhm @ 8.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Diodes Incorporated |
MOSFET P-CH 30V 4.6A SOT223
|
paquet: TO-261-4, TO-261AA |
Stock1 164 408 |
|
MOSFET (Metal Oxide) | 30V | 5.4A (Ta) | 4.5V, 10V | 1V @ 250µA | 29.6nC @ 10V | 1022pF @ 15V | ±20V | - | 2W (Ta) | 45 mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |