Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5 696 |
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MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | - | 110W (Tc) | 27 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 1.5A SOT-363
|
paquet: 6-VSSOP, SC-88, SOT-363 |
Stock6 176 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | ±12V | - | 500mW (Ta) | 140 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5 488 |
|
MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | ±20V | - | 190W (Tc) | 14 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 92A TO-262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock22 800 |
|
MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | ±20V | - | 79W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V SOT23
|
paquet: - |
Stock3 584 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 30V
|
paquet: - |
Stock6 672 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET N-CH 500V 6A TO220
|
paquet: TO-220-3 Full Pack |
Stock4 992 |
|
MOSFET (Metal Oxide) | 500V | 6A (Ta) | 10V | - | 14nC @ 10V | 440pF @ 25V | ±30V | - | 28.5W (Tc) | 1.7 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK
|
paquet: SOT-1023, 4-LFPAK |
Stock3 328 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | - | 2.15V @ 1mA | 105nC @ 10V | 6380pF @ 12V | - | - | - | 1.2 mOhm @ 15A, 10V | - | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 8A TO-220
|
paquet: TO-220-3 |
Stock109 968 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 1800pF @ 25V | ±30V | - | 134W (Tc) | 800 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 14A I-PAK
|
paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6 784 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 3V @ 250µA | 20nC @ 5V | 1425pF @ 15V | ±20V | - | 2.8W (Ta), 60W (Tc) | 9.5 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 6.3A 8SOIC
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock10 955 472 |
|
MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 29nC @ 10V | 930pF @ 15V | ±20V | - | 2.5W (Ta) | 32 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 60V 300MA SOT-23
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock1 290 960 |
|
MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4V, 10V | 2.5V @ 1mA | 6nC @ 10V | 33pF @ 10V | ±20V | - | 200mW (Ta) | 1 Ohm @ 300mA, 10V | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 600V 30A TO-247
|
paquet: TO-247-3 |
Stock4 464 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 5V @ 250µA | 115nC @ 10V | 2520pF @ 25V | ±30V | - | 312W (Tc) | 145 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3 552 |
|
MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 4.5V @ 750µA | 44nC @ 10V | 2080pF @ 100V | ±20V | - | 176W (Tc) | 160 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7 632 |
|
MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | ±20V | - | 104W (Tc) | 280 mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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IXYS |
MOSFET N-CH 800V 23A TO-247
|
paquet: TO-247-3 |
Stock6 688 |
|
MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 4.5V @ 3mA | 130nC @ 10V | 4900pF @ 25V | ±30V | - | 500W (Tc) | 420 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 30V 191A SO8FL
|
paquet: 8-PowerTDFN |
Stock3 568 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta), 191A (Tc) | - | 2.5V @ 250µA | 150nC @ 11.5V | 7500pF @ 12V | - | - | - | 1.9 mOhm @ 30A, 10V | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO220F
|
paquet: TO-220-3 Full Pack |
Stock14 160 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 42nC @ 10V | 2010pF @ 50V | ±30V | - | 50W (Tc) | 400 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 200V 2.9A SOT96-1
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock4 496 |
|
MOSFET (Metal Oxide) | 200V | 2.9A (Tc) | 10V | 4V @ 1mA | 40nC @ 10V | 1330pF @ 25V | ±20V | - | 3.5W (Tc) | 165 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 65A U8FL
|
paquet: 8-PowerWDFN |
Stock7 072 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
STMicroelectronics |
MOSFET N-CH 650V 33A I2PAK
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7 008 |
|
MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 5V @ 250µA | 100nC @ 10V | 4650pF @ 100V | ±25V | - | 190W (Tc) | 79 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB
|
paquet: TO-220-3 |
Stock5 552 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 250µA | 122nC @ 10V | 2740pF @ 100V | ±30V | - | 250W (Tc) | 145 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Central Semiconductor Corp |
MOSFET N-CH 100V 2A SOT-89
|
paquet: TO-243AA |
Stock3 888 |
|
MOSFET (Metal Oxide) | 100V | 2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 6nC @ 5V | 550pF @ 25V | 20V | - | 1.2W (Ta) | 300 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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STMicroelectronics |
MOSFET N-CH 75V 80A D2PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock21 324 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 3700pF @ 25V | ±20V | - | 300W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A TO-220
|
paquet: TO-220-3 Full Pack, Isolated Tab |
Stock6 992 |
|
MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | ±30V | - | 35W (Tc) | 390 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
MOSFET N-CH 40V 375A
|
paquet: DirectFET? Isometric L8 |
Stock3 408 |
|
MOSFET (Metal Oxide) | 40V | 375A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 330nC @ 4.5V | 20082pF @ 25V | ±20V | - | 3.8W (Ta), 341W (Tc) | 0.59 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
||
EPC |
TRANS GAN 60V 60A BUMPED DIE
|
paquet: Die |
Stock6 588 |
|
GaNFET (Gallium Nitride) | 60V | 60A (Ta) | 5V | 2.5V @ 16mA | 16nC @ 5V | 1800pF @ 30V | +6V, -4V | - | - | 2.2 mOhm @ 31A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Texas Instruments |
MOSFET N-CH 25V 59A 8-SON
|
paquet: 8-PowerTDFN |
Stock9 444 |
|
MOSFET (Metal Oxide) | 25V | 16A (Ta), 59A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 5nC @ 4.5V | 740pF @ 12.5V | +16V, -12V | - | 3W (Ta) | 8.5 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 40A POWER33
|
paquet: 8-PowerTDFN |
Stock27 846 |
|
MOSFET (Metal Oxide) | 25V | 24A (Ta), 40A (Tc) | 4.5V, 10V | 3V @ 1mA | 44nC @ 10V | 2705pF @ 13V | ±20V | - | 3W (Ta), 60W (Tc) | 3.5 mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ? 33 | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 21.7A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock324 210 |
|
MOSFET (Metal Oxide) | 100V | 21.7A (Tc) | 10V | 4V @ 1mA | - | 1210pF @ 25V | ±20V | - | 89W (Tc) | 75 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |