Page 10 - Transistors - JFET | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MV2N4393	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock4 816	-	-	-	-	-	-	-	-	-	-	-	-
MV2N4391UB	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock6 880	-	-	-	-	-	-	-	-	-	-	-	-
2N5114JTXL02	Vishay Siliconix	JFET P-CH 30V TO-206AA FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	paquet: TO-206AA, TO-18-3 Metal Can	Stock3 040	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N5114JTX02	Vishay Siliconix	JFET P-CH 30V TO-206AA FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	paquet: TO-206AA, TO-18-3 Metal Can	Stock6 720	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4860JAN02	Vishay Siliconix	JFET N-CH 30V TO-206 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	paquet: TO-206AA, TO-18-3 Metal Can	Stock7 328	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4858JTXL02	Vishay Siliconix	JFET N-CH 40V 80MA TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	paquet: TO-206AA, TO-18-3 Metal Can	Stock3 376	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N5461RLRA	ON Semiconductor	JFET P-CH 40V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -65°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3 760	40V	-	2mA @ 15V	-	1V @ 1µA	7pF @ 15V	-	350mW	-65°C ~ 135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
P1086	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V Resistance - RDS(On): 75 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA)	Stock3 632	30V	-	10mA @ 20V	-	10V @ 1µA	45pF @ 15V	75 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J174	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 85 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA)	Stock5 680	30V	-	20mA @ 15V	-	5V @ 10nA	-	85 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J112_D11Z	Fairchild/ON Semiconductor	JFET N-CH 35V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 50 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3 456	35V	-	5mA @ 15V	-	1V @ 1µA	-	50 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSK30YTA	Fairchild/ON Semiconductor	JFET N-CH 50V 0.1W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3 568	50V	-	1.2mA @ 10V	-	400mV @ 100nA	8.2pF @ 0V	-	100mW	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5462_D27Z	Fairchild/ON Semiconductor	JFET P-CH 40V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock7 184	40V	-	4mA @ 15V	-	1.8V @ 1µA	7pF @ 15V	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PMBFJ176,215	NXP	JFET P-CH 30V 0.3W SOT23 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) Resistance - RDS(On): 250 Ohm Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	paquet: TO-236-3, SC-59, SOT-23-3	Stock7 648	30V	30V	2mA @ 15V	-	1V @ 10nA	8pF @ 10V (VGS)	250 Ohm	300mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
PMBFJ112,215	NXP	JFET N-CH 40V 0.3W SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Resistance - RDS(On): 50 Ohm Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	paquet: TO-236-3, SC-59, SOT-23-3	Stock4 288	40V	40V	5mA @ 15V	-	5V @ 1µA	6pF @ 10V (VGS)	50 Ohm	300mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
2N4091	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 30 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	paquet: TO-206AA, TO-18-3 Metal Can	Stock14 400	40V	40V	30mA @ 20V	-	-	16pF @ 20V	30 Ohm	360mW	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N3821	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): 50V Current - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	paquet: TO-206AF, TO-72-4 Metal Can	Stock3 840	50V	50V	2.5mA @ 15V	-	4V @ 0.5nA	6pF @ 15V	-	300mW	-55°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MMBFJ201	Fairchild/ON Semiconductor	JFET N-CH 40V 350MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	paquet: TO-236-3, SC-59, SOT-23-3	Stock1 988 844	40V	-	200µA @ 20V	-	300mV @ 10nA	-	-	350mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
J113	Fairchild/ON Semiconductor	JFET N-CH 35V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 100 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA)	Stock563 040	35V	-	2mA @ 15V	-	500mV @ 1µA	-	100 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J175-D26Z	Fairchild Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 125 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3	paquet: -	Request a Quote	30 V	-	7 mA @ 15 V	-	3 V @ 10 nA	-	125 Ohms	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
MMBFJ177LT1	onsemi	SS P-CHAN 25V SOT23 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IF170BST3TR	InterFET	JFET N-Channel -30V Low Noise FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Resistance - RDS(On): 50 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	paquet: -	Request a Quote	-	30 V	7 mA @ 10 V	-	800 mV @ 1 nA	15pF @ 10V	50 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
MQ2N4858UB	Microchip Technology	JFET N-CH 40V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 60 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	paquet: -	Request a Quote	40 V	40 V	8 mA @ 15 V	-	800 mV @ 500 pA	18pF @ 10V	60 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
SMP5486	InterFET	JFET N-Channel -25V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25 V Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Resistance - RDS(On): 150 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	paquet: -	Request a Quote	-	25 V	12 mA @ 15 V	-	4 V @ 10 nA	3.5pF @ 15V	150 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
J308-TO-92-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 25V TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Resistance - RDS(On): 35 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	paquet: -	Stock2 940	25 V	-	12 mA @ 10 V	-	1 V @ 1 nA	4pF @ 10V	35 Ohms	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2N4416A-TO-72-4L-ROHS	Linear Integrated Systems, Inc.	WIDEBAND, HIGH GAIN, SINGLE, N- FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 0.8pF @ 15V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72-4	paquet: -	Stock1 140	35 V	-	-	-	-	0.8pF @ 15V	-	300 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72-4
2N5116UB-TR	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	paquet: -	Request a Quote	30 V	30 V	25 mA @ 15 V	-	4 V @ 1 nA	27pF @ 15V	175 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
LS841-TO-78-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V TO78-6 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: -	Stock1 488	60 V	-	500 µA @ 20 V	-	1 V @ 1 nA	10pF @ 20V	-	400 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
MX2N5116UB	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	paquet: -	Request a Quote	30 V	30 V	5 mA @ 15 V	-	1 V @ 1 nA	27pF @ 15V	175 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
MQ2N5114UB	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Resistance - RDS(On): 75 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	paquet: -	Request a Quote	30 V	30 V	30 mA @ 18 V	-	5 V @ 1 nA	25pF @ 15V	75 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
MQ2N4091UB	Microchip Technology	JFET N-CH 40V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 30 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	paquet: -	Request a Quote	40 V	40 V	30 mA @ 20 V	-	-	16pF @ 20V	30 Ohms	360 mW	-65°C ~ 175°C (TJ)	Surface Mount	3-SMD, No Lead	UB

MV2N4393

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock4 816

-

MV2N4391UB

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock6 880

-

2N5114JTXL02

Vishay Siliconix

JFET P-CH 30V TO-206AA

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

paquet: TO-206AA, TO-18-3 Metal Can

Stock3 040

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N5114JTX02

Vishay Siliconix

JFET P-CH 30V TO-206AA

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

paquet: TO-206AA, TO-18-3 Metal Can

Stock6 720

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4860JAN02

Vishay Siliconix

JFET N-CH 30V TO-206

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

paquet: TO-206AA, TO-18-3 Metal Can

Stock7 328

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4858JTXL02

Vishay Siliconix

JFET N-CH 40V 80MA TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

paquet: TO-206AA, TO-18-3 Metal Can

Stock3 376

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N5461RLRA

ON Semiconductor

JFET P-CH 40V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3 760

40V

-

2mA @ 15V

-

1V @ 1µA

7pF @ 15V

-

350mW

-65°C ~ 135°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

P1086

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
Resistance - RDS(On): 75 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA)

Stock3 632

30V

-

10mA @ 20V

-

10V @ 1µA

45pF @ 15V

75 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J174

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 85 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA)

Stock5 680

30V

-

20mA @ 15V

-

5V @ 10nA

-

85 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J112_D11Z

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 50 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3 456

35V

-

5mA @ 15V

-

1V @ 1µA

-

50 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSK30YTA

Fairchild/ON Semiconductor

JFET N-CH 50V 0.1W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3 568

50V

-

1.2mA @ 10V

-

400mV @ 100nA

8.2pF @ 0V

-

100mW

125°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5462_D27Z

Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock7 184

40V

-

4mA @ 15V

-

1.8V @ 1µA

7pF @ 15V

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PMBFJ176,215

NXP

JFET P-CH 30V 0.3W SOT23

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Resistance - RDS(On): 250 Ohm
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

paquet: TO-236-3, SC-59, SOT-23-3

Stock7 648

30V

2mA @ 15V

-

1V @ 10nA

8pF @ 10V (VGS)

250 Ohm

300mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

PMBFJ112,215

NXP

JFET N-CH 40V 0.3W SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Resistance - RDS(On): 50 Ohm
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

paquet: TO-236-3, SC-59, SOT-23-3

Stock4 288

40V

5mA @ 15V

-

5V @ 1µA

6pF @ 10V (VGS)

50 Ohm

300mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

2N4091

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 30 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

paquet: TO-206AA, TO-18-3 Metal Can

Stock14 400

40V

30mA @ 20V

-

16pF @ 20V

30 Ohm

360mW

-65°C ~ 175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2N3821

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): 50V
Current - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

paquet: TO-206AF, TO-72-4 Metal Can

Stock3 840

50V

2.5mA @ 15V

-

4V @ 0.5nA

6pF @ 15V

-

300mW

-55°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MMBFJ201

Fairchild/ON Semiconductor

JFET N-CH 40V 350MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

Stock1 988 844

40V

-

200µA @ 20V

-

300mV @ 10nA

-

350mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

J113

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 100 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA)

Stock563 040

35V

-

2mA @ 15V

-

500mV @ 1µA

-

100 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J175-D26Z

Fairchild Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 125 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3

paquet: -

Request a Quote

30 V

-

7 mA @ 15 V

-

3 V @ 10 nA

-

125 Ohms

350 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92-3

MMBFJ177LT1

onsemi

SS P-CHAN 25V SOT23

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

IF170BST3TR

InterFET

JFET N-Channel -30V Low Noise

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Resistance - RDS(On): 50 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

paquet: -

Request a Quote

-

30 V

7 mA @ 10 V

-

800 mV @ 1 nA

15pF @ 10V

50 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

MQ2N4858UB

Microchip Technology

JFET N-CH 40V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 60 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

paquet: -

Request a Quote

40 V

8 mA @ 15 V

-

800 mV @ 500 pA

18pF @ 10V

60 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

SMP5486

InterFET

JFET N-Channel -25V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25 V
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Resistance - RDS(On): 150 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

paquet: -

Request a Quote

-

25 V

12 mA @ 15 V

-

4 V @ 10 nA

3.5pF @ 15V

150 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

J308-TO-92-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 25V TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Resistance - RDS(On): 35 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

paquet: -

Stock2 940

25 V

-

12 mA @ 10 V

-

1 V @ 1 nA

4pF @ 10V

35 Ohms

350 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2N4416A-TO-72-4L-ROHS

Linear Integrated Systems, Inc.

WIDEBAND, HIGH GAIN, SINGLE, N-

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 0.8pF @ 15V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72-4

paquet: -

Stock1 140

35 V

-

0.8pF @ 15V

-

300 mW

-55°C ~ 135°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72-4

2N5116UB-TR

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

paquet: -

Request a Quote

30 V

25 mA @ 15 V

-

4 V @ 1 nA

27pF @ 15V

175 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

LS841-TO-78-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO78-6

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: -

Stock1 488

60 V

-

500 µA @ 20 V

-

1 V @ 1 nA

10pF @ 20V

-

400 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

MX2N5116UB

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

paquet: -

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30 V

5 mA @ 15 V

-

1 V @ 1 nA

27pF @ 15V

175 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

MQ2N5114UB

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Resistance - RDS(On): 75 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

paquet: -

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30 V

30 mA @ 18 V

-

5 V @ 1 nA

25pF @ 15V

75 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

MQ2N4091UB

Microchip Technology

JFET N-CH 40V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

paquet: -

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40 V

30 mA @ 20 V

-

16pF @ 20V

30 Ohms

360 mW

-65°C ~ 175°C (TJ)

Surface Mount

3-SMD, No Lead

UB