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IXYS |
IGBT 2500V 55A 300W PLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500V
- Current - Collector (Ic) (Max): 55A
- Current - Collector Pulsed (Icm): 180A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A
- Power - Max: 300W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 103nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.6µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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paquet: TO-247-3 |
Stock5 424 |
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IXYS |
MOD IGBT SGL SWITCH 1700V E10
- IGBT Type: NPT
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 2400A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 2400A
- Current - Collector Cutoff (Max): 120mA
- Input Capacitance (Cies) @ Vce: 230nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E10
- Supplier Device Package: E10
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paquet: E10 |
Stock7 424 |
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IXYS |
MODULE IGBT CBI E1
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 7A
- Power - Max: 38W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
- Current - Collector Cutoff (Max): 10µA
- Input Capacitance (Cies) @ Vce: 0.34nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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paquet: E1 |
Stock5 120 |
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IXYS |
MOSFET N-CH 100V 200A PLUS220SMD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PLUS-220SMD
- Package / Case: PLUS-220SMD
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paquet: PLUS-220SMD |
Stock3 776 |
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IXYS |
MOSFET N-CH 500V 30A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4925pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock432 456 |
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IXYS |
MOSFET N-CH 600V 22A PLUS220-SMD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PLUS-220SMD
- Package / Case: PLUS-220SMD
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paquet: PLUS-220SMD |
Stock3 216 |
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IXYS |
MOSFET N-CH 600V 41A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 41A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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paquet: SOT-227-4, miniBLOC |
Stock4 656 |
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IXYS |
MOSFET N-CH 100V 100A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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paquet: TO-264-3, TO-264AA |
Stock7 920 |
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IXYS |
MOSFET N-CH 600V 38A I4-PAC-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC?
- Package / Case: i4-Pac?-5 (3 leads)
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paquet: i4-Pac?-5 (3 leads) |
Stock2 000 |
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IXYS |
MOSFET N-CH 500V 30A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock391 812 |
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IXYS |
MOSFET N-CH 300V 50A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock5 888 |
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IXYS |
MOSFET N-CH 40V 220A TO-263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7 (IXTA..7)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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paquet: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock7 216 |
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IXYS |
MOSFET N-CH 75V 230A TO-263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7 (IXTA..7)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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paquet: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock2 560 |
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IXYS |
MOSFET N-CH 600V 14A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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paquet: TO-3P-3, SC-65-3 |
Stock390 000 |
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IXYS |
MOSFET N-CH 55V 110A TO-263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7 (IXTA..7)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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paquet: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock5 680 |
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IXYS |
MOSFET N-CH 500V 8A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 048 |
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IXYS |
MOSFET N-CH 500V 16A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 330 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock5 136 |
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IXYS |
MOSFET N-CH 650V 120A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock4 272 |
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IXYS |
MOSFET N-CH 850V 30A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 695W (Tc)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock6 800 |
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IXYS |
MOSFET N-CH 75V 70A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2725pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 864 |
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IXYS |
THYRISTOR PHASE 1200V TO-247AD
- Voltage - Off State: 1200V
- Voltage - Gate Trigger (Vgt) (Max): 1.3V
- Current - Gate Trigger (Igt) (Max): 28mA
- Voltage - On State (Vtm) (Max): 1.56V
- Current - On State (It (AV)) (Max): 30A
- Current - On State (It (RMS)) (Max): 47A
- Current - Hold (Ih) (Max): 60mA
- Current - Off State (Max): 10µA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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paquet: TO-247-3 |
Stock3 888 |
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IXYS |
THYRISTOR PHASE 1200V TO-263AB
- Voltage - Off State: 1200V
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 28mA
- Voltage - On State (Vtm) (Max): 1.6V
- Current - On State (It (AV)) (Max): 19A
- Current - On State (It (RMS)) (Max): 29A
- Current - Hold (Ih) (Max): 50mA
- Current - Off State (Max): 5mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2 880 |
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IXYS |
RECT BRIDGE 1PH 800V FO-T-A
- Structure: Bridge, Single Phase - All SCRs
- Number of SCRs, Diodes: 4 SCRs
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 53A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
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paquet: FO-T-A |
Stock2 896 |
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IXYS |
DIODE GEN PURP 1.2KV 110A DO203
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 110A
- Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 6mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -40°C ~ 180°C
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paquet: DO-203AB, DO-5, Stud |
Stock2 576 |
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IXYS |
DIODE GEN PURP 600V 20A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 2.32V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: TO-220-2 |
Stock5 936 |
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IXYS |
DIODE MODULE 16.8KV 1.7A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 16800V
- Current - Average Rectified (Io) (per Diode): 1.7A
- Voltage - Forward (Vf) (Max) @ If: 12V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 16800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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paquet: Module |
Stock5 664 |
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IXYS |
RECT BRIDGE 100A 1200V FO-T-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
- Supplier Device Package: FO-T-A
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paquet: FO-T-A |
Stock6 528 |
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IXYS |
IC REG CTRLR HALF-BRIDGE 24DIP
- Output Type: Transistor Driver
- Function: Step-Up/Step-Down
- Output Configuration: Positive
- Topology: Half-Bridge
- Number of Outputs: 2
- Output Phases: 2
- Voltage - Supply (Vcc/Vdd): 12V
- Frequency - Switching: 10kHz ~ 400kHz
- Duty Cycle (Max): 95%
- Synchronous Rectifier: No
- Clock Sync: No
- Serial Interfaces: -
- Control Features: Dead Time Control, Enable, Frequency Control
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 24-DIP (0.300", 7.62mm)
- Supplier Device Package: 24-DIP
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paquet: 24-DIP (0.300", 7.62mm) |
Stock18 072 |
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IXYS |
IC LED DRIVER RGLTR 200MA 16TQFN
- Type: DC DC Regulator
- Topology: Switched Capacitor (Charge Pump)
- Internal Switch(s): Yes
- Number of Outputs: 2
- Voltage - Supply (Min): 2.7V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 6V
- Current - Output / Channel: 200mA
- Frequency: 1MHz
- Dimming: -
- Applications: Camera Flash
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-WFQFN Exposed Pad
- Supplier Device Package: 16-TQFN (3x3)
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paquet: 16-WFQFN Exposed Pad |
Stock18 996 |
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IXYS |
IC DRVR MOSF/IGBT 30A TO220-5
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 8.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 30A, 30A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 18ns, 16ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-5
- Supplier Device Package: TO-220-5
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paquet: TO-220-5 |
Stock5 280 |
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