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IXYS |
IGBT 600V 75A 830W PLUS TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 500A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
- Power - Max: 830W
- Switching Energy: 1.7mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 370nC
- Td (on/off) @ 25°C: 40ns/120ns
- Test Condition: 400V, 80A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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paquet: TO-247-3 |
Stock7 040 |
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IXYS |
IGBT 1200V 50A 200W TO247
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
- Power - Max: 200W
- Switching Energy: 5.4mJ (on), 2.6mJ (off)
- Input Type: Standard
- Gate Charge: 150nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 35A, 39 Ohm, 15V
- Reverse Recovery Time (trr): 80ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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paquet: ISOPLUS247? |
Stock13 860 |
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IXYS |
MOD IGBT RBSOA 1200V 135A Y4-M5
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 135A
- Power - Max: 560W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
- Current - Collector Cutoff (Max): 5mA
- Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M5
- Supplier Device Package: Y4-M5
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paquet: Y4-M5 |
Stock4 608 |
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IXYS |
IGBT MODULE 1200V ISOPLUS247
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 43A
- Power - Max: 150W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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paquet: ISOPLUS247? |
Stock3 584 |
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IXYS |
MOSFET N-CH 4500V 0.2A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4500V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Rds On (Max) @ Id, Vgs: 750 Ohm @ 10mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5 664 |
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IXYS |
MOSFET P-CH 150V 22A ISOPLUS220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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paquet: ISOPLUS220? |
Stock5 744 |
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IXYS |
MOSFET N-CH 500V 32A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock423 384 |
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IXYS |
MOSFET N-CH 900V 6A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock3 952 |
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IXYS |
MOSFET N-CH 800V 9A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock5 648 |
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IXYS |
MOSFET N-CH 1200V 6A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock5 792 |
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IXYS |
MOSFET N-CH 150V 56A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock60 492 |
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IXYS |
MOSFET N-CH 800V 0.1A TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2 784 |
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IXYS |
MOSFET P-CH 85V 24A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 492 |
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IXYS |
MOSFET 6N-CH 75V 118A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 118A
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: ISOPLUS-DIL?
- Supplier Device Package: ISOPLUS-DIL?
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paquet: ISOPLUS-DIL? |
Stock5 376 |
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IXYS |
SCR THYRISTOR SGL 1600V WC-800
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: WC-800
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paquet: WC-800 |
Stock3 568 |
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IXYS |
MOD THYRISTOR/DIODE 2000V Y1-CU
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 2000V
- Current - On State (It (AV)) (Max): 240A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
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paquet: Y1-CU |
Stock4 320 |
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IXYS |
MOD THYRISTOR/DIODE 1600V Y4-M6
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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paquet: TO-240AA |
Stock7 024 |
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IXYS |
MOD THYRISTOR 1200V 130A ECOPAC2
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 200A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 3600A, 3850A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 130°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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paquet: ECO-PAC2 |
Stock2 544 |
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IXYS |
MOD THYRISTOR DUAL 1200V I4-PAC
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 40A
- Current - On State (It (RMS)) (Max): 63A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 50mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
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paquet: i4-Pac?-5 |
Stock2 100 |
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IXYS |
DIODE GEN PURP 600V 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 650µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-247-2 |
Stock5 488 |
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IXYS |
DIODE MODULE 2KV 120A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 2000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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paquet: TO-240AA |
Stock7 664 |
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IXYS |
DIODE ARRAY 600V 30A ISOPLUS220
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.62V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 500µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220?
- Supplier Device Package: ISOPLUS220?
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paquet: ISOPLUS220? |
Stock3 808 |
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IXYS |
DIODE ARRAY GP 300V 30A TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.16V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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paquet: TO-247-3 |
Stock2 912 |
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IXYS |
DIODE ARRAY SCHOTTKY 45V TO263
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 480mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2 416 |
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IXYS |
DIODE MODULE 1.2KV 260A Y4-M6
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 260A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 260A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 12mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
- Supplier Device Package: Y4-M6
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paquet: Y4-M6 |
Stock4 544 |
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IXYS |
RECT BRIDGE 3PH 1200V PWS-E-1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 175A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
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paquet: PWS-E1 |
Stock6 880 |
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IXYS |
IC GATE DRIVER 9A 6-DFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 23ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (4x5)
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paquet: 6-VDFN Exposed Pad |
Stock7 200 |
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IXYS |
IC GATE DRIVER 4A 8-DFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 9ns, 8ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x4)
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paquet: 8-VDFN Exposed Pad |
Stock6 656 |
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IXYS |
15A DUAL MOSFET DRIVER
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 8 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 15A, 15A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 4ns, 4ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-SMD
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paquet: 8-SMD, Flat Lead |
Stock4 944 |
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IXYS |
MONO SOLAR CELL 22MM X 7MM
- Power (Watts) - Max: -
- Current @ Pmpp: 3.8mA
- Voltage @ Pmpp: 3.4V
- Current Short Circuit (Isc): 4.4mA
- Type: Monocrystalline
- Voltage - Open Circuit: 4.7V
- Operating Temperature: -
- Package / Case: Cell (8)
- Size / Dimension: 0.866" L x 0.276" W x 0.074" H (22.00mm x 7.00mm x 1.80mm)
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paquet: Cell (8) |
Stock6 444 |
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