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IXYS |
IGBT 300V 120A 250W TO263AA
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 300V
- Current - Collector (Ic) (Max): 120A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
- Power - Max: 250W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 134nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXGA)
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 112 |
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IXYS |
IGBT 1200V 75A 300W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 180A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
- Power - Max: 300W
- Switching Energy: 13mJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: 36ns/360ns
- Test Condition: 960V, 45A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXSH)
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paquet: TO-247-3 |
Stock4 448 |
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IXYS |
IGBT 600V 75A 300W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 250A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 300W
- Switching Energy: 330µJ (on), 230µJ (off)
- Input Type: Standard
- Gate Charge: 77nC
- Td (on/off) @ 25°C: 19ns/60ns
- Test Condition: 400V, 30A, 3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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paquet: TO-247-3 |
Stock3 664 |
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IXYS |
IGBT 3000V 40A 160W ISOPLUSI4
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 250A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
- Power - Max: 160W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 142nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.5µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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paquet: i4-Pac?-5 (3 leads) |
Stock4 848 |
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IXYS |
MOSFET N-CH 55V 180A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock103 464 |
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IXYS |
MOSFET N-CH 600V 18A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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paquet: TO-220-3, Short Tab |
Stock2 432 |
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IXYS |
MOSFET N-CH 500V 20A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-3P-3 Full Pack
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paquet: TO-3P-3 Full Pack |
Stock15 828 |
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IXYS |
MOSFET N-CH 1500V 7.5A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 545W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 4A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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paquet: SOT-227-4, miniBLOC |
Stock3 200 |
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IXYS |
MOSFET N-CH 600V 37A ISOPLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 92 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS264?
- Package / Case: ISOPLUS264?
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paquet: ISOPLUS264? |
Stock3 632 |
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IXYS |
MOSFET P-CH 500V 10A TO-268
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3 264 |
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IXYS |
MOSFET N-CH 800V 15A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock4 928 |
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IXYS |
MOSFET N-CH 200V 58A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock7 504 |
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IXYS |
MOSFET N-CH 200V 98A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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paquet: TO-220-3, Short Tab |
Stock6 704 |
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IXYS |
MOSFET N-CH 500V 26A TO-263AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 448 |
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IXYS |
MOSFET N-CH 100V 130A TO-263AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 65A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3 088 |
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IXYS |
MOSFET N-CH 500V 50A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 570W (Tc)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock7 408 |
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IXYS |
MOD THYRISTOR 800V 105A ECO-PAC2
- Structure: Common Anode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 105A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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paquet: ECO-PAC2 |
Stock7 808 |
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IXYS |
DIODE AVALANCHE 1.2KV 25A DO203
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -40°C ~ 180°C
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paquet: DO-203AA, DO-4, Stud |
Stock7 600 |
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IXYS |
DIODE GEN PURP 600V 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.61V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 408 |
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IXYS |
DIODE GEN PURP 1.8KV 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 230ns
- Current - Reverse Leakage @ Vr: 200µA @ 1800V
- Capacitance @ Vr, F: 32pF @ 1200V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: TO-247-2 |
Stock12 702 |
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IXYS |
DIODE MODULE 600V 30A ECO-PAC1
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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paquet: ECO-PAC1 |
Stock4 624 |
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IXYS |
DIODE ARRAY GP 200V 8A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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paquet: TO-220-3 |
Stock4 032 |
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IXYS |
DIODE MODULE 800V 113A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io) (per Diode): 113A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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paquet: TO-240AA |
Stock3 472 |
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IXYS |
DIODE ARRAY GP 300V 30A TO3P
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.34V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 300V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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paquet: TO-3P-3, SC-65-3 |
Stock103 464 |
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IXYS |
RECT BRIDGE 3PH 140A 1400V PWS-C
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 140A
- Voltage - Forward (Vf) (Max) @ If: 1.09V @ 40A
- Current - Reverse Leakage @ Vr: 100µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-C
- Supplier Device Package: PWS-C
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paquet: PWS-C |
Stock6 576 |
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IXYS |
BRIDGE RECTIFIER SINGLE PHASE
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 122A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A
- Current - Reverse Leakage @ Vr: 200µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: PWS-E
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paquet: Module |
Stock7 472 |
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IXYS |
IC LED DRVR LIN DIM 32MA 16TQFN
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 6
- Voltage - Supply (Min): 2.5V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: -
- Current - Output / Channel: 32mA
- Frequency: -
- Dimming: Analog, PWM
- Applications: Backlight
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-WFQFN Exposed Pad
- Supplier Device Package: 16-TQFN (3x3)
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paquet: 16-WFQFN Exposed Pad |
Stock30 036 |
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IXYS |
RF MOSFET DRIVER 20 AMP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 8 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 20A, 20A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 3ns, 3ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 7-SMD, Flat Lead
- Supplier Device Package: DE275
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paquet: 7-SMD, Flat Lead |
Stock7 632 |
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IXYS |
IC GATE DRIVER SGL 9A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 23ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock6 512 |
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IXYS |
IC DRIVER ISOPLUS I4-PAC
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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paquet: i4-Pac?-5 (3 leads) |
Stock4 720 |
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