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Infineon Technologies |
MOSFET N-CH I2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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paquet: - |
Stock3 040 |
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Infineon Technologies |
MOSFET N-CH 100V 59A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250mA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock2 608 |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4 080 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 536 |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock7 424 |
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Infineon Technologies |
MOSFET N-CH 600V 4.3A TO-251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 61W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6 288 |
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Infineon Technologies |
MOSFET N-CH 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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paquet: 8-PowerTDFN |
Stock3 824 |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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paquet: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock38 220 |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390 000 |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 341W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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paquet: TO-247-3 |
Stock19 728 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock24 864 |
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Infineon Technologies |
MOSFET P-CH 60V 80A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 340W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock402 744 |
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Infineon Technologies |
FET RF LDMOS 4W SON10
- Transistor Type: LDMOS
- Frequency: 940MHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 50mA
- Power - Output: 5W
- Voltage - Rated: 65V
- Package / Case: 10-LDFN Exposed Pad
- Supplier Device Package: PG-SON-10
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paquet: 10-LDFN Exposed Pad |
Stock5 600 |
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Infineon Technologies |
TRANS PNP 45V 0.1A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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paquet: SC-70, SOT-323 |
Stock4 496 |
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Infineon Technologies |
TRANS PREBIAS NPN 250MW TSFP-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 160MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
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paquet: SOT-723 |
Stock6 944 |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 500µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-247-3 |
Stock6 064 |
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Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT323
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 150nA @ 70V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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paquet: SC-70, SOT-323 |
Stock6 032 |
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Infineon Technologies |
IC CONTROLLER DIGITAL QFN
- Applications: Controller, Intel VR12, VR12.5
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (6x6)
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paquet: 48-VFQFN Exposed Pad |
Stock4 464 |
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Infineon Technologies |
IC REG BUCK ADJ SNGL/DL 198BGA
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1 or 2
- Voltage - Input (Min): 3.14V
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 3.3V
- Current - Output: 30A, 15A
- Frequency - Switching: 170kHz ~ 460kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 159-BBGA Power Module
- Supplier Device Package: 159-BGA Power Block (15.5x9.25)
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paquet: 159-BBGA Power Module |
Stock40 164 |
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Infineon Technologies |
IC DRIVER LO SIDE 50V 3A SOT-223
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 50V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3A
- Rds On (Typ): 155 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Slew Rate Controlled
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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paquet: TO-261-4, TO-261AA |
Stock153 300 |
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Infineon Technologies |
IC DVR HI SIDE DUAL 600V 16-SOIC
- Driven Configuration: High-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.6V, 3.5V
- Current - Peak Output (Source, Sink): 500mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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paquet: 16-SOIC (0.154", 3.90mm Width) |
Stock31 200 |
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Infineon Technologies |
IC OFFLINE CTRLR SMPS CM 8DIP
- Output Isolation: Isolated
- Internal Switch(s): No
- Voltage - Breakdown: -
- Topology: Flyback
- Voltage - Start Up: 13.5V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 67kHz
- Power (Watts): -
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: P-DIP-8
- Mounting Type: Through Hole
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paquet: 8-DIP (0.300", 7.62mm) |
Stock473 076 |
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Infineon Technologies |
IC DSL FRONT-END 2.2V 324-LBGA
- Function: Symmetrical DSL Front End (SDFE)
- Interface: HDLC, Serial, TDM
- Number of Circuits: 2
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): 500mW
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 324-LBGA
- Supplier Device Package: PG-LBGA-324-2
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paquet: 324-LBGA |
Stock4 944 |
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Infineon Technologies |
IC CONTROLLER 2-CH SER 80-MQFP
- Applications: -
- Interface: Serial
- Voltage - Supply: 4.75 V ~ 5.25 V
- Package / Case: 80-QFP
- Supplier Device Package: PG-MQFP-80
- Mounting Type: Surface Mount
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paquet: 80-QFP |
Stock4 752 |
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Infineon Technologies |
IC SWITCH PHY 64-TQFP
- Protocol: -
- Function: -
- Interface: -
- Standards: -
- Voltage - Supply: -
- Current - Supply: -
- Operating Temperature: -
- Package / Case: 64-LQFP
- Supplier Device Package: P-TQFP-64
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paquet: 64-LQFP |
Stock6 672 |
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Infineon Technologies |
IC MCU 16BIT 384KB FLASH 144LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 119
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: 144-LQFP (20x20)
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paquet: 144-LQFP Exposed Pad |
Stock5 376 |
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Infineon Technologies |
IC MCU 16BIT 576KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 66MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 576KB (576K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 50K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
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paquet: 100-LQFP Exposed Pad |
Stock5 392 |
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Infineon Technologies |
IC MCU 32BIT 64KB FLASH 48VQFN
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 80MHz
- Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
- Peripherals: DMA, I2S, LED, POR, PWM, WDT
- Number of I/O: 21
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 20K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 9x12b, D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-53
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paquet: 48-VFQFN Exposed Pad |
Stock2 096 |
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Infineon Technologies |
TVS DIODE 5.5VWM TSSLP2-2
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 6.05V
- Voltage - Clamping (Max) @ Ipp: 14V
- Current - Peak Pulse (10/1000µs): 3A (8/20µs)
- Power - Peak Pulse: 56W
- Power Line Protection: -
- Applications: General Purpose
- Capacitance @ Frequency: 7pF @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 2-XFDFN
- Supplier Device Package: WLL-2-1
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paquet: 2-XFDFN |
Stock145 884 |
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Infineon Technologies |
IC AMP SI-MMIC
- Frequency: 1.55GHz ~ 1.615GHz
- P1dB: -9dBm
- Gain: 17dB
- Noise Figure: 0.55dB
- RF Type: Galileo, GLONASS, GPS
- Voltage - Supply: 1.5 V ~ 3.3 V
- Current - Supply: 3.8mA
- Test Frequency: 1.55GHz ~ 1.615GHz
- Package / Case: 6-XFDFN
- Supplier Device Package: TSNP-6-2
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paquet: 6-XFDFN |
Stock3 418 |
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