Produits Infineon Technologies

SPD30N03S2L10GBTMA1

Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 41.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

IPI024N06N3GHKSA1

Infineon Technologies

MOSFET N-CH 60V 120A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 196µA
• Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFR4105ZTRRPBF

Infineon Technologies

MOSFET N-CH 55V 30A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRFR8401TRL

Infineon Technologies

MOSFET N-CH 40V 100A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 4.25 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

IPD50N08S413ATMA1

Infineon Technologies

MOSFET N-CH TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 33µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1711pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 72W (Tc)
• Rds On (Max) @ Id, Vgs: 13.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

IPS65R950C6AKMA1

Infineon Technologies

MOSFET N-CH 650V 4.5A TO-251

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Stub Leads, IPak

paquet: TO-251-3 Stub Leads, IPak

IPB026N06NATMA1

Infineon Technologies

MOSFET N-CH 60V 25A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 75µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 136W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFSL3207ZPBF

Infineon Technologies

MOSFET N-CH 75V 120A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6920pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

IPB80N03S4L03ATMA1

Infineon Technologies

MOSFET N-CH 30V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 45µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLS4030TRL7PP

Infineon Technologies

MOSFET N-CH 100V 190A D2PAK-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 110A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

paquet: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

BSC090N03LSGATMA1

Infineon Technologies

MOSFET N-CH 30V 48A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

paquet: 8-PowerTDFN

IRFR4620PBF

Infineon Technologies

MOSFET N-CH 200V 24A D-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFS7430TRL7PP

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13975pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

paquet: TO-263-7, D2Pak (6 Leads + Tab)

PTF141501E V1

Infineon Technologies

IC FET RF LDMOS 150W H-30260-2

• Transistor Type: LDMOS
• Frequency: 1.5GHz
• Gain: 16.5dB
• Voltage - Test: 28V
• Current Rating: 1µA
• Noise Figure: -
• Current - Test: 1.5A
• Power - Output: 150W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads
• Supplier Device Package: H-30260-2

paquet: 2-Flatpack, Fin Leads

BSO612CVGHUMA1

Infineon Technologies

MOSFET N/P-CH 60V 2A 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3A, 2A
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 4V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

paquet: 8-SOIC (0.154", 3.90mm Width)

BCX52H6327XTSA1

Infineon Technologies

TRANSISTOR AF SOT89-4

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 125MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

paquet: TO-243AA

BFS 17P E6433

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.4GHz
• Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
• Gain: -
• Power - Max: 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

paquet: TO-236-3, SC-59, SOT-23-3

IDH10S60CAKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 140µA @ 600V
• Capacitance @ Vr, F: 480pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-2

BAT240AE6433HTMA1

Infineon Technologies

DIODE ARRAY SCHOTTKY 240V SOT23

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 240V
• Current - Average Rectified (Io) (per Diode): 400mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 400mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

paquet: TO-236-3, SC-59, SOT-23-3

IDW20C65D2XKSA1

Infineon Technologies

DIODE 650V 20A RAPID2 TO247-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 40µA @ 650V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

paquet: TO-247-3

IRMCK099M

Infineon Technologies

IC MOTOR CTLR I2C/SPI 32QFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: I2C, RS-232
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Appliance
• Current - Output: -
• Voltage - Supply: 3V ~ 3.6V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-QFN

paquet: 32-WFQFN Exposed Pad

IR2304

Infineon Technologies

IC DRIVER HALF-BRIDGE 8-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.3V
• Current - Peak Output (Source, Sink): 60mA, 130mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 200ns, 100ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

paquet: 8-DIP (0.300", 7.62mm)

1ED020I12FA2XUMA2

Infineon Technologies

IC IGBT DVR 1200V 2A DSO20

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT
• Voltage - Supply: 13 V ~ 20 V
• Logic Voltage - VIL, VIH: 1.5V, 3.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 30ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO 20

paquet: 20-SOIC (0.295", 7.50mm Width)

IR3550MTRPBF

Infineon Technologies

IC DRIVER GATE 60A PQFN

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters, Voltage Regulators
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 60A
• Current - Peak Output: 90A
• Voltage - Supply: 4.5 V ~ 7 V
• Voltage - Load: 4.5 V ~ 15 V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation, Status Flag
• Fault Protection: Over Temperature, Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: 32-PowerVFQFN
• Supplier Device Package: 32-PQFN (6x6)

paquet: 32-PowerVFQFN

ICE3B3565I

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP TO220

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 15V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
• Duty Cycle: 72%
• Frequency - Switching: 67kHz
• Power (Watts): 170W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: TO-220-6 Formed Leads
• Supplier Device Package: PG-TO220-6
• Mounting Type: Through Hole

paquet: TO-220-6 Formed Leads

ICE2A180Z

Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Flyback
• Voltage - Start Up: 13.5V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
• Duty Cycle: 72%
• Frequency - Switching: 100kHz
• Power (Watts): 29W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7-1
• Mounting Type: Through Hole

paquet: 8-DIP (0.300", 7.62mm), 7 Leads

PEB 3324 HL V1.4

Infineon Technologies

IC CODEC VOIP LQFP-176

• Function: Analog Voice Access
• Interface: ADPCM
• Number of Circuits: 4
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): 400mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP
• Supplier Device Package: PG-LQFP-176

paquet: 176-LQFP

SAK-XC888-8FFI 5V AC

Infineon Technologies

IC MCU 8BIT 32KB FLASH 64TQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 48
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1.75K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

paquet: 64-LQFP

XMC4800E196F2048AAXQMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 196FBGA

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 144MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
• Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
• Number of I/O: 155
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 352K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 32x12b, D/A 2x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 196-LFBGA
• Supplier Device Package: PG-LFBGA-196-2

paquet: 196-LFBGA

TLE4905GNTSA1

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SOT89-3

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 18mT Trip, 5mT Release
• Test Condition: 25°C
• Voltage - Supply: 4 V ~ 18 V
• Current - Supply (Max): 5mA
• Current - Output (Max): 100mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

paquet: TO-243AA