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Infineon Technologies |
MOSFET N-CH 500V 4.3A PG-TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 25.7W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220FP
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock114 960 |
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Infineon Technologies |
MOSFET N-CH 55V 150A TO263CA-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-263CA-7
- Package / Case: TO-263-7 (Straight Leads)
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paquet: TO-263-7 (Straight Leads) |
Stock2 704 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 55µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 144 |
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Infineon Technologies |
MOSFET N-CH 55V 77A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 55µA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5335pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 39A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock115 464 |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3 168 |
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Infineon Technologies |
MOSFET N-CH 55V 28A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5 648 |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6 320 |
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Infineon Technologies |
MOSFET N-CH 650V 21A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6 480 |
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Infineon Technologies |
MOSFET N-CHANNEL_100+
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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paquet: - |
Stock7 104 |
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Infineon Technologies |
MOSFET N-CH 20V 100A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock16 068 |
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Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock10 596 |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 470µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock7 248 |
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Infineon Technologies |
MOSFET P-CH 30V 80A TO220-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
- Vgs (Max): +5V, -16V
- FET Feature: -
- Power Dissipation (Max): 137W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock22 188 |
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Infineon Technologies |
MOSFET N-CH 120V 44A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 42µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 60V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 39A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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paquet: 8-PowerTDFN |
Stock156 930 |
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Infineon Technologies |
FET RF LDMOS 240W H33288-2
- Transistor Type: LDMOS
- Frequency: 765MHz
- Gain: 19dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.8A
- Power - Output: 220W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-33288-2
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paquet: 2-Flatpack, Fin Leads |
Stock5 696 |
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Infineon Technologies |
TRANS PREBIAS PNP 250MW SC75
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
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paquet: SC-75, SOT-416 |
Stock4 912 |
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Infineon Technologies |
TRANSISTOR RF NPN AMP SOT-343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.25V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
- Gain: 13.5dB ~ 24.5dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
- Current - Collector (Ic) (Max): 55mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
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paquet: SC-82A, SOT-343 |
Stock4 064 |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: 300pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-220-2 |
Stock30 096 |
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Infineon Technologies |
IC REG CTRLR BUCK/BOOST 8SOIC
- Output Type: Transistor Driver
- Function: Step-Up, Step-Down
- Output Configuration: Positive
- Topology: Buck, Boost
- Number of Outputs: 1
- Output Phases: 1
- Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
- Frequency - Switching: 200kHz
- Duty Cycle (Max): 90%
- Synchronous Rectifier: Yes
- Clock Sync: No
- Serial Interfaces: -
- Control Features: Enable, Soft Start
- Operating Temperature: 0°C ~ 70°C (TA)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock306 252 |
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Infineon Technologies |
MC RELAY + LED
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 8
- Ratio - Input:Output: 1:8
- Output Configuration: High Side or Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 3 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Current - Output (Max): 330mA
- Rds On (Typ): 1 Ohm
- Input Type: -
- Features: -
- Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-SSOP-24-9
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paquet: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad |
Stock5 408 |
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Infineon Technologies |
IC MOTOR DRIVER SPI 20DSO
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: SPI
- Technology: Power MOSFET
- Step Resolution: -
- Applications: Automotive
- Current - Output: 8.6A
- Voltage - Supply: 4.4 V ~ 5.25 V
- Voltage - Load: 4.5 V ~ 28 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-20-65
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paquet: 20-SOIC (0.433", 11.00mm Width) Exposed Pad |
Stock6 080 |
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Infineon Technologies |
IC BALLAST CTRL DIM 600V 8-SOIC
- Type: Ballast Controller
- Frequency: 34.2kHz ~ 115kHz
- Voltage - Supply: 11.5 V ~ 16.6 V
- Current - Supply: 5mA
- Current - Output Source/Sink: -
- Dimming: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock3 008 |
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Infineon Technologies |
IC DVR HI/LOW SIDE 600V 20SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 500mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 25ns, 15ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOIC
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paquet: 20-SOIC (0.295", 7.50mm Width) |
Stock46 416 |
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Infineon Technologies |
IC OFFLINE CTRLR SMPS CM 8DIP
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 15V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 100kHz
- Power (Watts): 22W
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
- Mounting Type: Through Hole
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paquet: 8-DIP (0.300", 7.62mm) |
Stock7 264 |
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Infineon Technologies |
IC LINE INTERFACE SLIC PDSO24-8
- Function: Subscriber Line Interface Concept (SLIC)
- Interface: -
- Number of Circuits: 1
- Voltage - Supply: 5V
- Current - Supply: 2.8mA
- Power (Watts): 290mW
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 24-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-24
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paquet: 24-SOIC (0.295", 7.50mm Width) |
Stock5 712 |
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Infineon Technologies |
IC SWITCH ETHER 5PORT 128-FQFP
- Protocol: Ethernet
- Function: Switch
- Interface: Parallel
- Standards: 10/100 Base-T/TX PHY
- Voltage - Supply: 2.8 V ~ 3.465 V
- Current - Supply: -
- Operating Temperature: 0°C ~ 115°C
- Package / Case: 128-BFQFP
- Supplier Device Package: PG-BFQFP-128
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paquet: 128-BFQFP |
Stock17 532 |
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Infineon Technologies |
SECURITY IC'S/AUTHENTICATION IC'
- Applications: Embedded Security Trusted Computing
- Core Processor: 16-Bit
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: LPC
- Number of I/O: 1
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-32-13
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paquet: 32-VFQFN Exposed Pad |
Stock7 712 |
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Infineon Technologies |
TXRX SGL MODE 1300NM 1.3GBIT
- Data Rate: 1.3Gbps
- Wavelength: 1300nm
- Applications: Ethernet
- Voltage - Supply: 4.75 V ~ 5.25 V
- Connector Type: SC
- Mounting Type: Through Hole
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paquet: - |
Stock3 168 |
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Infineon Technologies |
IC TIRE PRESSURE SENSOR PDSO-14
- Sensor Type: -
- Output Type: -
- Operating Temperature: -
|
paquet: - |
Stock3 402 |
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Infineon Technologies |
IC AMP LNA SIGE GPS TSLP-7
- Frequency: 1.55GHz ~ 1.615GHz
- P1dB: -5dBm
- Gain: 16dB
- Noise Figure: 0.75dB
- RF Type: GPS
- Voltage - Supply: 1.5 V ~ 3.6 V
- Current - Supply: 4.4mA
- Test Frequency: 1.575GHz
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: TSLP-7-1
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paquet: 6-XFDFN Exposed Pad |
Stock2 826 |
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