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Infineon Technologies |
IGBT 1350V 40A 310W TO247HC-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1350V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
- Power - Max: 310W
- Switching Energy: 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 195nC
- Td (on/off) @ 25°C: -/335ns
- Test Condition: 600V, 20A, 15 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PG-TO247HC-3
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paquet: TO-247-3 Variant |
Stock5 744 |
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Infineon Technologies |
IGBT 1200V 60A 300W TO247AD
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
- Power - Max: 300W
- Switching Energy: 1.07mJ (on), 1.49mJ (off)
- Input Type: Standard
- Gate Charge: 169nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 25A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 300ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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paquet: TO-247-3 |
Stock16 272 |
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Infineon Technologies |
MOSFET N-CH 40V 31A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5469pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 94A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L6
- Package / Case: DirectFET? Isometric L6
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paquet: DirectFET? Isometric L6 |
Stock3 104 |
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Infineon Technologies |
MOSFET N-CH 25V 57A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock54 000 |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock51 600 |
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Infineon Technologies |
MOSFET N-CH 40V 100A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock85 920 |
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Infineon Technologies |
MOSFET N-CH 20V 27A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4130pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 27A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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paquet: DirectFET? Isometric MX |
Stock12 204 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MT
- Package / Case: DirectFET? Isometric MT
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paquet: DirectFET? Isometric MT |
Stock46 644 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6 464 |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock600 084 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6 912 |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock7 840 |
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Infineon Technologies |
MOSFET N-CH 600V 23.8A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock46 812 |
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Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock15 000 588 |
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Infineon Technologies |
MOSFET N-CH 8V 40MA SOT-343
- Transistor Type: N-Channel
- Frequency: 800MHz
- Gain: 23dB
- Voltage - Test: 5V
- Current Rating: 40mA
- Noise Figure: 1.5dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 8V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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paquet: SC-82A, SOT-343 |
Stock3 696 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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paquet: 8-PowerVDFN |
Stock7 744 |
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Infineon Technologies |
TRANSISTOR RF NPN 12V TSLP-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 12.5dB ~ 19dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
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paquet: SC-101, SOT-883 |
Stock144 198 |
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Infineon Technologies |
DIODE TUNING 30V 20MA SCD80
- Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
- Capacitance Ratio: 23.2
- Capacitance Ratio Condition: C1/C28
- Voltage - Peak Reverse (Max): 30V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-80
- Supplier Device Package: SCD-80
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paquet: SC-80 |
Stock7 024 |
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Infineon Technologies |
LINEAR VOLTAGE REGULATOR
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 42V
- Voltage - Output (Min/Fixed): 1.2V
- Voltage - Output (Max): 20V
- Voltage Dropout (Max): 0.5V @ 70mA
- Current - Output: 70mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 36µA
- PSRR: 60dB (100Hz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock3 408 |
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Infineon Technologies |
IC REG CTRLR BCK/HALF-BRG 14SOIC
- Output Type: Transistor Driver
- Function: Step-Down, Step-Up/Step-Down
- Output Configuration: Positive, Isolation Capable
- Topology: Buck, Half-Bridge
- Number of Outputs: 2
- Output Phases: 2
- Voltage - Supply (Vcc/Vdd): 12 V ~ 18 V
- Frequency - Switching: Up to 500kHz
- Duty Cycle (Max): 50%
- Synchronous Rectifier: Yes
- Clock Sync: No
- Serial Interfaces: -
- Control Features: Enable, Frequency Control
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock4 240 |
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Infineon Technologies |
IC MOTOR DRIVER PAR TO220-7
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: -
- Applications: Automotive
- Current - Output: 5A
- Voltage - Supply: 5.3 V ~ 40 V
- Voltage - Load: 5.3 V ~ 40 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-7 (Formed Leads)
- Supplier Device Package: P-TO220-7
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paquet: TO-220-7 (Formed Leads) |
Stock6 768 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock34 848 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock383 868 |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 11.2 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 2.3A, 3.3A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock2 848 |
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Infineon Technologies |
IC DVR HALF BRIDGE 14-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
|
paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock49 872 |
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Infineon Technologies |
IC TXRX CAN STD HS 3.3V 8DSO
- Type: Transceiver
- Protocol: CAN
- Number of Drivers/Receivers: 1/1
- Duplex: Half
- Receiver Hysteresis: 150mV
- Data Rate: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock88 224 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 144MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 25MHz
- Connectivity: CAN, EBI/EMI, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 111
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: External
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 144-BQFP
- Supplier Device Package: PG-MQFP-144
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paquet: 144-BQFP |
Stock6 736 |
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Infineon Technologies |
IC MOTOR DRIVER 48VQFN
- Applications: Automotive
- Core Processor: XC800
- Program Memory Type: FLASH (36 kB)
- Controller Series: -
- RAM Size: 3.25K x 8
- Interface: LIN, SSI, UART
- Number of I/O: 11
- Voltage - Supply: 3 V ~ 27 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-31
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paquet: 48-VFQFN Exposed Pad |
Stock4 976 |
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Infineon Technologies |
OPTOISO 2.5KV 2CH PHVOLT 8-SMT
- Number of Channels: 2
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): -
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Photovoltaic
- Voltage - Output (Max): 5V
- Current - Output / Channel: 5µA
- Voltage - Forward (Vf) (Typ): -
- Current - DC Forward (If) (Max): -
- Vce Saturation (Max): -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-SMD (4 Leads), Gull Wing
- Supplier Device Package: 8-SMD
|
paquet: 8-SMD (4 Leads), Gull Wing |
Stock15 960 |
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Infineon Technologies |
IC SWITCH HISIDE 8CH DSO-36
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 8
- Ratio - Input:Output: 1:8
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 11 V ~ 35 V
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Current - Output (Max): 625mA
- Rds On (Typ): 150 mOhm
- Input Type: -
- Features: Auto Restart, Galvanic Isolation, Status Flag
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -25°C ~ 125°C (TJ)
- Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36
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paquet: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad |
Stock5 568 |
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