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Infineon Technologies |
IGBT 1200V 60A 300W TO247AC
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
- Power - Max: 300W
- Switching Energy: 1.07mJ (on), 1.49mJ (off)
- Input Type: Standard
- Gate Charge: 169nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 25A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 300ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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paquet: TO-247-3 |
Stock6 800 |
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Infineon Technologies |
MOSFET N-CH 150V 375A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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paquet: DirectFET? Isometric L8 |
Stock4 960 |
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Infineon Technologies |
MOSFET N-CH 100V 80A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4 768 |
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Infineon Technologies |
MOSFET N-CH 40V 10A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock288 000 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5 264 |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock6 720 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5 424 |
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Infineon Technologies |
MOSFET N-CH 500V 7.6A PG-TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock7 320 |
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Infineon Technologies |
MOSFET N-CH 30V 17.2A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock1 893 708 |
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Infineon Technologies |
MOSFET NCH 600V 3.7A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 5W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 800mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: SOT-223-3
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paquet: SOT-223-3 |
Stock2 080 |
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Infineon Technologies |
MOSFET 2N-CH 30V 20A 8WISON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
- Power - Max: 17W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-WISON-8
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paquet: 8-PowerVDFN |
Stock46 122 |
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Infineon Technologies |
TRANS NPN 45V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock3 664 |
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Infineon Technologies |
TRANS 2NPN 40V 0.2A SOT363
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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paquet: 6-VSSOP, SC-88, SOT-363 |
Stock4 352 |
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Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT343
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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paquet: SC-82A, SOT-343 |
Stock4 128 |
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Infineon Technologies |
IC REG LINEAR POS ADJ 1A 8SOIC
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 12V
- Voltage - Output (Min/Fixed): 1.24V
- Voltage - Output (Max): 11.35V
- Voltage Dropout (Max): 0.65V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 3mA ~ 50mA
- PSRR: -
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock24 444 |
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Infineon Technologies |
IC REG LIN POS ADJ 800MA 10TSON
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 5.25V
- Voltage Dropout (Max): 1.2V @ 800mA
- Current - Output: 800mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 170µA ~ 250µA
- PSRR: 62dB (10kHz)
- Control Features: Enable, Reset
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 10-TFDFN Exposed Pad
- Supplier Device Package: PG-TSON-10
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paquet: 10-TFDFN Exposed Pad |
Stock6 400 |
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Infineon Technologies |
IC DVR HALF BRIDGE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock100 440 |
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Infineon Technologies |
.DP LITE COOLSET
- Output Isolation: -
- Internal Switch(s): -
- Voltage - Breakdown: -
- Topology: -
- Voltage - Start Up: -
- Voltage - Supply (Vcc/Vdd): -
- Duty Cycle: -
- Frequency - Switching: -
- Power (Watts): -
- Fault Protection: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
- Mounting Type: -
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paquet: - |
Stock4 560 |
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Infineon Technologies |
IC MCU 32BIT 8KB FLASH 24VQFN
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 18
- Program Memory Size: 8KB (8K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 8x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: PG-TSSOP-16-8
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paquet: 16-TSSOP (0.173", 4.40mm Width) |
Stock6 336 |
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Infineon Technologies |
MAGNETIC SWITCH LATCH SOT23-3
- Function: Latch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 7.5mT Trip, -7.5mT Release
- Test Condition: 25°C
- Voltage - Supply: 3 V ~ 26 V
- Current - Supply (Max): 2.5mA
- Current - Output (Max): 25mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: SOT-223-3
- Supplier Device Package: PG-SOT23-3-15
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paquet: SOT-223-3 |
Stock8 748 |
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Infineon Technologies |
DGTL ISO 500V I2C/SPI 48TSSOP
- Technology: Magnetic Coupling
- Type: I2C, SPI
- Isolated Power: No
- Number of Channels: 8
- Inputs - Side 1/Side 2: 8/0
- Channel Type: Unidirectional
- Voltage - Isolation: 500VAC
- Common Mode Transient Immunity (Min): 25kV/µs
- Data Rate: -
- Propagation Delay tpLH / tpHL (Max): -
- Pulse Width Distortion (Max): -
- Rise / Fall Time (Typ): -
- Voltage - Supply: 2.85 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 48-TFSOP (0.240", 6.10mm Width)
- Supplier Device Package: 48-TSSOP
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paquet: 48-TFSOP (0.240", 6.10mm Width) |
Stock15 708 |
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Infineon Technologies |
MOSFET_(75V 120V(
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
FZ1200R17 - INSULATED GATE BIPOL
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
PROFET PG-TSDSO-14
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6V ~ 18V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 12.5A
- Rds On (Typ): 6.6mOhm
- Input Type: Non-Inverting
- Features: Slew Rate Controlled
- Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TDSO-14-11
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paquet: - |
Stock17 370 |
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Infineon Technologies |
TELEPHONY INTERFACE CIRCUIT
- Function: -
- Interface: -
- Number of Circuits: -
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
BIPOLAR DIGITAL TRANSISTOR
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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paquet: - |
Request a Quote |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 128KB FLSH 124VFBGA
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit Single-Core
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
- Number of I/O: 98
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 124-VFBGA
- Supplier Device Package: 124-VFBGA (9x9)
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paquet: - |
Stock3 900 |
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Infineon Technologies |
DUSLIC DUAL CHANNEL SLIC
- Function: -
- Interface: -
- Number of Circuits: -
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE 600V 75A 250W
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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paquet: - |
Request a Quote |
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