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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot MT47H256M8EB-3:C
Micron Technology Inc.

IC SDRAM 2GBIT 333MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (9x11.5)
paquet: 60-TFBGA
Stock12 996
DRAM
SDRAM - DDR2
2Gb (256M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-FBGA (9x11.5)
MT52L256M64D2PD-107 WT ES:B TR
Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 16Gb (256M x 64)
  • Memory Interface: -
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock6 896
DRAM
SDRAM - Mobile LPDDR3
16Gb (256M x 64)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
MT29C4G96MAYAPCMJ-5 IT
Micron Technology Inc.

IC FLASH/LPDRAM 8GBIT 200MHZ BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 4Gb (512M x 8)(NAND), 4Gb (128M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock6 912
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
4Gb (512M x 8)(NAND), 4Gb (128M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
-
-
-
hot MT41J128M8JP-15E:G
Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x11.5)
paquet: 78-TFBGA
Stock171 804
DRAM
SDRAM - DDR3
1Gb (128M x 8)
Parallel
667MHz
-
-
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x11.5)
IDT71V416L10BEGI
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 48CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-CABGA (9x9)
paquet: 48-TFBGA
Stock7 520
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-CABGA (9x9)
IDT71T75602S166PFI
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
paquet: 100-LQFP
Stock3 296
SRAM
SRAM - Synchronous ZBT
18Mb (512K x 36)
Parallel
166MHz
-
3.5ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT45W1MW16BDGB-708 AT TR
Micron Technology Inc.

IC PSRAM 16MBIT 70NS 54VFBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (6x8)
paquet: 54-VFBGA
Stock7 472
PSRAM
PSRAM (Pseudo SRAM)
16Mb (1M x 16)
Parallel
-
70ns
70ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TC)
Surface Mount
54-VFBGA
54-VFBGA (6x8)
MT48LC8M32B2F5-7 IT
Micron Technology Inc.

IC SDRAM 256MBIT 143MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 6ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
paquet: 90-VFBGA
Stock6 784
DRAM
SDRAM
256Mb (8M x 32)
Parallel
143MHz
14ns
6ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
DS1245W-150
Maxim Integrated

IC NVSRAM 1MBIT 150NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
paquet: 32-DIP Module (0.600", 15.24mm)
Stock5 040
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
AT28HC256F-90JC
Microchip Technology

IC EEPROM 256KBIT 90NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
paquet: 32-LCC (J-Lead)
Stock6 528
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
3ms
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
CY7C1440KV25-250BZXIT
Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.6ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
paquet: 165-LBGA
Stock7 984
SRAM
SRAM - Synchronous
36Mb (1M x 36)
Parallel
250MHz
-
2.6ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
7005L17PF
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 17NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 17ns
  • Access Time: 17ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
paquet: 64-LQFP
Stock5 504
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
17ns
17ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
709079S15PF8
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 15NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
paquet: 100-LQFP
Stock7 904
SRAM
SRAM - Dual Port, Synchronous
256Kb (32K x 8)
Parallel
-
-
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
71V65803S150BQI8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
paquet: 165-TBGA
Stock6 544
SRAM
SRAM - Synchronous ZBT
9Mb (512K x 18)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
IS64WV25616BLL-10CTLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
paquet: 44-TSOP (0.400", 10.16mm Width)
Stock3 440
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot MT41K128M16JT-107G:K
Micron Technology Inc.

IC SDRAM 2GBIT 933MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
paquet: 96-TFBGA
Stock7 104
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
IS43DR86400C-3DBL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 333MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TWBGA (10.5x8)
paquet: 60-TFBGA
Stock6 064
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TWBGA (10.5x8)
W631GU8KB-12 TR
Winbond Electronics

IC SDRAM 1GBIT 800MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-WBGA (10.5x8)
paquet: 78-TFBGA
Stock5 520
DRAM
SDRAM - DDR3L
1Gb (128M x 8)
Parallel
800MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-WBGA (10.5x8)
N25Q128A11ESF40F TR
Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (32M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP2
paquet: 16-SOIC (0.295", 7.50mm Width)
Stock6 048
FLASH
FLASH - NOR
128Mb (32M x 4)
SPI
108MHz
8ms, 5ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP2
71124S15YG8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 15NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
paquet: 32-BSOJ (0.400", 10.16mm Width)
Stock2 752
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
71V016SA12YG
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
paquet: 44-BSOJ (0.400", 10.16mm Width)
Stock6 272
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
AT25DF256-SSHNGU-T
Adesto Technologies

IC FLASH 256KBIT 85MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 8µs, 2.5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock7 152
FLASH
FLASH
256Kb (32K x 8)
SPI
104MHz
8µs, 2.5ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S-93C66BD0I-I8T1U
SII Semiconductor Corporation

IC EEPROM 4KBIT 2MHZ SNT8A

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 8ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SNT-8A
paquet: 8-SMD, Flat Lead
Stock6 896
EEPROM
EEPROM
4Kb (256 x 16)
SPI
2MHz
8ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SMD, Flat Lead
SNT-8A
AS4C256M16D3L-12BIN
Alliance Memory, Inc.

IC SDRAM 4GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (13x9)
paquet: 96-TFBGA
Stock6 336
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
800MHz
15ns
20ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (13x9)
AT27C040-90PU
Microchip Technology

IC OTP 4MBIT 90NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-DIP
paquet: 32-DIP (0.600", 15.24mm)
Stock14 172
EPROM
EPROM - OTP
4Mb (512K x 8)
Parallel
-
-
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Through Hole
32-DIP (0.600", 15.24mm)
32-DIP
93AA46C/WF15K
Microchip Technology

IC EEPROM 1K SPI 3MHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8 , 64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: Die
Stock2 208
EEPROM
EEPROM
1Kb (128 x 8 , 64 x 16)
SPI
3MHz
6ms
-
1.8 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
Die
Die
S29GL064N90FAI020
Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
paquet: 64-LBGA
Stock5 856
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
S25FL127SABNFB103
Cypress Semiconductor Corp

IC FLASH 128M SPI 108MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
paquet: 8-WDFN Exposed Pad
Stock6 336
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O
108MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)
AS7C31026C-12BIN
Alliance Memory, Inc.

IC SRAM 1M PARALLEL 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-BGA (7x7)
paquet: 48-LFBGA
Stock7 264
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-BGA (7x7)
S29AL016J55FFA023
Cypress Semiconductor Corp

IC FLASH 16M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8, 1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
paquet: 64-LBGA
Stock6 320
FLASH
FLASH - NOR
16Mb (2M x 8, 1M x 16)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (9x9)