Page 2 - Produits Microsemi Corporation - Transistors - Bipolaires (BJT) - Matrices

Référence	Fabricant	Description	paquet	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JAN2N3810	Microsemi Corporation	TRANS 2PNP 60V 0.05A TO78 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock7 728	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
SG2823J-DESC	Microsemi Corporation	TRANS 8NPN DARL 95V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 95V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 18-CDIP	paquet: -	Stock2 304	500mA	95V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Through Hole	-	18-CDIP
SG2823J-883B	Microsemi Corporation	TRANS 8NPN DARL 95V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 95V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 18-CDIP	paquet: -	Stock3 488	500mA	95V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Through Hole	-	18-CDIP
SG2823J	Microsemi Corporation	TRANS 8NPN DARL 95V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 95V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 18-CDIP	paquet: -	Stock14 664	500mA	95V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Through Hole	-	18-CDIP
SG2803J-DESC	Microsemi Corporation	TRANS 8NPN DARL 50V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 18-CDIP	paquet: -	Stock3 200	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	-55°C ~ 125°C (TA)	Through Hole	-	18-CDIP
SG2803J-883B	Microsemi Corporation	TRANS 8NPN DARL 50V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 18-CDIP	paquet: -	Stock4 144	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	-55°C ~ 125°C (TA)	Through Hole	-	18-CDIP
SG2023J-DESC	Microsemi Corporation	TRANS 7NPN DARL 95V 0.5A 16DIP Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 95V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-CDIP (0.300", 7.62mm) Supplier Device Package: 16-CDIP	paquet: 16-CDIP (0.300", 7.62mm)	Stock6 720	500mA	95V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Through Hole	16-CDIP (0.300", 7.62mm)	16-CDIP
SG2003J-JAN	Microsemi Corporation	TRANS 7NPN DARL 50V 0.5A 16DIP Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-CDIP (0.300", 7.62mm) Supplier Device Package: 16-CDIP	paquet: 16-CDIP (0.300", 7.62mm)	Stock5 040	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Through Hole	16-CDIP (0.300", 7.62mm)	16-CDIP
SG2003J-883B	Microsemi Corporation	TRANS 7NPN DARL 50V 0.5A 16DIP Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-CDIP (0.300", 7.62mm) Supplier Device Package: 16-CDIP	paquet: 16-CDIP (0.300", 7.62mm)	Stock6 656	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Through Hole	16-CDIP (0.300", 7.62mm)	16-CDIP
SG2003J	Microsemi Corporation	TRANS 7NPN DARL 50V 0.5A 16DIP Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-CDIP (0.300", 7.62mm) Supplier Device Package: 16-CDIP	paquet: 16-CDIP (0.300", 7.62mm)	Stock75 336	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Through Hole	16-CDIP (0.300", 7.62mm)	16-CDIP
JANTXV2N2060L	Microsemi Corporation	TRANS 2NPN 60V 0.5A TO78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 2.12W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock2 976	500mA	60V	300mV @ 5mA, 50mA	10µA (ICBO)	50 @ 10mA, 5V	2.12W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N2060L	Microsemi Corporation	TRANS 2NPN 60V 0.5A TO78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 2.12W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock3 376	500mA	60V	300mV @ 5mA, 50mA	10µA (ICBO)	50 @ 10mA, 5V	2.12W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N2919U	Microsemi Corporation	TRANS 2NPN 60V 0.03A Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	paquet: 3-SMD, No Lead	Stock5 648	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Surface Mount	3-SMD, No Lead	3-SMD
JANTXV2N6990	Microsemi Corporation	TRANS 4NPN 50V 0.8A 14PIN Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 14-Flatpack Supplier Device Package: 14-Flatpack	paquet: 14-Flatpack	Stock4 432	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	Surface Mount	14-Flatpack	14-Flatpack
JANTX2N2919U	Microsemi Corporation	TRANS 2NPN 60V 0.03A Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	paquet: 3-SMD, No Lead	Stock3 328	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Surface Mount	3-SMD, No Lead	3-SMD
JANTXV2N6989	Microsemi Corporation	TRANS 4NPN 50V 0.8A TO116 Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	paquet: 14-DIP (0.300", 7.62mm)	Stock7 072	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
JANTXV2N6988	Microsemi Corporation	TRANS 4PNP 60V 0.6A Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 14-Flatpack Supplier Device Package: 14-Flatpack	paquet: 14-Flatpack	Stock4 576	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	Surface Mount	14-Flatpack	14-Flatpack
JANTXV2N6987	Microsemi Corporation	TRANS 4PNP 60V 0.6A TO116 Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: -	paquet: 14-DIP (0.300", 7.62mm)	Stock5 296	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	-
JANTX2N6987	Microsemi Corporation	TRANS 4PNP 60V 0.6A TO116 Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: -	paquet: 14-DIP (0.300", 7.62mm)	Stock6 256	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	-
JAN2N2060L	Microsemi Corporation	TRANS 2NPN 60V 0.5A TO78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 2.12W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock3 760	500mA	60V	300mV @ 5mA, 50mA	10µA (ICBO)	50 @ 10mA, 5V	2.12W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N6989	Microsemi Corporation	TRANS 4NPN 50V 0.8A TO116 Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	paquet: 14-DIP (0.300", 7.62mm)	Stock5 712	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
JANTXV2N3810U	Microsemi Corporation	TRANS 2PNP 60V 0.05A Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock2 640	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JAN2N6987	Microsemi Corporation	TRANS 4PNP 60V 0.6A TO116 Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: -	paquet: 14-DIP (0.300", 7.62mm)	Stock3 568	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	-
JANTXV2N2920L	Microsemi Corporation	TRANS 2NPN 60V 0.03A TO78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock3 504	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N2919L	Microsemi Corporation	TRANS 2NPN 60V 0.03A TO78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock6 016	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N2919	Microsemi Corporation	TRANS 2NPN 60V 0.03A TO78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock2 176	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N2919L	Microsemi Corporation	TRANS 2NPN 60V 0.03A TO78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock7 376	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JAN2N2920U	Microsemi Corporation	TRANS 2NPN 60V 0.03A Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	paquet: 3-SMD, No Lead	Stock3 760	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	Surface Mount	3-SMD, No Lead	3-SMD
JAN2N2919U	Microsemi Corporation	TRANS 2NPN 60V 0.03A Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	paquet: 3-SMD, No Lead	Stock6 288	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Surface Mount	3-SMD, No Lead	3-SMD
JANTX2N3810U	Microsemi Corporation	TRANS 2PNP 60V 0.05A Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	paquet: TO-78-6 Metal Can	Stock6 064	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6

JAN2N3810

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock7 728

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

SG2823J-DESC

Microsemi Corporation

TRANS 8NPN DARL 95V 0.5A 18DIP

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 95V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 18-CDIP

paquet: -

Stock2 304

500mA

95V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Through Hole

-

18-CDIP

SG2823J-883B

Microsemi Corporation

TRANS 8NPN DARL 95V 0.5A 18DIP

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 95V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 18-CDIP

paquet: -

Stock3 488

500mA

95V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Through Hole

-

18-CDIP

SG2823J

Microsemi Corporation

TRANS 8NPN DARL 95V 0.5A 18DIP

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 95V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 18-CDIP

paquet: -

Stock14 664

500mA

95V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Through Hole

-

18-CDIP

SG2803J-DESC

Microsemi Corporation

TRANS 8NPN DARL 50V 0.5A 18DIP

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 18-CDIP

paquet: -

Stock3 200

500mA

50V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

-55°C ~ 125°C (TA)

Through Hole

-

18-CDIP

SG2803J-883B

Microsemi Corporation

TRANS 8NPN DARL 50V 0.5A 18DIP

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 18-CDIP

paquet: -

Stock4 144

500mA

50V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

-55°C ~ 125°C (TA)

Through Hole

-

18-CDIP

SG2023J-DESC

Microsemi Corporation

TRANS 7NPN DARL 95V 0.5A 16DIP

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 95V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Supplier Device Package: 16-CDIP

paquet: 16-CDIP (0.300", 7.62mm)

Stock6 720

500mA

95V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Through Hole

16-CDIP (0.300", 7.62mm)

16-CDIP

SG2003J-JAN

Microsemi Corporation

TRANS 7NPN DARL 50V 0.5A 16DIP

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Supplier Device Package: 16-CDIP

paquet: 16-CDIP (0.300", 7.62mm)

Stock5 040

500mA

50V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Through Hole

16-CDIP (0.300", 7.62mm)

16-CDIP

SG2003J-883B

Microsemi Corporation

TRANS 7NPN DARL 50V 0.5A 16DIP

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Supplier Device Package: 16-CDIP

paquet: 16-CDIP (0.300", 7.62mm)

Stock6 656

500mA

50V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Through Hole

16-CDIP (0.300", 7.62mm)

16-CDIP

SG2003J

Microsemi Corporation

TRANS 7NPN DARL 50V 0.5A 16DIP

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Supplier Device Package: 16-CDIP

paquet: 16-CDIP (0.300", 7.62mm)

Stock75 336

500mA

50V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Through Hole

16-CDIP (0.300", 7.62mm)

16-CDIP

JANTXV2N2060L

Microsemi Corporation

TRANS 2NPN 60V 0.5A TO78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 2.12W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock2 976

500mA

60V

300mV @ 5mA, 50mA

10µA (ICBO)

50 @ 10mA, 5V

2.12W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JANTX2N2060L

Microsemi Corporation

TRANS 2NPN 60V 0.5A TO78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 2.12W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock3 376

500mA

60V

300mV @ 5mA, 50mA

10µA (ICBO)

50 @ 10mA, 5V

2.12W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JANTXV2N2919U

Microsemi Corporation

TRANS 2NPN 60V 0.03A

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD

paquet: 3-SMD, No Lead

Stock5 648

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

200°C (TJ)

Surface Mount

3-SMD, No Lead

3-SMD

JANTXV2N6990

Microsemi Corporation

TRANS 4NPN 50V 0.8A 14PIN

Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Supplier Device Package: 14-Flatpack

paquet: 14-Flatpack

Stock4 432

800mA

50V

1V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

400mW

-

-65°C ~ 200°C (TJ)

Surface Mount

14-Flatpack

JANTX2N2919U

Microsemi Corporation

TRANS 2NPN 60V 0.03A

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD

paquet: 3-SMD, No Lead

Stock3 328

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

200°C (TJ)

Surface Mount

3-SMD, No Lead

3-SMD

JANTXV2N6989

Microsemi Corporation

TRANS 4NPN 50V 0.8A TO116

Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116

paquet: 14-DIP (0.300", 7.62mm)

Stock7 072

800mA

50V

1V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

1.5W

-

-65°C ~ 200°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

TO-116

JANTXV2N6988

Microsemi Corporation

TRANS 4PNP 60V 0.6A

Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Supplier Device Package: 14-Flatpack

paquet: 14-Flatpack

Stock4 576

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

400mW

-

-65°C ~ 200°C (TJ)

Surface Mount

14-Flatpack

JANTXV2N6987

Microsemi Corporation

TRANS 4PNP 60V 0.6A TO116

Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: -

paquet: 14-DIP (0.300", 7.62mm)

Stock5 296

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

1.5W

-

-65°C ~ 200°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

-

JANTX2N6987

Microsemi Corporation

TRANS 4PNP 60V 0.6A TO116

Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: -

paquet: 14-DIP (0.300", 7.62mm)

Stock6 256

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

1.5W

-

-65°C ~ 200°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

-

JAN2N2060L

Microsemi Corporation

TRANS 2NPN 60V 0.5A TO78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 2.12W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock3 760

500mA

60V

300mV @ 5mA, 50mA

10µA (ICBO)

50 @ 10mA, 5V

2.12W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JANTX2N6989

Microsemi Corporation

TRANS 4NPN 50V 0.8A TO116

Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116

paquet: 14-DIP (0.300", 7.62mm)

Stock5 712

800mA

50V

1V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

1.5W

-

-65°C ~ 200°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

TO-116

JANTXV2N3810U

Microsemi Corporation

TRANS 2PNP 60V 0.05A

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock2 640

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JAN2N6987

Microsemi Corporation

TRANS 4PNP 60V 0.6A TO116

Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: -

paquet: 14-DIP (0.300", 7.62mm)

Stock3 568

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

1.5W

-

-65°C ~ 200°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

-

JANTXV2N2920L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock3 504

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

300 @ 1mA, 5V

350mW

-

200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JANTXV2N2919L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock6 016

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JANTXV2N2919

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock2 176

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JANTX2N2919L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock7 376

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JAN2N2920U

Microsemi Corporation

TRANS 2NPN 60V 0.03A

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD

paquet: 3-SMD, No Lead

Stock3 760

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

300 @ 1mA, 5V

350mW

-

200°C (TJ)

Surface Mount

3-SMD, No Lead

3-SMD

JAN2N2919U

Microsemi Corporation

TRANS 2NPN 60V 0.03A

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD

paquet: 3-SMD, No Lead

Stock6 288

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

200°C (TJ)

Surface Mount

3-SMD, No Lead

3-SMD

JANTX2N3810U

Microsemi Corporation

TRANS 2PNP 60V 0.05A

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

paquet: TO-78-6 Metal Can

Stock6 064

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6