Page 2 - Produits Microsemi Corporation - Transistors - Bipolaires (BJT) - RF

Référence	Fabricant	Description	paquet	Stock	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
1014-6A	Microsemi Corporation	TRANS RF BIPO 19W 1A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 7.5dB Power - Max: 19W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	paquet: 55LV	Stock3 856	50V	1GHz ~ 1.4GHz	-	7dB ~ 7.5dB	19W	-	1A	200°C (TJ)	Chassis Mount	55LV	55LV
MS1509	Microsemi Corporation	TRANS RF BIPO 260W 15A M168 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 5.5dBi Power - Max: 260W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M168 Supplier Device Package: M168	paquet: M168	Stock4 848	33V	500MHz	-	5.5dBi	260W	20 @ 1mA, 5V	15A	200°C (TJ)	Chassis Mount	M168	M168
0912-45	Microsemi Corporation	TRANS RF BIPO 225W 4.5A 55CT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9dB Power - Max: 225W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CT Supplier Device Package: 55CT	paquet: 55CT	Stock3 488	60V	960MHz ~ 1.215GHz	-	8dB ~ 9dB	225W	10 @ 300mA, 5V	4.5A	200°C (TJ)	Chassis Mount	55CT	55CT
MDS70	Microsemi Corporation	TRANS RF BIPO 225W 5A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.3dB ~ 11.65dB Power - Max: 225W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	paquet: 55CX	Stock4 480	65V	1.03GHz ~ 1.09GHz	-	10.3dB ~ 11.65dB	225W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	55CX	55CX
2301	Microsemi Corporation	TRANS HBT RF BIPOLAR 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 5.6W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	paquet: 55BT	Stock1 660 800	45V	2.3GHz	-	8dB	5.6W	10 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	55BT	55BT
TAN15	Microsemi Corporation	TRANS RF BIPO 175W 2A 55LT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LT Supplier Device Package: 55LT	paquet: 55LT	Stock4 320	50V	960MHz ~ 1.215GHz	-	7dB ~ 8dB	175W	-	2A	200°C (TJ)	Chassis Mount	55LT	55LT
10A060	Microsemi Corporation	TRANS RF BIPO 21W 3A 55FT-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 21W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	paquet: 55FT	Stock7 984	24V	1GHz	-	8dB ~ 8.5dB	21W	20 @ 400mA, 5V	3A	200°C (TJ)	Stud Mount	55FT	55FT
MS1004	Microsemi Corporation	TRANS RF BIPO 270W 20A TO-220AC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14.5dB Power - Max: 330W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M177 Supplier Device Package: M177	paquet: M177	Stock6 848	55V	30MHz	-	14.5dB	330W	15 @ 10A, 6V	40A	200°C (TJ)	Chassis Mount	M177	M177
2304	Microsemi Corporation	TRANS BIPO 20V 4W 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 10.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	paquet: 55BT	Stock813 336	45V	2.3GHz	-	8dB	10.2W	10 @ 300mA, 5V	600mA	200°C (TJ)	Chassis Mount	55BT	55BT
23A025	Microsemi Corporation	TRANS RF BIPO 9W 1.2A 55BT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.7GHz Noise Figure (dB Typ @ f): - Gain: 6dB ~ 6.3dB Power - Max: 9W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 420mA, 5V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	paquet: 55BT	Stock2 896	22V	3.7GHz	-	6dB ~ 6.3dB	9W	20 @ 420mA, 5V	1.2A	200°C (TJ)	Chassis Mount	55BT	55BT
0912-7	Microsemi Corporation	TRANS RF BIPO 50W 1A 55CX Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	paquet: 55CX	Stock7 104	60V	960MHz ~ 1.215GHz	-	8.5dB	50W	10 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	55CX	55CX
23A005	Microsemi Corporation	TRANS RF BIPO 3W 400MA 55BT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 4.3GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	paquet: 55BT	Stock3 392	22V	4.3GHz	-	8.5dB ~ 9.5dB	3W	20 @ 100mA, 5V	400mA	200°C (TJ)	Chassis Mount	55BT	55BT
TPR175	Microsemi Corporation	TRANS RF BIPO 290W 9A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20mA, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	paquet: 55CX	Stock2 640	55V	1.03GHz ~ 1.09GHz	-	8dB ~ 9dB	290W	10 @ 20mA, 5V	9A	200°C (TJ)	Chassis Mount	55CX	55CX
MS3022	Microsemi Corporation	TRANS RF BIPO 7W 200MA M210 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1GHz ~ 2GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M210 Supplier Device Package: M210	paquet: M210	Stock2 288	45V	1GHz ~ 2GHz	-	7dB	7W	15 @ 100mA, 5V	200mA	200°C (TJ)	Chassis Mount	M210	M210
2A8	Microsemi Corporation	TRANS RF BIPO 5.3W 300MA 55EU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 21V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 9dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55EU Supplier Device Package: 55EU	paquet: 55EU	Stock2 560	21V	2GHz	-	7dB ~ 9dB	5.3W	20 @ 100mA, 5V	300mA	150°C (TJ)	Chassis Mount	55EU	55EU
1035MP	Microsemi Corporation	TRANS RF BIPO 125W 2.5A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 10.5dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	paquet: 55FW-1	Stock7 664	65V	1.025GHz ~ 1.15GHz	-	10dB ~ 10.5dB	125W	20 @ 100mA, 5V	2.5A	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
2A5	Microsemi Corporation	TRANS BIPO 55ET-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.4GHz ~ 3.7GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 9dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 3mA Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55ET Supplier Device Package: 55ET	paquet: 55ET	Stock2 496	22V	3.4GHz ~ 3.7GHz	-	7dB ~ 9dB	5.3W	20 @ 100mA, 5V	3mA	200°C (TJ)	Stud Mount	55ET	55ET
MS2553C	Microsemi Corporation	TRANS RF BIPO 175W 4A M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10.5dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	paquet: M220	Stock7 520	25V	1.025GHz ~ 1.15GHz	-	10.5dB	175W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	M220	M220
2001	Microsemi Corporation	TRANS HBT RF BIPOLAR 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	paquet: 55BT	Stock3 904	50V	2GHz	-	9.5dB	5W	20 @ 100mA, 5V	250mA	-	Chassis Mount	55BT	55BT
UMIL10	Microsemi Corporation	TRANS RF BIPO 28W 1.5A 55FT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 100MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 28W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	paquet: 55FT	Stock4 432	30V	100MHz ~ 400MHz	-	10dB	28W	10 @ 200mA, 5V	1.5A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
UTV040	Microsemi Corporation	TRANS RF BIPO 25W 2.5A 55FT-7 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	paquet: 55FT	Stock6 112	25V	470MHz ~ 860MHz	-	9dB	25W	10 @ 500mA, 5V	2.5A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
1090MP	Microsemi Corporation	TRANS RF BIPO 250W 6.5A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.08dB ~ 8.5dB Power - Max: 250W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 6.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	paquet: 55FW-1	Stock7 776	65V	1.025GHz ~ 1.15GHz	-	8.08dB ~ 8.5dB	250W	15 @ 500mA, 5V	6.5A	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
1075MP	Microsemi Corporation	TRANS RF BIPO 250W 6.5A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB ~ 8.5dB Power - Max: 250W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 6.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	paquet: 55FW-1	Stock5 904	65V	1.025GHz ~ 1.15GHz	-	7.6dB ~ 8.5dB	250W	20 @ 100mA, 5V	6.5A	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
10A015	Microsemi Corporation	TRANS RF BIPO 6W 750MA 55FT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 2.7GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 750mA Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	paquet: 55FT	Stock5 120	24V	2.7GHz	-	9dB ~ 9.5dB	6W	20 @ 100mA, 5V	750mA	200°C (TJ)	Stud Mount	55FT	55FT
10A030	Microsemi Corporation	TRANS RF BIPO 13W 1.5A 55FT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 2.5GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB ~ 8.5dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	paquet: 55FT	Stock7 936	24V	2.5GHz	-	7.8dB ~ 8.5dB	13W	20 @ 200mA, 5V	1.5A	200°C (TJ)	Stud Mount	55FT	55FT
MS1001	Microsemi Corporation	TRANS RF BIPO 270W 20A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	paquet: M174	Stock5 424	18V	30MHz	-	13dB	270W	20 @ 5A, 5V	20A	200°C (TJ)	Chassis Mount	M174	M174
MS1003	Microsemi Corporation	TRANS RF BIPO 270W 20A TO-220AC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 136MHz ~ 175MHz Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M111 Supplier Device Package: M111	paquet: M111	Stock3 344	18V	136MHz ~ 175MHz	-	6dB	270W	10 @ 5A, 5V	20A	200°C (TJ)	Surface Mount	M111	M111
JANTXV2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	paquet: 3-SMD, No Lead	Stock2 352	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
1015MP	Microsemi Corporation	TRANS RF BIPO 50W 1A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 11dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW Supplier Device Package: 55FW	paquet: 55FW	Stock4 832	65V	1.025GHz ~ 1.15GHz	-	10dB ~ 11dB	50W	20 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	55FW	55FW
UTV005	Microsemi Corporation	TRANS RF BIPO 8W 750MA 55FT-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 8W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 750mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	paquet: 55FT	Stock7 296	24V	470MHz ~ 860MHz	-	11dB	8W	20 @ 100mA, 5V	750mA	200°C (TJ)	Chassis, Stud Mount	55FT	55FT

1014-6A

Microsemi Corporation

TRANS RF BIPO 19W 1A 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 7.5dB
Power - Max: 19W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

paquet: 55LV

Stock3 856

50V

1GHz ~ 1.4GHz

-

7dB ~ 7.5dB

19W

-

1A

200°C (TJ)

Chassis Mount

55LV

MS1509

Microsemi Corporation

TRANS RF BIPO 260W 15A M168

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 5.5dBi
Power - Max: 260W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M168
Supplier Device Package: M168

paquet: M168

Stock4 848

33V

500MHz

-

5.5dBi

260W

20 @ 1mA, 5V

15A

200°C (TJ)

Chassis Mount

M168

0912-45

Microsemi Corporation

TRANS RF BIPO 225W 4.5A 55CT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 4.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CT
Supplier Device Package: 55CT

paquet: 55CT

Stock3 488

60V

960MHz ~ 1.215GHz

-

8dB ~ 9dB

225W

10 @ 300mA, 5V

4.5A

200°C (TJ)

Chassis Mount

55CT

MDS70

Microsemi Corporation

TRANS RF BIPO 225W 5A 55CX1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.3dB ~ 11.65dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

paquet: 55CX

Stock4 480

65V

1.03GHz ~ 1.09GHz

-

10.3dB ~ 11.65dB

225W

20 @ 500mA, 5V

5A

200°C (TJ)

Chassis Mount

55CX

2301

Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 5.6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

paquet: 55BT

Stock1 660 800

45V

2.3GHz

-

8dB

5.6W

10 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

55BT

TAN15

Microsemi Corporation

TRANS RF BIPO 175W 2A 55LT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LT
Supplier Device Package: 55LT

paquet: 55LT

Stock4 320

50V

960MHz ~ 1.215GHz

-

7dB ~ 8dB

175W

-

2A

200°C (TJ)

Chassis Mount

55LT

10A060

Microsemi Corporation

TRANS RF BIPO 21W 3A 55FT-2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 21W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

paquet: 55FT

Stock7 984

24V

1GHz

-

8dB ~ 8.5dB

21W

20 @ 400mA, 5V

3A

200°C (TJ)

Stud Mount

55FT

MS1004

Microsemi Corporation

TRANS RF BIPO 270W 20A TO-220AC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14.5dB
Power - Max: 330W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M177
Supplier Device Package: M177

paquet: M177

Stock6 848

55V

30MHz

-

14.5dB

330W

15 @ 10A, 6V

40A

200°C (TJ)

Chassis Mount

M177

2304

Microsemi Corporation

TRANS BIPO 20V 4W 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 10.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

paquet: 55BT

Stock813 336

45V

2.3GHz

-

8dB

10.2W

10 @ 300mA, 5V

600mA

200°C (TJ)

Chassis Mount

55BT

23A025

Microsemi Corporation

TRANS RF BIPO 9W 1.2A 55BT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 3.7GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB ~ 6.3dB
Power - Max: 9W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 420mA, 5V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

paquet: 55BT

Stock2 896

22V

3.7GHz

-

6dB ~ 6.3dB

9W

20 @ 420mA, 5V

1.2A

200°C (TJ)

Chassis Mount

55BT

0912-7

Microsemi Corporation

TRANS RF BIPO 50W 1A 55CX

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

paquet: 55CX

Stock7 104

60V

960MHz ~ 1.215GHz

-

8.5dB

50W

10 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

55CX

23A005

Microsemi Corporation

TRANS RF BIPO 3W 400MA 55BT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 4.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

paquet: 55BT

Stock3 392

22V

4.3GHz

-

8.5dB ~ 9.5dB

3W

20 @ 100mA, 5V

400mA

200°C (TJ)

Chassis Mount

55BT

TPR175

Microsemi Corporation

TRANS RF BIPO 290W 9A 55CX1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20mA, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

paquet: 55CX

Stock2 640

55V

1.03GHz ~ 1.09GHz

-

8dB ~ 9dB

290W

10 @ 20mA, 5V

9A

200°C (TJ)

Chassis Mount

55CX

MS3022

Microsemi Corporation

TRANS RF BIPO 7W 200MA M210

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1GHz ~ 2GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M210
Supplier Device Package: M210

paquet: M210

Stock2 288

45V

1GHz ~ 2GHz

-

7dB

7W

15 @ 100mA, 5V

200mA

200°C (TJ)

Chassis Mount

M210

2A8

Microsemi Corporation

TRANS RF BIPO 5.3W 300MA 55EU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 21V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 9dB
Power - Max: 5.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55EU
Supplier Device Package: 55EU

paquet: 55EU

Stock2 560

21V

2GHz

-

7dB ~ 9dB

5.3W

20 @ 100mA, 5V

300mA

150°C (TJ)

Chassis Mount

55EU

1035MP

Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 10.5dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

paquet: 55FW-1

Stock7 664

65V

1.025GHz ~ 1.15GHz

-

10dB ~ 10.5dB

125W

20 @ 100mA, 5V

2.5A

200°C (TJ)

Chassis Mount

55FW-1

2A5

Microsemi Corporation

TRANS BIPO 55ET-2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 3.4GHz ~ 3.7GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 9dB
Power - Max: 5.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 3mA
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55ET
Supplier Device Package: 55ET

paquet: 55ET

Stock2 496

22V

3.4GHz ~ 3.7GHz

-

7dB ~ 9dB

5.3W

20 @ 100mA, 5V

3mA

200°C (TJ)

Stud Mount

55ET

MS2553C

Microsemi Corporation

TRANS RF BIPO 175W 4A M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10.5dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220

paquet: M220

Stock7 520

25V

1.025GHz ~ 1.15GHz

-

10.5dB

175W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

M220

2001

Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

paquet: 55BT

Stock3 904

50V

2GHz

-

9.5dB

5W

20 @ 100mA, 5V

250mA

-

Chassis Mount

55BT

UMIL10

Microsemi Corporation

TRANS RF BIPO 28W 1.5A 55FT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 100MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 28W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

paquet: 55FT

Stock4 432

30V

100MHz ~ 400MHz

-

10dB

28W

10 @ 200mA, 5V

1.5A

200°C (TJ)

Chassis, Stud Mount

55FT

UTV040

Microsemi Corporation

TRANS RF BIPO 25W 2.5A 55FT-7

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

paquet: 55FT

Stock6 112

25V

470MHz ~ 860MHz

-

9dB

25W

10 @ 500mA, 5V

2.5A

200°C (TJ)

Chassis, Stud Mount

55FT

1090MP

Microsemi Corporation

TRANS RF BIPO 250W 6.5A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.08dB ~ 8.5dB
Power - Max: 250W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Current - Collector (Ic) (Max): 6.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

paquet: 55FW-1

Stock7 776

65V

1.025GHz ~ 1.15GHz

-

8.08dB ~ 8.5dB

250W

15 @ 500mA, 5V

6.5A

200°C (TJ)

Chassis Mount

55FW-1

1075MP

Microsemi Corporation

TRANS RF BIPO 250W 6.5A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB ~ 8.5dB
Power - Max: 250W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 6.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

paquet: 55FW-1

Stock5 904

65V

1.025GHz ~ 1.15GHz

-

7.6dB ~ 8.5dB

250W

20 @ 100mA, 5V

6.5A

200°C (TJ)

Chassis Mount

55FW-1

10A015

Microsemi Corporation

TRANS RF BIPO 6W 750MA 55FT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 2.7GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 9.5dB
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 750mA
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

paquet: 55FT

Stock5 120

24V

2.7GHz

-

9dB ~ 9.5dB

6W

20 @ 100mA, 5V

750mA

200°C (TJ)

Stud Mount

55FT

10A030

Microsemi Corporation

TRANS RF BIPO 13W 1.5A 55FT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB ~ 8.5dB
Power - Max: 13W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

paquet: 55FT

Stock7 936

24V

2.5GHz

-

7.8dB ~ 8.5dB

13W

20 @ 200mA, 5V

1.5A

200°C (TJ)

Stud Mount

55FT

MS1001

Microsemi Corporation

TRANS RF BIPO 270W 20A M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174

paquet: M174

Stock5 424

18V

30MHz

-

13dB

270W

20 @ 5A, 5V

20A

200°C (TJ)

Chassis Mount

M174

MS1003

Microsemi Corporation

TRANS RF BIPO 270W 20A TO-220AC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 136MHz ~ 175MHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M111
Supplier Device Package: M111

paquet: M111

Stock3 344

18V

136MHz ~ 175MHz

-

6dB

270W

10 @ 5A, 5V

20A

200°C (TJ)

Surface Mount

M111

JANTXV2N2857UB

Microsemi Corporation

TRANS NPN 15V 0.04A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

paquet: 3-SMD, No Lead

Stock2 352

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

1015MP

Microsemi Corporation

TRANS RF BIPO 50W 1A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 11dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW
Supplier Device Package: 55FW

paquet: 55FW

Stock4 832

65V

1.025GHz ~ 1.15GHz

-

10dB ~ 11dB

50W

20 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

55FW

UTV005

Microsemi Corporation

TRANS RF BIPO 8W 750MA 55FT-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 750mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

paquet: 55FT

Stock7 296

24V

470MHz ~ 860MHz

-

11dB

8W

20 @ 100mA, 5V

750mA

200°C (TJ)

Chassis, Stud Mount

55FT