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Produits Microsemi Corporation - Transistors - IGBT - Simples

Dossiers 144
Page  4/5
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APT25GR120BSCD10
Microsemi Corporation

IGBT 1200V 75A 521W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
  • Power - Max: 521W
  • Switching Energy: 434µJ (on), 466µJ (off)
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 600V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: TO-247-3
Stock7 056
1200V
75A
100A
3.2V @ 15V, 25A
521W
434µJ (on), 466µJ (off)
Standard
203nC
16ns/122ns
600V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT50GT120B2RDQ2G
Microsemi Corporation

IGBT 1200V 94A 625W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 94A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 625W
  • Switching Energy: 2330µJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 24ns/230ns
  • Test Condition: 800V, 50A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: -
paquet: TO-247-3
Stock7 056
1200V
94A
150A
3.7V @ 15V, 50A
625W
2330µJ (off)
Standard
340nC
24ns/230ns
800V, 50A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
-
APT50GP60BG
Microsemi Corporation

IGBT 600V 100A 625W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 190A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 625W
  • Switching Energy: 465µJ (on), 637µJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 19ns/83ns
  • Test Condition: 400V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock7 024
600V
100A
190A
2.7V @ 15V, 50A
625W
465µJ (on), 637µJ (off)
Standard
165nC
19ns/83ns
400V, 50A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT70GR65B2SCD30
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 134A
  • Current - Collector Pulsed (Icm): 260A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
  • Power - Max: 595W
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: 305nC
  • Td (on/off) @ 25°C: 19ns/170ns
  • Test Condition: 433V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX? [B2]
paquet: TO-247-3
Stock4 864
650V
134A
260A
2.4V @ 15V, 70A
595W
-
-
305nC
19ns/170ns
433V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX? [B2]
APT75GN120B2G
Microsemi Corporation

IGBT 1200V 200A 833W TMAX

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 833W
  • Switching Energy: 8045µJ (on), 7640µJ (off)
  • Input Type: Standard
  • Gate Charge: 425nC
  • Td (on/off) @ 25°C: 60ns/620ns
  • Test Condition: 800V, 75A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
paquet: TO-247-3 Variant
Stock2 768
1200V
200A
225A
2.1V @ 15V, 75A
833W
8045µJ (on), 7640µJ (off)
Standard
425nC
60ns/620ns
800V, 75A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT80GA90LD40
Microsemi Corporation

IGBT 900V 145A 625W TO-264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 145A
  • Current - Collector Pulsed (Icm): 239A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
  • Power - Max: 625W
  • Switching Energy: 1652µJ (on), 1389µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 18ns/149ns
  • Test Condition: 600V, 47A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
paquet: TO-264-3, TO-264AA
Stock6 240
900V
145A
239A
3.1V @ 15V, 47A
625W
1652µJ (on), 1389µJ (off)
Standard
200nC
18ns/149ns
600V, 47A, 4.7 Ohm, 15V
25ns
-
Through Hole
TO-264-3, TO-264AA
TO-264
APT64GA90LD30
Microsemi Corporation

IGBT 900V 117A 500W TO-264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 193A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
  • Power - Max: 500W
  • Switching Energy: 1192µJ (on), 1088µJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: 18ns/131ns
  • Test Condition: 600V, 38A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
paquet: TO-264-3, TO-264AA
Stock6 352
900V
117A
193A
3.1V @ 15V, 38A
500W
1192µJ (on), 1088µJ (off)
Standard
162nC
18ns/131ns
600V, 38A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT68GA60B2D40
Microsemi Corporation

IGBT 600V 121A 520W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 121A
  • Current - Collector Pulsed (Icm): 202A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 520W
  • Switching Energy: 715µJ (on), 607µJ (off)
  • Input Type: Standard
  • Gate Charge: 198nC
  • Td (on/off) @ 25°C: 21ns/133ns
  • Test Condition: 400V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
paquet: TO-247-3 Variant
Stock7 056
600V
121A
202A
2.5V @ 15V, 40A
520W
715µJ (on), 607µJ (off)
Standard
198nC
21ns/133ns
400V, 40A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT68GA60LD40
Microsemi Corporation

IGBT 600V 121A 520W TO-264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 121A
  • Current - Collector Pulsed (Icm): 202A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 520W
  • Switching Energy: 715µJ (on), 607µJ (off)
  • Input Type: Standard
  • Gate Charge: 198nC
  • Td (on/off) @ 25°C: 21ns/133ns
  • Test Condition: 400V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
paquet: TO-264-3, TO-264AA
Stock7 312
600V
121A
202A
2.5V @ 15V, 40A
520W
715µJ (on), 607µJ (off)
Standard
198nC
21ns/133ns
400V, 40A, 4.7 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
APT70GR120B2
Microsemi Corporation

IGBT 1200V 160A 961W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
  • Power - Max: 961W
  • Switching Energy: 3.82mJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 544nC
  • Td (on/off) @ 25°C: 33ns/278ns
  • Test Condition: 600V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: TO-247-3
Stock3 392
1200V
160A
280A
3.2V @ 15V, 70A
961W
3.82mJ (on), 2.58mJ (off)
Standard
544nC
33ns/278ns
600V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT40GP60SG
Microsemi Corporation

IGBT 600V 100A 543W D3PAK

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 543W
  • Switching Energy: 385µJ (on), 352µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/64ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3 [S]
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Stock4 928
600V
100A
160A
2.7V @ 15V, 40A
543W
385µJ (on), 352µJ (off)
Standard
135nC
20ns/64ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
D3 [S]
hot APT40GP60BG
Microsemi Corporation

IGBT 600V 100A 543W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 543W
  • Switching Energy: 385µJ (on), 352µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/64ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock5 120
600V
100A
160A
2.7V @ 15V, 40A
543W
385µJ (on), 352µJ (off)
Standard
135nC
20ns/64ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT30GP60BG
Microsemi Corporation

IGBT 600V 100A 463W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock8 664
600V
100A
100A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT25GP120BG
Microsemi Corporation

IGBT 1200V 69A 417W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 69A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
  • Power - Max: 417W
  • Switching Energy: 500µJ (on), 438µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 12ns/70ns
  • Test Condition: 600V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock4 128
1200V
69A
90A
3.9V @ 15V, 25A
417W
500µJ (on), 438µJ (off)
Standard
110nC
12ns/70ns
600V, 25A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT50GS60BRDLG
Microsemi Corporation

IGBT 600V 93A 415W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 93A
  • Current - Collector Pulsed (Icm): 195A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: 415W
  • Switching Energy: 755µJ (off)
  • Input Type: Standard
  • Gate Charge: 235nC
  • Td (on/off) @ 25°C: 16ns/225ns
  • Test Condition: 400V, 50A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: TO-247-3
Stock4 720
600V
93A
195A
3.15V @ 15V, 50A
415W
755µJ (off)
Standard
235nC
16ns/225ns
400V, 50A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT30GP60LDLG
Microsemi Corporation

IGBT 600V 100A 463W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
paquet: TO-264-3, TO-264AA
Stock6 256
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
APT50GR120L
Microsemi Corporation

IGBT 1200V 117A 694W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
  • Power - Max: 694W
  • Switching Energy: 2.14mJ (on), 1.48mJ (off)
  • Input Type: Standard
  • Gate Charge: 445nC
  • Td (on/off) @ 25°C: 28ns/237ns
  • Test Condition: 600V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
paquet: TO-264-3, TO-264AA
Stock4 512
1200V
117A
200A
3.2V @ 15V, 50A
694W
2.14mJ (on), 1.48mJ (off)
Standard
445nC
28ns/237ns
600V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
APT30GP60B2DLG
Microsemi Corporation

IGBT 600V 100A 463W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX?
paquet: TO-247-3
Stock2 832
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX?
APT25GN120B2DQ2G
Microsemi Corporation

IGBT 1200V 67A 272W TMAX

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 67A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 272W
  • Switching Energy: 2.15µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 22ns/280ns
  • Test Condition: 800V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
paquet: TO-247-3 Variant
Stock5 248
1200V
67A
75A
2.1V @ 15V, 25A
272W
2.15µJ (off)
Standard
155nC
22ns/280ns
800V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
APT45GR65SSCD10
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 224A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 543W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 15ns/100ns
  • Test Condition: 433V, 45A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D3Pak
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock6 432
650V
118A
224A
2.4V @ 15V, 45A
543W
-
Standard
203nC
15ns/100ns
433V, 45A, 4.3 Ohm, 15V
80ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D3Pak
hot APT25GP90BDQ1G
Microsemi Corporation

IGBT 900V 72A 417W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 72A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
  • Power - Max: 417W
  • Switching Energy: 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock5 504
900V
72A
110A
3.9V @ 15V, 25A
417W
370µJ (off)
Standard
110nC
13ns/55ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT25GP90BG
Microsemi Corporation

IGBT 900V 72A 417W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 72A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
  • Power - Max: 417W
  • Switching Energy: 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 600V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock5 904
900V
72A
110A
3.9V @ 15V, 25A
417W
370µJ (off)
Standard
110nC
13ns/55ns
600V, 25A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT45GR65BSCD10
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 224A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 543W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 15ns/100ns
  • Test Condition: 433V, 45A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: TO-247-3
Stock5 088
650V
118A
224A
2.4V @ 15V, 45A
543W
-
Standard
203nC
15ns/100ns
433V, 45A, 4.3 Ohm, 15V
80ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT70GR65B2DU40
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 134A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
  • Power - Max: 595W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 305nC
  • Td (on/off) @ 25°C: 18ns/170ns
  • Test Condition: 433V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX? [B2]
paquet: TO-247-3
Stock4 752
650V
134A
280A
2.4V @ 15V, 70A
595W
-
Standard
305nC
18ns/170ns
433V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX? [B2]
APT15GP60BDLG
Microsemi Corporation

IGBT 600V 56A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 65A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 130µJ (on), 121µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 8ns/29ns
  • Test Condition: 400V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: TO-247-3
Stock6 960
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 121µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT54GA60BD30
Microsemi Corporation

IGBT 600V 96A 416W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 161A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 416W
  • Switching Energy: 534µJ (on), 466µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 17ns/112ns
  • Test Condition: 400V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock2 544
600V
96A
161A
2.5V @ 15V, 32A
416W
534µJ (on), 466µJ (off)
Standard
28nC
17ns/112ns
400V, 32A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT15GP90BG
Microsemi Corporation

IGBT 900V 43A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 60nC
  • Td (on/off) @ 25°C: 9ns/33ns
  • Test Condition: 600V, 15A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock3 520
900V
43A
60A
3.9V @ 15V, 15A
250W
200µJ (off)
Standard
60nC
9ns/33ns
600V, 15A, 4.3 Ohm, 15V
-
-
Through Hole
TO-247-3
TO-247 [B]
APT13GP120BDQ1G
Microsemi Corporation

IGBT 1200V 41A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 9ns/28ns
  • Test Condition: 600V, 13A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock4 688
1200V
41A
50A
3.9V @ 15V, 13A
250W
115µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT30GS60BRDLG
Microsemi Corporation

IGBT 600V 54A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 113A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 16ns/360ns
  • Test Condition: 400V, 30A, 9.1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
paquet: TO-247-3
Stock6 480
600V
54A
113A
3.15V @ 15V, 30A
250W
570µJ (off)
Standard
145nC
16ns/360ns
400V, 30A, 9.1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
APT50GS60BRG
Microsemi Corporation

IGBT 600V 93A 415W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 93A
  • Current - Collector Pulsed (Icm): 195A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: 415W
  • Switching Energy: 755µJ (off)
  • Input Type: Standard
  • Gate Charge: 235nC
  • Td (on/off) @ 25°C: 16ns/225ns
  • Test Condition: 400V, 50A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
paquet: TO-247-3
Stock2 896
600V
93A
195A
3.15V @ 15V, 50A
415W
755µJ (off)
Standard
235nC
16ns/225ns
400V, 50A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]