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Produits Toshiba Semiconductor and Storage - Transistors - Bipolaires (BJT) - Matrices, prépolarisés

Dossiers 207
Page  4/7
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
RN1905(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock7 584
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN1908(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock2 352
100mA
50V
22k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN2901FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock6 896
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
RN2911FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock4 336
100mA
50V
10k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
RN1909FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock3 392
100mA
50V
47k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock4 496
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
RN1964TE85LF
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock5 792
100mA
50V
47k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN2905T5LFT
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock4 304
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN4986(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock7 632
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100µA (ICBO)
250MHz, 200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN1902T5LFT
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock3 696
100mA
50V
10k
10k
50 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN4989(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock3 904
100mA
50V
47k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100µA (ICBO)
250MHz, 200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN4611(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
paquet: SC-74, SOT-457
Stock25 998
100mA
50V
10k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
300mW
Surface Mount
SC-74, SOT-457
SM6
RN4610(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
paquet: SC-74, SOT-457
Stock22 596
100mA
50V
4.7k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
300mW
Surface Mount
SC-74, SOT-457
SM6
RN2971(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock29 952
100mA
50V
10k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN2969(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: US6
paquet: SC-101, SOT-883
Stock23 706
100mA
50V
47k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
SC-101, SOT-883
US6
RN2967(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: US6
paquet: SC-101, SOT-883
Stock26 088
100mA
50V
10k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
SC-101, SOT-883
US6
RN2604(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
paquet: SC-74, SOT-457
Stock25 038
100mA
50V
47k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
300mW
Surface Mount
SC-74, SOT-457
SM6
RN2603(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
paquet: SC-74, SOT-457
Stock23 988
100mA
50V
22k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
300mW
Surface Mount
SC-74, SOT-457
SM6
RN1973(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock23 364
100mA
50V
47k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
-
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN1970(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock24 660
100mA
50V
4.7k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN1968(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock21 894
100mA
50V
22k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN1963(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: 6-TSSOP, SC-88, SOT-363
Stock22 182
100mA
50V
22k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN1611(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SM6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
paquet: SC-74, SOT-457
Stock29 382
100mA
50V
10k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
300mW
Surface Mount
SC-74, SOT-457
SM6
RN2511(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: SC-74A, SOT-753
Stock26 274
100mA
50V
10k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
300mW
Surface Mount
SC-74A, SOT-753
SMV
RN2510(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: SC-74A, SOT-753
Stock22 548
100mA
50V
4.7k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
300mW
Surface Mount
SC-74A, SOT-753
SMV
RN1509(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

  • Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: SC-74A, SOT-753
Stock21 822
100mA
50V
47k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
300mW
Surface Mount
SC-74A, SOT-753
SMV
RN2713JE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
paquet: SOT-553
Stock33 582
100mA
50V
47k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
100mW
Surface Mount
SOT-553
ESV
RN2712JE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
paquet: SOT-553
Stock35 682
100mA
50V
22k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
100mW
Surface Mount
SOT-553
ESV
RN2711JE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
paquet: SOT-553
Stock30 648
100mA
50V
10k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
100mW
Surface Mount
SOT-553
ESV
RN2709JE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
paquet: SOT-553
Stock33 318
100mA
50V
47k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
100mW
Surface Mount
SOT-553
ESV