Page 11 - Produits Toshiba Semiconductor and Storage - Transistors - Bipolaires (BJT) - Simples | Heisener Electronics
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Produits Toshiba Semiconductor and Storage - Transistors - Bipolaires (BJT) - Simples

Dossiers 361
Page  11/13
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC5930(T2MITUM,FM
Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
paquet: SC-71
Stock3 200
1A
600V
1V @ 75mA, 600mA
100µA (ICBO)
40 @ 200mA, 5V
1W
-
150°C (TJ)
Through Hole
SC-71
MSTM
2SC5549,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 400V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 25mA, 200mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 40mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock2 432
1A
400V
1V @ 25mA, 200mA
100µA (ICBO)
20 @ 40mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5459(TOJS,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 3A 400V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock2 736
3A
400V
1V @ 150mA, 1.2A
100µA (ICBO)
20 @ 300mA, 5V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5201,T6MURAF(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock3 888
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5201,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock2 560
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5201,F(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock7 440
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5201(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock6 992
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5201(T6MURATAFM
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock3 728
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5172(YAZK,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 5A 400V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock2 304
5A
400V
1V @ 250mA, 2A
20µA (ICBO)
20 @ 500mA, 5V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171,Q(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock2 464
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171,ONKQ(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock2 112
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171,MATUDQ(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock5 584
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171(ONK,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock6 992
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171(LBS2MATQ,M
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock2 736
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4935-Y,Q(J
Toshiba Semiconductor and Storage

TRANS NPN 3A 50V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock5 184
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
2W
80MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4881,LS1SUMIF(M
Toshiba Semiconductor and Storage

TRANS NPN 5A 50V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock5 600
5A
50V
400mV @ 125mA, 2.5A
1µA (ICBO)
100 @ 1A, 1V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4881(CANO,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 5A 50V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock5 248
5A
50V
400mV @ 125mA, 2.5A
1µA (ICBO)
100 @ 1A, 1V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,YHF(M
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock2 992
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,YHF(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock4 128
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,WNLF(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock2 448
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,TOA1F(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock5 888
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,NSEIKIF(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock6 512
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,HFEF(M
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock7 440
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,HFEF(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock4 416
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,F(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock6 768
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793(PAIO,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock5 536
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793(LBSAN,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock3 712
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4682,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 3A 15V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
  • Power - Max: 900mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock7 728
3A
15V
500mV @ 30mA, 3A
1µA (ICBO)
800 @ 500mA, 1V
900mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC4682,T6CSF(J
Toshiba Semiconductor and Storage

TRANS NPN 3A 15V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
  • Power - Max: 900mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock4 832
3A
15V
500mV @ 30mA, 3A
1µA (ICBO)
800 @ 500mA, 1V
900mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC4604,T6F(M
Toshiba Semiconductor and Storage

TRANS NPN 3A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock2 448
3A
50V
500mV @ 75mA, 1.5A
100nA (ICBO)
120 @ 100mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD