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Produits Toshiba Semiconductor and Storage - Transistors - Bipolaires (BJT) - Simples

Dossiers 361
Page  2/13
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC6026CT-Y(TPL3)
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.1A CST3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
paquet: SC-101, SOT-883
Stock3 376
100mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
60MHz
150°C (TJ)
Surface Mount
SC-101, SOT-883
CST3
2SA1182-Y,LF
Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock4 256
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 100mA, 1V
150mW
200MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SA1587-BL,LF
Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A USM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock2 640
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
350 @ 2mA, 6V
100mW
100MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot 2SC4738-GR,LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
paquet: SC-75, SOT-416
Stock25 752
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
80MHz
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
TBC847B,LM
Toshiba Semiconductor and Storage

X34 PB-F SOT-23 TRANSISTOR FOR L

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA
  • Current - Collector Cutoff (Max): 30nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 320mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock73 800
150mA
50V
400mV @ 100mA, 5mA
30nA (ICBO)
200 @ 2mA, 5V
320mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
TTA004B,Q
Toshiba Semiconductor and Storage

TRANS PNP 160V 1.5A TO126N

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126N
paquet: TO-225AA, TO-126-3
Stock7 992
1.5A
160V
500mV @ 50mA, 500mA
100nA (ICBO)
140 @ 100mA, 5V
10W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
TBC857B,LM
Toshiba Semiconductor and Storage

X34 PB-F SOT-23 TRANSISTOR FOR L

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
  • Current - Collector Cutoff (Max): 30nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
  • Power - Max: 320mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
paquet: TO-236-3, SC-59, SOT-23-3
Stock24 456
150mA
50V
650mV @ 100mA, 5mA
30nA (ICBO)
210 @ 2mA, 5V
320mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
TTA1943(Q)
Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PL

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
paquet: TO-3PL
Stock7 152
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
150W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
TTC5200(Q)
Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
paquet: TO-3PL
Stock4 480
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
150W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
2SA1943N(S1,E,S)
Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PN

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
paquet: TO-3P-3, SC-65-3
Stock5 248
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
150W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
2SA1962-O(Q)
Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PN

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 130W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
paquet: TO-3P-3, SC-65-3
Stock9 948
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
130W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
hot 2SC5200-O(Q)
Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
paquet: TO-3PL
Stock304 956
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
150W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
hot 2SA1943-O(Q)
Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PL

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
paquet: TO-3PL
Stock162 000
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
150W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
2SC5232BTE85LF
Toshiba Semiconductor and Storage

TRANS NPN 12V 0.5A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
  • Power - Max: 150mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
paquet: TO-236-3, SC-59, SOT-23-3
Stock3 072
500mA
12V
250mV @ 10mA, 200mA
100nA (ICBO)
500 @ 10mA, 2V
150mW
130MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
2SC3324GRTE85LF
Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 368
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236
2SB906-Y(TE16L1,NQ
Toshiba Semiconductor and Storage

TRANS PNP 60V 3A PW-MOLD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 9MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock21 582
3A
60V
1.7V @ 300mA, 3A
100µA (ICBO)
100 @ 500mA, 5V
1W
9MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
2SA1162-O,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock26 916
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
150mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC4944-GR(TE85L,F
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USV

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
paquet: 5-TSSOP, SC-70-5, SOT-353
Stock6 720
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
2SA2154CT-GR,L3F
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.1A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
paquet: SC-101, SOT-883
Stock6 432
100mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SC-101, SOT-883
CST3
2SA1588-GR,LF
Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 100mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock3 440
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 100mA, 1V
100mW
200MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot 2SA2154MFV-GR(TPL3
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A VESM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
paquet: SOT-723
Stock90 540
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
150mW
80MHz
150°C (TJ)
Surface Mount
SOT-723
VESM
hot 2SC4116SU-Y,LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock3 960 000
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 2mA, 6V
100mW
80MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC4738-Y,LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
paquet: SC-75, SOT-416
Stock7 728
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
80MHz
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
hot 2SC4116-BL,LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock1 080 000
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
350 @ 2mA, 6V
100mW
80MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC4213BTE85LF
Toshiba Semiconductor and Storage

TRANS NPN 20V 0.3A USM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
  • Power - Max: 100mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock58 182
300mA
20V
100mV @ 3mA, 30A
100nA (ICBO)
350 @ 4mA, 2V
100mW
30MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SA1955FVBTPL3Z
Toshiba Semiconductor and Storage

TRANS PNP 12V 0.4A VESM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 400mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 100mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
paquet: SOT-723
Stock90 282
400mA
12V
250mV @ 10mA, 200mA
100nA (ICBO)
300 @ 10mA, 2V
100mW
130MHz
150°C (TJ)
Surface Mount
SOT-723
VESM
2SA1955FVATPL3Z
Toshiba Semiconductor and Storage

TRANS PNP 12V 0.4A VESM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 400mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Power - Max: 100mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
paquet: SC-101, SOT-883
Stock87 618
400mA
12V
250mV @ 10mA, 200mA
100nA (ICBO)
300 @ 10mA, 2V
100mW
130MHz
150°C (TJ)
Surface Mount
SC-101, SOT-883
CST3
2SC3325-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.5A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock21 690
500mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 100mA, 1V
200mW
300MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SA1312GRTE85LF
Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock84 378
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SA1312-BL(TE85L,F
Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock237 066
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
350 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini