Page 61 - Produits Vishay Siliconix

Référence	Fabricant	Description	paquet	Stock
SIR330DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	paquet: PowerPAK? SO-8	Stock16 632
SI4404DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock456 180
IRFR9110	Vishay Siliconix	MOSFET P-CH 100V 3.1A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock162 480
IRFR120TRL	Vishay Siliconix	MOSFET N-CH 100V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock40 392
IRFPC40	Vishay Siliconix	MOSFET N-CH 600V 6.8A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	paquet: TO-247-3	Stock263 160
2N6660	Vishay Siliconix	MOSFET N-CH 60V 0.99A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	paquet: TO-205AD, TO-39-3 Metal Can	Stock9 852
IRF820ALPBF	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	paquet: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock37 740
SIHU6N62E-GE3	Vishay Siliconix	MOSFET N-CH 620V 6A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 578pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	paquet: TO-251-3 Short Leads, IPak, TO-251AA	Stock5 440
SIB417EDK-T1-GE3	Vishay Siliconix	MOSFET P-CH 8V 9A SC75-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-75-6L Single Package / Case: PowerPAK? SC-75-6L	paquet: PowerPAK? SC-75-6L	Stock4 736
SQA401EJ-T1_GE3	Vishay Siliconix	MOSFET P-CH 20V POWERPAK SC-70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	paquet: PowerPAK? SC-70-6	Stock5 120
IRFD420PBF	Vishay Siliconix	MOSFET N-CH 500V 370MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	paquet: 4-DIP (0.300", 7.62mm)	Stock25 356
SIHG32N50D-GE3	Vishay Siliconix	MOSFET N-CH 500V 30A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	paquet: TO-247-3	Stock10 092
SI6415DQ-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 6.5A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock21 720
SIR424DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	paquet: PowerPAK? SO-8	Stock10 716
SIP21107DVP-33-E3	Vishay Siliconix	IC REG LINEAR 3.3V 150MA TSC75-6 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 72dB ~ 38dB (1kHz ~ 100kHz) Control Features: Enable, Power Good Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: PowerPAK? TSC-75-6 Supplier Device Package: PowerPAK? TSC75-6	paquet: PowerPAK? TSC-75-6	Stock5 424
9562901CA	Vishay Siliconix	MOSFET Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	paquet: -	Stock5 648
SJM187BXA	Vishay Siliconix	IC ANALOG SWITCH Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	paquet: -	Stock2 272
DG419AK	Vishay Siliconix	IC ANALOG SWITCH CMOS 8DIP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 35 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 175ns, 145ns -3db Bandwidth: - Charge Injection: 60pC Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: - Operating Temperature: -55°C ~ 125°C (TA) Package / Case: 8-CDIP (0.300", 7.62mm) Supplier Device Package: 8-CERDIP	paquet: 8-CDIP (0.300", 7.62mm)	Stock16 992
DG304AAK/883	Vishay Siliconix	IC SWITCH DUAL SPST 14CDIP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 50 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 250ns, 150ns -3db Bandwidth: - Charge Injection: 30pC Channel Capacitance (CS(off), CD(off)): 14pF, 14pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -74dB @ 500kHz Operating Temperature: -55°C ~ 125°C (TA) Package / Case: 14-CDIP (0.300", 7.62mm) Supplier Device Package: 14-CERDIP	paquet: 14-CDIP (0.300", 7.62mm)	Stock5 152
DG409LEDQ-GE3	Vishay Siliconix	IC MUX CMOS DUAL 4CH 16-TSSOP Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 2 On-State Resistance (Max): 23 Ohm Channel-to-Channel Matching (ΔRon): 1 Ohm Voltage - Supply, Single (V+): 3 V ~ 16 V Voltage - Supply, Dual (V±): ±3.3 V ~ 8 V Switch Time (Ton, Toff) (Max): 72ns, 47ns -3db Bandwidth: - Charge Injection: -10pC Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -109dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	paquet: 16-TSSOP (0.173", 4.40mm Width)	Stock5 520
DG418LDY-T1-E3	Vishay Siliconix	IC ANALOG SWITCH CMOS 8SOIC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 20 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 2.7 V ~ 12 V Voltage - Supply, Dual (V±): ±3 V ~ 6 V Switch Time (Ton, Toff) (Max): 43ns, 31ns -3db Bandwidth: - Charge Injection: 1pC Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -71dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock6 512
DG540AP	Vishay Siliconix	IC SWITCH QUAD SPST 20DIP Applications: Video Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Number of Channels: 4 On-State Resistance (Max): 60 Ohm Voltage - Supply, Single (V+): 3 V ~ 15 V Voltage - Supply, Dual (V±): ±3 V ~ 15 V -3db Bandwidth: 500MHz Features: RGB, T-Switch Configuration Operating Temperature: -55°C ~ 125°C (TA) Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-DIP	paquet: 20-DIP (0.300", 7.62mm)	Stock4 704
DG540DJ-E3	Vishay Siliconix	IC SWITCH QUAD SPST 20DIP Applications: Video Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Number of Channels: 4 On-State Resistance (Max): 60 Ohm Voltage - Supply, Single (V+): 3 V ~ 15 V Voltage - Supply, Dual (V±): ±3 V ~ 15 V -3db Bandwidth: 500MHz Features: RGB, T-Switch Configuration Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-PDIP	paquet: 20-DIP (0.300", 7.62mm)	Stock5 456
SI1317DL-T1-BE3	Vishay Siliconix	MOSFET P-CH 20V 1.4A/1.4A SC70-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	paquet: -	Stock8 661
SIDR610EP-T1-RE3	Vishay Siliconix	N-CHANNEL 200 V (D-S) 175C MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	paquet: -	Request a Quote
SIHFBF30S-GE3	Vishay Siliconix	MOSFET N-CHANNEL 900V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Stock2 799
SIRA20BDP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 82A/335A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 6.3W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	paquet: -	Stock30 585
SQJQ910EL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 100V 70A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	paquet: -	Stock5 970
SI6463BDQ-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 6.2A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 15mOhm @ 7.4A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	paquet: -	Request a Quote
SQJ992EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	paquet: -	Stock9 000

SIR330DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

paquet: PowerPAK? SO-8

Stock16 632

SI4404DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 15A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 23A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock456 180

IRFR9110

Vishay Siliconix

MOSFET P-CH 100V 3.1A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock162 480

IRFR120TRL

Vishay Siliconix

MOSFET N-CH 100V 7.7A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock40 392

IRFPC40

Vishay Siliconix

MOSFET N-CH 600V 6.8A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

paquet: TO-247-3

Stock263 160

2N6660

Vishay Siliconix

MOSFET N-CH 60V 0.99A TO-205

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-205AF (TO-39)
Package / Case: TO-205AD, TO-39-3 Metal Can

paquet: TO-205AD, TO-39-3 Metal Can

Stock9 852

IRF820ALPBF

Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock37 740

SIHU6N62E-GE3

Vishay Siliconix

MOSFET N-CH 620V 6A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 620V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 578pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

paquet: TO-251-3 Short Leads, IPak, TO-251AA

Stock5 440

SIB417EDK-T1-GE3

Vishay Siliconix

MOSFET P-CH 8V 9A SC75-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V
Vgs (Max): ±5V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-75-6L Single
Package / Case: PowerPAK? SC-75-6L

paquet: PowerPAK? SC-75-6L

Stock4 736

SQA401EJ-T1_GE3

Vishay Siliconix

MOSFET P-CH 20V POWERPAK SC-70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-70-6 Single
Package / Case: PowerPAK? SC-70-6

paquet: PowerPAK? SC-70-6

Stock5 120

IRFD420PBF

Vishay Siliconix

MOSFET N-CH 500V 370MA 4-DIP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 220mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Package / Case: 4-DIP (0.300", 7.62mm)

paquet: 4-DIP (0.300", 7.62mm)

Stock25 356

SIHG32N50D-GE3

Vishay Siliconix

MOSFET N-CH 500V 30A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

paquet: TO-247-3

Stock10 092

SI6415DQ-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 6.5A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock21 720

SIR424DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 30A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

paquet: PowerPAK? SO-8

Stock10 716

SIP21107DVP-33-E3

Vishay Siliconix

IC REG LINEAR 3.3V 150MA TSC75-6

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
Control Features: Enable, Power Good
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: PowerPAK? TSC-75-6
Supplier Device Package: PowerPAK? TSC75-6

paquet: PowerPAK? TSC-75-6

Stock5 424

9562901CA

Vishay Siliconix

MOSFET

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock5 648

SJM187BXA

Vishay Siliconix

IC ANALOG SWITCH

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock2 272

DG419AK

Vishay Siliconix

IC ANALOG SWITCH CMOS 8DIP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 35 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
-3db Bandwidth: -
Charge Injection: 60pC
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -
Operating Temperature: -55°C ~ 125°C (TA)
Package / Case: 8-CDIP (0.300", 7.62mm)
Supplier Device Package: 8-CERDIP

paquet: 8-CDIP (0.300", 7.62mm)

Stock16 992

DG304AAK/883

Vishay Siliconix

IC SWITCH DUAL SPST 14CDIP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 50 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 250ns, 150ns
-3db Bandwidth: -
Charge Injection: 30pC
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -74dB @ 500kHz
Operating Temperature: -55°C ~ 125°C (TA)
Package / Case: 14-CDIP (0.300", 7.62mm)
Supplier Device Package: 14-CERDIP

paquet: 14-CDIP (0.300", 7.62mm)

Stock5 152

DG409LEDQ-GE3

Vishay Siliconix

IC MUX CMOS DUAL 4CH 16-TSSOP

Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Number of Circuits: 2
On-State Resistance (Max): 23 Ohm
Channel-to-Channel Matching (ΔRon): 1 Ohm
Voltage - Supply, Single (V+): 3 V ~ 16 V
Voltage - Supply, Dual (V±): ±3.3 V ~ 8 V
Switch Time (Ton, Toff) (Max): 72ns, 47ns
-3db Bandwidth: -
Charge Injection: -10pC
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -109dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

paquet: 16-TSSOP (0.173", 4.40mm Width)

Stock5 520

DG418LDY-T1-E3

Vishay Siliconix

IC ANALOG SWITCH CMOS 8SOIC

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 20 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 2.7 V ~ 12 V
Voltage - Supply, Dual (V±): ±3 V ~ 6 V
Switch Time (Ton, Toff) (Max): 43ns, 31ns
-3db Bandwidth: -
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -71dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock6 512

DG540AP

Vishay Siliconix

IC SWITCH QUAD SPST 20DIP

Applications: Video
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Number of Channels: 4
On-State Resistance (Max): 60 Ohm
Voltage - Supply, Single (V+): 3 V ~ 15 V
Voltage - Supply, Dual (V±): ±3 V ~ 15 V
-3db Bandwidth: 500MHz
Features: RGB, T-Switch Configuration
Operating Temperature: -55°C ~ 125°C (TA)
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-DIP

paquet: 20-DIP (0.300", 7.62mm)

Stock4 704

DG540DJ-E3

Vishay Siliconix

IC SWITCH QUAD SPST 20DIP

Applications: Video
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Number of Channels: 4
On-State Resistance (Max): 60 Ohm
Voltage - Supply, Single (V+): 3 V ~ 15 V
Voltage - Supply, Dual (V±): ±3 V ~ 15 V
-3db Bandwidth: 500MHz
Features: RGB, T-Switch Configuration
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-PDIP

paquet: 20-DIP (0.300", 7.62mm)

Stock5 456

SI1317DL-T1-BE3

Vishay Siliconix

MOSFET P-CH 20V 1.4A/1.4A SC70-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323

paquet: -

Stock8 661

SIDR610EP-T1-RE3

Vishay Siliconix

N-CHANNEL 200 V (D-S) 175C MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8DC
Package / Case: PowerPAK® SO-8

paquet: -

Request a Quote

SIHFBF30S-GE3

Vishay Siliconix

MOSFET N-CHANNEL 900V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

Stock2 799

SIRA20BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 82A/335A PPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Vgs (Max): +16V, -12V
FET Feature: -
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

paquet: -

Stock30 585

SQJQ910EL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 100V 70A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Power - Max: 187W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

paquet: -

Stock5 970

SI6463BDQ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 6.2A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.4A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

paquet: -

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SQJ992EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

paquet: -

Stock9 000