Diodes Inc. - New 100V MOSFET H-bridge reduces footprint with compact 5mm x 4.5mm package (Diodes Incorporated DMHC10H170SFJ) | Heisener Electronics
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Diodes Inc. - New 100V MOSFET H-bridge reduces footprint with compact 5mm x 4.5mm package (Diodes Incorporated DMHC10H170SFJ)

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Date de Parution: 2016-03-25, Diodes Incorporated
The new Diodes Incorporated DMHC10H170SFJ is a 100V full H-bridge that integrates dual N-channel and P-channel MOSFETs in a tiny DFN5045 package (5mm x 4.5mm). This configuration reduces the number of components and board space, which is especially important in applications that require multiple devices, such as ultrasonic transducer arrays used in industrial inspection systems or marine sonar equipment. Other common applications include driving DC motors in 48V telecommunications fans and other inductive loads, such as coils in wireless charging pads. The DMHC10H170SFJ has a 100V drain-source breakdown voltage (BVDSS) with sufficient headroom to support 48V telecommunications rails and industrial applications. It also has a 5V gate voltage, which simplifies design by interfacing directly with the MCU. The 11A peak pulse current rating also means that the device can handle the inrush current of the excitation coil, which is usually more than five times the typical operating current of a DC motor. The DMHC10H170SFJ can replace four SOT23 or two SO-8 packages, enabling a compact array of multiple ultrasound transducers. An example of this is 1024 transducers, each of which needs to be individually driven by an H-bridge to provide a steerable focused beam for a phased array system. The company says the system is used to make material defect inspections or marine echo positioning systems.