RB521S30T1G Schottky Barrier Diode: Pinout, Features and Alternatives | Heisener Electronics
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RB521S30T1G Schottky Barrier Diode: Pinout, Features and Alternatives

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Date de Parution: 2025-03-20, ON Semiconductor

RB521S30T1G Description

The RB521S30T1G is a Schottky barrier diode for high-speed switching, circuit protection, and voltage clamping applications. Its extremely low forward voltage minimizes conduction loss, improving efficiency in power-sensitive circuits. Additionally, with the miniature surface-mount package, it is good for compact, portable, and hand-held devices where space is a key constraint.

RB521S30T1G Pinout

Cathode (1) – The negative terminal, where current flows out of the diode.

Anode (2) – The positive terminal, where current enters the diode.

RB521S30T1G Symbol

RB521S30T1G Footprint

RB521S30T1G 3D Model

RB521S30T1G Specification

Parameter Value
Diode Type Schottky Barrier Diode
Maximum Reverse Voltage 30V
Forward Voltage (V_F) @ I_F = 200mA 0.38V (typical)
Average Rectified Current 200mA
Voltage - Forward (Vf) (Max) @ If 500 mV @ 200 mA
Reverse Current (I_R) @ V_R = 10V 1.0µA (max)
Current - Reverse Leakage @ Vr 30 µA @ 10 V
Power Dissipation (P_D) 200mW
Speed Small Signal =< 200mA (Io), Any Speed
Operating Temperature -55°C ~ 125°C
Package Type SOD-523


RB521S30T1G Features

Extremely Fast Switching Speed

Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA 

Low Reverse Current

NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capabl

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

RB521S30T1G Applications

High-Speed Switching Circuits

Voltage Clamping

Rectification in Low Voltage Circuits

Circuit Protection

Portable and Handheld Devices

RF and Communication Circuits

RB521S30T1G Alternatives

Here are some alternative Schottky barrier diodes to the RB521S30T1G from the same series or with similar characteristics:

RB520S30T1G

RB522S30T1G

RB521S40T1G

RB520S40T1G

RB551V-30

RB751S30T1G

These alternatives offer similar low forward voltage and fast switching capabilities, making them suitable for circuit protection, rectification, and voltage clamping applications.

RB521S30T1G Marking Diagram

How to Use RB521S30T1G?

Using the RB521S30T1G Schottky diode is quite simple. First, identify the terminals— the anode (+) and the cathode (-), with the cathode usually marked by a band. When integrating it into a circuit, the connection depends on the application. 

For rectification, connect the anode to the AC or DC input and the cathode to the output. If using it for reverse polarity protection, place it in series with the power supply, with the anode to the positive voltage and the cathode to the load. In clamping or protection circuits, the cathode is typically connected to the signal line, while the anode goes to ground.

RB521S30T1G Package

The RB521S30T1G comes in a SOD-523 package, which is an ultra-miniature surface-mount design. This tiny footprint makes it perfect for circuits like handheld devices and portable electronics. 

Since it's an SMD (Surface-Mount Device), soldering needs to be precise — too much heat can damage the diode. It's best to use reflow soldering or a fine-tip soldering iron with controlled temperature. Once mounted, the SOD-523 package ensures strong electrical connections while keeping the overall design lightweight and efficient.

RB521S30T1G Manufacturer

The RB521S30T1G is made by Onsemi, a well-known semiconductor manufacturer specializing in power and signal management solutions. They're big in the game when it comes to energy-efficient electronics, supplying components for everything from automotive and industrial systems to consumer gadgets. 

FAQs

What is the RB521S30T1G used for?

It’s a Schottky diode designed for high-speed switching, circuit protection, and voltage clamping, commonly used in portable devices and low-power applications.

What are the pin configurations?

It has two pins: Anode (+) and Cathode (-). Current flows from the anode to the cathode when forward biased.

How does RB521S30T1G compare to standard diodes?

Compared to standard silicon diodes, it has a much lower forward voltage drop and faster switching speed, improving efficiency in low-voltage circuits.

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