The reference design supports the development of efficient all-silicon chargers | Heisener Electronics
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The reference design supports the development of efficient all-silicon chargers

Technology Cover
Date de Parution: 2022-04-01, Signal Transformer

    The RD-23 provides the company's latest SZ1131 CO2 Smart Power ACF controller technology, providing a way to provide a way to match or exceed performance with commercially available 30W GaN chargers at a cost typically associated with traditional silicon designs. Silanna Semiconductor has released a new ACF-based reference design that simplifies and speeds the development of 33W 1C fast charger applications created using silicon power FETs.

     The controller provides the industry's highest level of integration, including an adaptive digital PWM controller, uHV active clamped FET, active clamped door driver and start regulator into a single compact device. And this new device contains everything an engineer needs to be able to prototype and create a fully functional charger with low running and no load/standby power consumption, minimum number of components, BOM cost and size. It uses the SZ1131 - the company's latest ACF controller, which has a power rating of 65W for general input and 100W or more in PFC-enabled applications.

    Efficiency is flat to the general input (90-65VAC) input range, and the reference design can be produced entirely because it exceeds the conductive and radiated EMI requirements beyond the 6dB margin. Delivering a power density of 22W/ INCH3 (unpackaged), the device has a peak efficiency of over 92% and a no-load power consumption (@230vac) of less than 20mW.

    Ahsan Zaman, Director of Product Marketing, Silanna Semiconductor, commented, "The RD-23 is the latest in a series of silicon and gallium nitride based reference designs that enable engineers to quickly and easily develop the most efficient and power dense chargers in the industry." "In our benchmark tests, the EFFICIENCY and no-load consumption of the RD-23 both matched and exceeded the best gallium nitride based power adapters on the market. The RD-23 demonstrates the performance of the GAN class at the cost of silicon class."

     The working frequency of SZ1131 can reach 146kHz. It has the simplicity of design of simple flyback controller and has the advantages of ACF design. This includes recovering the leakage inductance energy of the flyback transformer and limiting the drain voltage spike of the primary MOSFET during the turn-off event. Using the company's OptiMode digital control architecture, it adjusts the device's operating mode on a cycle basis to maintain high efficiency, low electromagnetic interference, fast dynamic load regulation, and other critical power parameters in response to changing line voltages and loads.

    The SZ1131 uses a 16-pin SOIC package that provides over temperature, over current, over voltage, over power and short circuit protection, as well as transformer core saturation fault protection, without the need for additional external components.

   To further speed up rD-23 based designs, all PCB Gerber documentation and production documentation are available upon request.

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