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Global Power Technologies Group |
IGBT BOOST CHOP 600V 120A SOT227
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 120A
- Power - Max: 297W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 3.3nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock7 408 |
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Global Power Technologies Group |
MOSFET N-CH 600V 16A TO3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3039pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 312W (Tc)
- Rds On (Max) @ Id, Vgs: 470 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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paquet: TO-3P-3, SC-65-3 |
Stock6 400 |
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Global Power Technologies Group |
MOSFET N-CH 800V 9.5A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2336pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 640 |
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Global Power Technologies Group |
MOSFET N-CH 900V 7A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40.3W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock3 904 |
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Global Power Technologies Group |
MOSFET N-CH 900V 2.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2 368 |
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Global Power Technologies Group |
MOSFET N-CH 600V 7.5A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock3 856 |
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Global Power Technologies Group |
MOSFET N-CH 250V 16A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 944pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 93.9W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7 568 |
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Global Power Technologies Group |
MOSFET N-CH 700V 9A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1944pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock3 376 |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5 776 |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2 912 |
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Global Power Technologies Group |
SIC MOSFET/ SBD MODULE SOT-227 C
- Type: MOSFET
- Configuration: 1 Phase
- Current: 120A
- Voltage: 1200V
- Voltage - Isolation: 2500Vrms
- Package / Case: SOT-227-4, miniBLOC
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paquet: SOT-227-4, miniBLOC |
Stock7 072 |
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Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 60A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: 3581pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 135°C
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paquet: TO-247-2 |
Stock6 896 |
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Global Power Technologies Group |
SIC SCHOTTKY RECTIFIER
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 68A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 24A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80µA @ 600V
- Capacitance @ Vr, F: 1265pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-247-2 |
Stock5 152 |
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Global Power Technologies Group |
SIC SCHOTTKY RECTIFIER
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 15A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 264pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7 216 |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 50A TO247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 50A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 50A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 170µA @ 600V
- Capacitance @ Vr, F: 2635pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-247-2 |
Stock7 392 |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.7KV 10A TO247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 20µA @ 1700V
- Capacitance @ Vr, F: 812pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-247-2 |
Stock5 584 |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 10A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Capacitance @ Vr, F: 635pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: TO-220-2 |
Stock15 936 |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO247-3
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: -55°C ~ 135°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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paquet: TO-247-3 |
Stock7 600 |
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Global Power Technologies Group |
SIC SCHOTTKY RECTIFIER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 33A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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paquet: TO-247-3 |
Stock3 616 |
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Global Power Technologies Group |
SIC SCHOTTKY DIODE 1200V 2X8A TO
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 24A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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paquet: TO-247-3 |
Stock6 480 |
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Global Power Technologies Group |
TO-247-3L USING 2 600V/12A DIE
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 36A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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paquet: TO-247-3 |
Stock5 888 |
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Global Power Technologies Group |
DIODE FAST REC 1000V 120A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 2.35V @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 135ns
- Current - Reverse Leakage @ Vr: 25µA @ 1000V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock6 780 |
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Global Power Technologies Group |
DIODE SCHOTTKY 80V 120A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock4 384 |
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Global Power Technologies Group |
DIODE FAST REC 600V 120A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 105ns
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock6 852 |
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Global Power Technologies Group |
DIODE SCHOTTKY 120V 80A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io) (per Diode): 80A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 120V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock6 928 |
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Global Power Technologies Group |
DIODE SCHOTTKY 80V 30A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock6 928 |
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Global Power Technologies Group |
DIODE SCHOTT SBD 600V 50A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock6 976 |
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Global Power Technologies Group |
DIODE SCHOT SBD 1200V 15A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock6 720 |
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Global Power Technologies Group |
DIODE FAST REC 1200V 100A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 2.35V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 125ns
- Current - Reverse Leakage @ Vr: 25µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock7 648 |
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Global Power Technologies Group |
MOD SBD BRIDGE 600V 10A SOT227
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock7 792 |
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