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Global Power Technologies Group |
IGBT 1350V 60A 329W TO3PN
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 90A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 329W
- Switching Energy: 4.4mJ (on), 1.18mJ (off)
- Input Type: Standard
- Gate Charge: 300nC
- Td (on/off) @ 25°C: 30ns/145ns
- Test Condition: 600V, 30A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 450ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3
- Supplier Device Package: TO-3PN
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paquet: TO-3 |
Stock2 352 |
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Global Power Technologies Group |
SILICON IGBT MODULES
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 275A
- Power - Max: 1035W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 20.2nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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paquet: Module |
Stock6 288 |
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Global Power Technologies Group |
IGBT BUCK CHOP 1200V 60A SOT227
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 60A
- Power - Max: 340W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 4nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock7 968 |
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Global Power Technologies Group |
MOSFET N-CH 600V 2A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 17.3W (Tc)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock3 472 |
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Global Power Technologies Group |
MOSFET N-CH 250V 16A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 944pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 93.9W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 064 |
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Global Power Technologies Group |
MOSFET N-CH 800V 9.5A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2336pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock6 768 |
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Global Power Technologies Group |
MOSFET N-CH 900V 7A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 720 |
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Global Power Technologies Group |
MOSFET N-CH 200V 18A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30.4W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock4 160 |
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Global Power Technologies Group |
MOSFET N-CH 500V 8.5A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1195pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 127W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock3 536 |
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Global Power Technologies Group |
SIC MOSFET/SBD HALF BRIDGE MODUL
- Type: MOSFET
- Configuration: Half Bridge
- Current: 360A
- Voltage: 1200V
- Voltage - Isolation: 2500Vrms
- Package / Case: Power Module
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paquet: Power Module |
Stock4 960 |
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Global Power Technologies Group |
DIODE SCHOTTKY 120V 120A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 120V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock3 440 |
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Global Power Technologies Group |
DIODE SCHOTTKY 200V 160A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 160A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 160A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 200V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock6 600 |
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Global Power Technologies Group |
DIODE SCHOTTKY 150V 50A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 50A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 150V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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paquet: SOT-227-4, miniBLOC |
Stock7 600 |
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