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Infineon Technologies |
IGBT 600V 48A 250W TO220AB
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 48A
- Current - Collector Pulsed (Icm): 72A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
- Power - Max: 250W
- Switching Energy: 115µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 50nC
- Td (on/off) @ 25°C: 41ns/104ns
- Test Condition: 400V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 89ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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paquet: TO-220-3 |
Stock14 952 |
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Infineon Technologies |
MOD IGBT 600V 75A POWIR ECO 2
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 100A
- Power - Max: 330W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR ECO 2? Module
- Supplier Device Package: POWIR ECO 2?
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paquet: POWIR ECO 2? Module |
Stock6 048 |
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Infineon Technologies |
MOSFET COOL MOS SAWED WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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paquet: - |
Stock2 560 |
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Infineon Technologies |
MOSFET N-CH 85V 67A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 67A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3 280 |
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Infineon Technologies |
MOSFET N-CH 200V 17A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 140W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6 464 |
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Infineon Technologies |
MOSFET N-CH 30V 80A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2 624 |
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Infineon Technologies |
MOSFET N-CH 30V 35A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 032 |
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Infineon Technologies |
MOSFET N-CH 40V 14A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 7V
- Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 7V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock27 660 |
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Infineon Technologies |
MOSFET N-CH 650V 3.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 135µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 312 |
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Infineon Technologies |
MOSFET P-CH TO220-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
- Vgs (Max): +5V, -16V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock7 632 |
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Infineon Technologies |
MOSFET N-CH 30V 13.6A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock17 628 |
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Infineon Technologies |
MOSFET N-CH 200V 56A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4220pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock61 728 |
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Infineon Technologies |
MOSFET P-CH 55V 74A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock473 952 |
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Infineon Technologies |
MOSFET 2P-CH 20V 2.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock17 280 |
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Infineon Technologies |
TRANS PREBIAS NPN 200MW SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock3 344 |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 25A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 25A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: Die |
Stock4 960 |
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Infineon Technologies |
IC REG BUCK ADJ 4A SYNC 15QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.5V
- Voltage - Input (Max): 21V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 12V
- Current - Output: 4A
- Frequency - Switching: 600kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 15-PowerVQFN
- Supplier Device Package: PQFN (5x6)
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paquet: 15-PowerVQFN |
Stock5 744 |
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Infineon Technologies |
IC SW IPS 1CH HIGH SIDE DPAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 36V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.8A
- Rds On (Typ): 46 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: D-Pak
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paquet: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock28 596 |
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Infineon Technologies |
IC SW SMART OCTAL LOWSIDE PDSO36
- Switch Type: General Purpose
- Number of Outputs: 8
- Ratio - Input:Output: 1:8
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 4.5 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): 800 mOhm
- Input Type: -
- Features: Status Flag
- Fault Protection: Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: P-DSO-36
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paquet: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad |
Stock867 504 |
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Infineon Technologies |
IC HISIDE PWR SWITCH 4CH PDSO-20
- Switch Type: General Purpose
- Number of Outputs: 4
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5.5 V ~ 40 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3A
- Rds On (Typ): 70 mOhm
- Input Type: Non-Inverting
- Features: Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-20
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paquet: 20-SOIC (0.295", 7.50mm Width) |
Stock13 770 |
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Infineon Technologies |
IC BRIDGE DVR 3PH 600V 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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paquet: 28-SOIC (0.295", 7.50mm Width) |
Stock4 576 |
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Infineon Technologies |
IC DVR HALF BRIDGE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.3V
- Current - Peak Output (Source, Sink): 60mA, 130mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 200ns, 100ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock266 004 |
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Infineon Technologies |
IC CURRENT SENSE 16SOIC
- Function: Current Sense
- Sensing Method: -
- Accuracy: -
- Voltage - Input: 8 V ~ 20 V
- Current - Output: -
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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paquet: 16-SOIC (0.295", 7.50mm Width) |
Stock3 248 |
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Infineon Technologies |
IC OFFLINE CTRLR SMPS CM TO220
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 15V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 100kHz
- Power (Watts): 220W
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: TO-220-6 Formed Leads
- Supplier Device Package: PG-TO220-6
- Mounting Type: Through Hole
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paquet: TO-220-6 Formed Leads |
Stock5 904 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 80MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: EBI/EMI, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 63
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 1K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: -
- Oscillator Type: External
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 80-QFP
- Supplier Device Package: PG-MQFP-80
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paquet: 80-QFP |
Stock4 928 |
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Infineon Technologies |
IC HALL EFFECT SWITCH 3TO92
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock4 518 |
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Infineon Technologies |
OPTOISO 3.75KV 2CH PHVOLT 8-SMT
- Number of Channels: 2
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): -
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 5ms, 250µs (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Photovoltaic
- Voltage - Output (Max): 8V
- Current - Output / Channel: 1µA
- Voltage - Forward (Vf) (Typ): -
- Current - DC Forward (If) (Max): -
- Vce Saturation (Max): -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-SMD (300 mil)
- Supplier Device Package: 8-SMD
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paquet: 8-SMD (300 mil) |
Stock8 766 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-48-2
- Applications: -
- Voltage - Input: -
- Number of Outputs: -
- Voltage - Output: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock3 296 |
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Infineon Technologies |
IC REG LINEAR 5V 150MA 14DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 100mA
- Current - Output: 150mA
- Current - Quiescent (Iq): 1µA
- Current - Supply (Max): 2mA
- PSRR: 66dB (100Hz)
- Control Features: Enable, Reset
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-14
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paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock7 024 |
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Infineon Technologies |
IC REG LINEAR 5V 100MA 8DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 28V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 100mA
- Current - Output: 100mA
- Current - Quiescent (Iq): 300µA
- Current - Supply (Max): 3.6mA
- PSRR: -
- Control Features: -
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock2 608 |
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