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Infineon Technologies |
IGBT 600V 23A 99W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 23A
- Current - Collector Pulsed (Icm): 24A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
- Power - Max: 99W
- Switching Energy: 70µJ (on), 145µJ (off)
- Input Type: Standard
- Gate Charge: 19nC
- Td (on/off) @ 25°C: 30ns/95ns
- Test Condition: 400V, 8A, 47 Ohm, 15V
- Reverse Recovery Time (trr): 60ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2 000 |
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Infineon Technologies |
IGBT 600V 100A 333W TO220-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 100A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 333W
- Switching Energy: 2.6mJ
- Input Type: Standard
- Gate Charge: 310nC
- Td (on/off) @ 25°C: 26ns/299ns
- Test Condition: 400V, 50A, 7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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paquet: TO-220-3 |
Stock7 776 |
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Infineon Technologies |
MOSFET N-CH 80V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 155µA
- Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock3 888 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 160 |
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Infineon Technologies |
MOSFET N-CH 200V 3.7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock41 676 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock46 632 |
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Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock48 000 |
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Infineon Technologies |
MOSFET N-CH 30V 35A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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paquet: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2 976 |
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Infineon Technologies |
MOSFET N-CH 60V 27A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3 232 |
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Infineon Technologies |
MOSFET N-CH 100V 10A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock575 508 |
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Infineon Technologies |
TRANS NPN 80V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock6 352 |
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Infineon Technologies |
TRANS PREBIAS PNP 250MW SOT323-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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paquet: SC-70, SOT-323 |
Stock5 680 |
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Infineon Technologies |
TRANS PREBIAS PNP 300MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 330mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock3 536 |
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Infineon Technologies |
POWER DRIVER MOD 600V 10A LFRAME
- Type: IGBT
- Configuration: 3 Phase
- Current: 10A
- Voltage: 600V
- Voltage - Isolation: -
- Package / Case: -
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paquet: - |
Stock5 264 |
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Infineon Technologies |
DIODE SILICON 300V 10A WAFER
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 300V
- Capacitance @ Vr, F: 600pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 175°C
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paquet: Die |
Stock6 688 |
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Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 750mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 45V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Operating Temperature - Junction: 150°C (Max)
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paquet: SC-79, SOD-523 |
Stock1 137 378 |
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Infineon Technologies |
DIODE SWITCHING 50V SOT-143
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 70V
- Current - Average Rectified (Io): 140mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
- Current - Reverse Leakage @ Vr: 200nA @ 500V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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paquet: TO-253-4, TO-253AA |
Stock676 014 |
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Infineon Technologies |
IC CTRL/REG SYNC BUCK 20-SOIC
- Applications: Controller, Intel Pentium? III
- Voltage - Input: 5V, 12V
- Number of Outputs: 3
- Voltage - Output: 1.3 V ~ 3.5 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOIC
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paquet: 20-SOIC (0.295", 7.50mm Width) |
Stock4 432 |
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Infineon Technologies |
IC REG LINEAR 3.3V 500MA 10TSON
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 20V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.45V @ 500mA
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA ~ 31mA
- PSRR: 65dB (120Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Reverse Polarity
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 10-TFDFN Exposed Pad
- Supplier Device Package: PG-TSON-10
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paquet: 10-TFDFN Exposed Pad |
Stock2 800 |
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Infineon Technologies |
IC XPHASE W/OVP/TM CTRL 20L-MLPQ
- Applications: Processor
- Current - Supply: 10mA
- Voltage - Supply: 8.4 V ~ 21 V
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 20-VFQFN Exposed Pad
- Supplier Device Package: 20-MLPQ (4x4)
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paquet: 20-VFQFN Exposed Pad |
Stock6 064 |
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Infineon Technologies |
IC SWITCH HI-SIDE 1CH D2-PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 23A
- Rds On (Typ): 5.5 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Adjustable), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2Pak (SMD-220 5-Lead)
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paquet: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Stock6 288 |
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Infineon Technologies |
IC MOSFET LS DRIVER 5A SOT-223
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 35V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.4A
- Rds On (Typ): 130 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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paquet: TO-261-4, TO-261AA |
Stock234 168 |
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Infineon Technologies |
IC SWITCH SMART LOWSIDE TO252-3
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 31V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): 108 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-313
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 800 |
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Infineon Technologies |
IC SWITCH HISIDE SMART TO252-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.75 V ~ 43 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 5.8A
- Rds On (Typ): 50 mOhm
- Input Type: Non-Inverting
- Features: Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -30°C ~ 85°C (TA)
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: PG-TO252-5
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paquet: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock52 200 |
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Infineon Technologies |
IC BALLAST CONTROL INTEG 16-SOIC
- Type: Ballast Controller
- Frequency: 45.5kHz ~ 50.5kHz
- Voltage - Supply: 10.5 V ~ 16.5 V
- Current - Supply: 5.5mA
- Current - Output Source/Sink: -
- Dimming: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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paquet: 16-SOIC (0.154", 3.90mm Width) |
Stock13 188 |
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Infineon Technologies |
IC NETWORK TERMINATOR PDSO-20
- Function: High Voltage Power Controller
- Interface: ISDN
- Number of Circuits: 1
- Voltage - Supply: -
- Current - Supply: 700µA
- Power (Watts): -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: P-DSO-20
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paquet: 20-SOIC (0.433", 11.00mm Width) Exposed Pad |
Stock4 896 |
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Infineon Technologies |
IC LINE INTERFACE SLIC PLCC-28
- Function: Subscriber Line Interface Concept (SLIC)
- Interface: -
- Number of Circuits: 1
- Voltage - Supply: 5V
- Current - Supply: 2.8mA
- Power (Watts): 290mW
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 28-LCC (J-Lead)
- Supplier Device Package: P/PG-LCC-28
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paquet: 28-LCC (J-Lead) |
Stock4 544 |
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Infineon Technologies |
IC MCU 8BIT 32KB FLASH 48TQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: CAN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 48-TQFP
- Supplier Device Package: 48-TQFP (7x7)
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paquet: 48-TQFP |
Stock3 664 |
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Infineon Technologies |
MAGNETIC SWITCH UNIPOL PSSO-3-2
- Function: Unipolar Switch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 18mT Trip, 5mT Release
- Test Condition: 25°C
- Voltage - Supply: 3.8 V ~ 24 V
- Current - Supply (Max): 8mA
- Current - Output (Max): 100mA
- Output Type: Open Collector
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 3-SIP, SSO-3-02
- Supplier Device Package: P-SSO-3-2
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paquet: 3-SIP, SSO-3-02 |
Stock1 244 826 |
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Infineon Technologies |
IC SW SMART 6-CH LOWSIDE PDSO36
- Switch Type: General Purpose
- Number of Outputs: 6
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 4.5 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): 550mA, 1.1A
- Rds On (Typ): 250 mOhm, 450 mOhm
- Input Type: -
- Features: Status Flag
- Fault Protection: Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36
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paquet: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad |
Stock5 840 |
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