Page 10 - Produits Microsemi Corporation - Diodes - Redresseurs - Simples

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
APT20SCD120S	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 68A D3PAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 68A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400µA @ 1200V Capacitance @ Vr, F: 1135pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3 568	1200V	68A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	1135pF @ 0V, 1MHz	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	D3Pak	-55°C ~ 150°C
APT20SCD120B	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 68A Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 68A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400µA @ 1200V Capacitance @ Vr, F: 1135pF @ 0V, 1MHz Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock3 680	1200V	68A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	1135pF @ 0V, 1MHz	-	-	-	-55°C ~ 150°C
JANTX1N5623	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: 15pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	paquet: A, Axial	Stock4 544	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	15pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N5619	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: 25pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	paquet: A, Axial	Stock6 480	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N6642US	Microsemi Corporation	DIODE GEN PURP 75V 300MA D5D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	paquet: SQ-MELF, D	Stock3 728	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	40pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
JANTX1N5621	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: 20pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	paquet: A, Axial	Stock3 920	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 800V	20pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N4153-1	Microsemi Corporation	DIODE GEN PURP 75V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-204AH, DO-35, Axial	Stock6 456	75V	150mA (DC)	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
APTDF500U20G	Microsemi Corporation	DIODE MODULE 200V 500A LP4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 2.5mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: LP4 Supplier Device Package: LP4 Operating Temperature - Junction: -	paquet: LP4	Stock6 688	200V	500A	1.1V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	2.5mA @ 200V	-	Chassis Mount	LP4	LP4	-
JANTX1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500µA @ 400V Capacitance @ Vr, F: 35pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	paquet: SQ-MELF, A	Stock6 912	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500µA @ 400V	35pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
APT60D60BG	Microsemi Corporation	DIODE GEN PURP 600V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-247-2	Stock51 864	600V	60A	1.8V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
HSM8100JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	paquet: DO-214AB, SMC	Stock3 024	100V	8A	780mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
UPR5E3/TR7	Microsemi Corporation	DIODE GEN PURP 50V 2.5A DO216 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-216AA	Stock23 940	50V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 50V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
UPR10E3/TR7	Microsemi Corporation	DIODE GEN PURP 100V 2.5A DO216 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-216AA	Stock310 752	100V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
APT60S20BG	Microsemi Corporation	DIODE SCHOTTKY 200V 75A TO247 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 900mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-247-2	Stock4 112	200V	75A	900mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	1mA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 150°C
APT75DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 75A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 75A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31ns Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-247-2	Stock36 360	600V	75A	2.5V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	31ns	25µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
UPS115UE3/TR7	Microsemi Corporation	DIODE SCHOTTKY 15V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 15V Capacitance @ Vr, F: 150pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C	paquet: DO-216AA	Stock7 488	15V	1A	220mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	150pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
JANTX1N3164	Microsemi Corporation	DIODE GEN PURP 200V 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 940A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 200°C	paquet: DO-205AB, DO-9, Stud	Stock6 960	200V	300A	1.55V @ 940A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
JAN1N3174	Microsemi Corporation	DIODE GEN PURP 1KV 300A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 940A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 200°C	paquet: DO-205AB, DO-9, Stud	Stock3 760	1000V	300A	1.55V @ 940A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 1000V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
JANTX1N3289	Microsemi Corporation	DIODE GEN PURP 200V 100A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 310A Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 200V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	paquet: DO-205AA, DO-8, Stud	Stock5 232	200V	100A	1.55V @ 310A	Small Signal =< 200mA (Io), Any Speed	-	10mA @ 200V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
JANTX1N3890	Microsemi Corporation	DIODE GEN PURP 100V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 115pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock7 504	100V	12A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 100V	115pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
JANTXV1N6492	Microsemi Corporation	DIODE SCHOTTKY 45V 3.6A TO205AF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 560mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: 450pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-205AF Metal Can Supplier Device Package: TO-205AF (TO-39) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-205AF Metal Can	Stock7 728	45V	3.6A	560mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	450pF @ 5V, 1MHz	Through Hole	TO-205AF Metal Can	TO-205AF (TO-39)	-65°C ~ 175°C
JANTX1N6761-1	Microsemi Corporation	DIODE SCHOTTKY 100V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-204AL, DO-41, Axial	Stock7 744	100V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
CDS5711UR-1	Microsemi Corporation	DIODE SCHOTTKY DO-213AA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock6 144	-	-	-	-	-	-	-	-	-	-	-
JANS1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500µA @ 400V Capacitance @ Vr, F: 35pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	paquet: SQ-MELF, A	Stock7 216	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500µA @ 400V	35pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N5822	Microsemi Corporation	DIODE SCHOTTKY 40V 3A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 125°C	paquet: B, Axial	Stock3 360	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	B, Axial	-	-65°C ~ 125°C
JANTX1N6663	Microsemi Corporation	DIODE GEN PURP 600V 500MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50nA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-204AH, DO-35, Axial	Stock3 696	600V	500mA	1V @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50nA @ 600V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
MC5616	Microsemi Corporation	DIODE FAST REC S-PKG Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3000V Current - Average Rectified (Io): 570mA Voltage - Forward (Vf) (Max) @ If: 6V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 1µA @ 3000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: S, Axial Supplier Device Package: S, Axial Operating Temperature - Junction: -65°C ~ 150°C	paquet: S, Axial	Stock4 848	3000V	570mA	6V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	1µA @ 3000V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 150°C
HU20260	Microsemi Corporation	DIODE MODULE 600V 200A HALF-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	paquet: HALF-PAK	Stock4 608	600V	200A	1.35V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	50µA @ 600V	-	Chassis Mount	HALF-PAK	HALF-PAK	-
JANTX1N3671A	Microsemi Corporation	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-203AA, DO-4, Stud	Stock6 640	800V	12A	2.3V @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
JANTX1N1614	Microsemi Corporation	DIODE GEN PURP 200V 15A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock7 792	200V	15A	1.5V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 200V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C

APT20SCD120S

Microsemi Corporation

DIODE SCHOTTKY 1.2KV 68A D3PAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 68A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Capacitance @ Vr, F: 1135pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3 568

1200V

68A (DC)

1.8V @ 20A

No Recovery Time > 500mA (Io)

0ns

400µA @ 1200V

1135pF @ 0V, 1MHz

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

D3Pak

-55°C ~ 150°C

APT20SCD120B

Microsemi Corporation

DIODE SCHOTTKY 1.2KV 68A

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 68A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Capacitance @ Vr, F: 1135pF @ 0V, 1MHz
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

Stock3 680

1200V

68A (DC)

1.8V @ 20A

No Recovery Time > 500mA (Io)

0ns

400µA @ 1200V

1135pF @ 0V, 1MHz

-

-55°C ~ 150°C

JANTX1N5623

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

paquet: A, Axial

Stock4 544

1000V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

500nA @ 1000V

15pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

JANTXV1N5619

Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

paquet: A, Axial

Stock6 480

600V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

500nA @ 600V

25pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

JAN1N6642US

Microsemi Corporation

DIODE GEN PURP 75V 300MA D5D

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, D
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

paquet: SQ-MELF, D

Stock3 728

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

5ns

500nA @ 75V

40pF @ 0V, 1MHz

Surface Mount

SQ-MELF, D

D-5D

-65°C ~ 175°C

JANTX1N5621

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: 20pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

paquet: A, Axial

Stock3 920

800V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 800V

20pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

JAN1N4153-1

Microsemi Corporation

DIODE GEN PURP 75V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA (DC)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-204AH, DO-35, Axial

Stock6 456

75V

150mA (DC)

880mV @ 20mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

APTDF500U20G

Microsemi Corporation

DIODE MODULE 200V 500A LP4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 2.5mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: LP4
Operating Temperature - Junction: -

paquet: LP4

Stock6 688

200V

500A

1.1V @ 500A

Fast Recovery =< 500ns, > 200mA (Io)

70ns

2.5mA @ 200V

-

Chassis Mount

LP4

-

JANTX1N5617US

Microsemi Corporation

DIODE GEN PURP 400V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500µA @ 400V
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

paquet: SQ-MELF, A

Stock6 912

400V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500µA @ 400V

35pF @ 12V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

APT60D60BG

Microsemi Corporation

DIODE GEN PURP 600V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-247-2

Stock51 864

600V

60A

1.8V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

130ns

250µA @ 600V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

HSM8100JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 100V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C

paquet: DO-214AB, SMC

Stock3 024

100V

8A

780mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 175°C

UPR5E3/TR7

Microsemi Corporation

DIODE GEN PURP 50V 2.5A DO216

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-216AA

Stock23 940

50V

2.5A

975mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 50V

-

Surface Mount

DO-216AA

DO-216

-55°C ~ 150°C

UPR10E3/TR7

Microsemi Corporation

DIODE GEN PURP 100V 2.5A DO216

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-216AA

Stock310 752

100V

2.5A

975mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 100V

-

Surface Mount

DO-216AA

DO-216

-55°C ~ 150°C

APT60S20BG

Microsemi Corporation

DIODE SCHOTTKY 200V 75A TO247

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-247-2

Stock4 112

200V

75A

900mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

1mA @ 200V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 150°C

APT75DQ60BG

Microsemi Corporation

DIODE GEN PURP 600V 75A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 75A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-247-2

Stock36 360

600V

75A

2.5V @ 75A

Fast Recovery =< 500ns, > 200mA (Io)

31ns

25µA @ 600V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

UPS115UE3/TR7

Microsemi Corporation

DIODE SCHOTTKY 15V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 15V
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C

paquet: DO-216AA

Stock7 488

15V

1A

220mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 15V

150pF @ 5V, 1MHz

Surface Mount

DO-216AA

Powermite

-55°C ~ 150°C

JANTX1N3164

Microsemi Corporation

DIODE GEN PURP 200V 300A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 940A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 200°C

paquet: DO-205AB, DO-9, Stud

Stock6 960

200V

300A

1.55V @ 940A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 200V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 200°C

JAN1N3174

Microsemi Corporation

DIODE GEN PURP 1KV 300A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 940A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 200°C

paquet: DO-205AB, DO-9, Stud

Stock3 760

1000V

300A

1.55V @ 940A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 1000V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 200°C

JANTX1N3289

Microsemi Corporation

DIODE GEN PURP 200V 100A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 310A
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

paquet: DO-205AA, DO-8, Stud

Stock5 232

200V

100A

1.55V @ 310A

Small Signal =< 200mA (Io), Any Speed

-

10mA @ 200V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

JANTX1N3890

Microsemi Corporation

DIODE GEN PURP 100V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock7 504

100V

12A

1.5V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 100V

115pF @ 10V, 1MHz

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C

JANTXV1N6492

Microsemi Corporation

DIODE SCHOTTKY 45V 3.6A TO205AF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: 450pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-205AF Metal Can

Stock7 728

45V

3.6A

560mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

450pF @ 5V, 1MHz

Through Hole

TO-205AF Metal Can

TO-205AF (TO-39)

-65°C ~ 175°C

JANTX1N6761-1

Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-204AL, DO-41, Axial

Stock7 744

100V

1A

690mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

70pF @ 5V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

CDS5711UR-1

Microsemi Corporation

DIODE SCHOTTKY DO-213AA

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock6 144

-

JANS1N5617US

Microsemi Corporation

DIODE GEN PURP 400V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500µA @ 400V
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

paquet: SQ-MELF, A

Stock7 216

400V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500µA @ 400V

35pF @ 12V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

JAN1N5822

Microsemi Corporation

DIODE SCHOTTKY 40V 3A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 125°C

paquet: B, Axial

Stock3 360

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Through Hole

B, Axial

-

-65°C ~ 125°C

JANTX1N6663

Microsemi Corporation

DIODE GEN PURP 600V 500MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-204AH, DO-35, Axial

Stock3 696

600V

500mA

1V @ 400mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50nA @ 600V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

MC5616

Microsemi Corporation

DIODE FAST REC S-PKG

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3000V
Current - Average Rectified (Io): 570mA
Voltage - Forward (Vf) (Max) @ If: 6V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 1µA @ 3000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: S, Axial
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 150°C

paquet: S, Axial

Stock4 848

3000V

570mA

6V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

1µA @ 3000V

-

Through Hole

S, Axial

-65°C ~ 150°C

HU20260

Microsemi Corporation

DIODE MODULE 600V 200A HALF-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

paquet: HALF-PAK

Stock4 608

600V

200A

1.35V @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

130ns

50µA @ 600V

-

Chassis Mount

HALF-PAK

-

JANTX1N3671A

Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-203AA, DO-4, Stud

Stock6 640

800V

12A

2.3V @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 800V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

JANTX1N1614

Microsemi Corporation

DIODE GEN PURP 200V 15A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock7 792

200V

15A

1.5V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 200V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C