Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
|
paquet: A, Axial |
Stock8 124 |
|
600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
paquet: A, Axial |
Stock5 392 |
|
400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
paquet: A, Axial |
Stock12 024 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 175V 100MA DO35
|
paquet: DO-204AH, DO-35, Axial |
Stock7 272 |
|
175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA
|
paquet: DO-213AA |
Stock6 912 |
|
50V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 30A TO247
|
paquet: TO-247-2 |
Stock5 728 |
|
1000V | 30A | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 295ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
paquet: A, Axial |
Stock7 212 |
|
400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA AXIAL
|
paquet: D, Axial |
Stock7 032 |
|
50V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Through Hole | D, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GENERAL PURPOSE 800V 1A
|
paquet: A, Axial |
Stock6 112 |
|
800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A D5B
|
paquet: E-MELF |
Stock7 800 |
|
100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
paquet: A, Axial |
Stock6 396 |
|
200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 125V 300MA D5B
|
paquet: D, Axial |
Stock13 050 |
|
125V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 125V | - | Through Hole | D, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 10A TO220
|
paquet: TO-220-2 |
Stock6 256 |
|
1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-2 | TO-220 | - |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
|
paquet: A, Axial |
Stock6 132 |
|
600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 3A AXIAL
|
paquet: B, Axial |
Stock6 112 |
|
200V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL
|
paquet: A, Axial |
Stock7 560 |
|
800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA D5B
|
paquet: SQ-MELF, B |
Stock10 260 |
|
50V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 50nA @ 50V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SILICON 650V 32A TO220
|
paquet: TO-220-2 |
Stock7 200 |
|
650V | 32A | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 680pF @ 100mV, 1MHz | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A D5A
|
paquet: SQ-MELF, A |
Stock7 824 |
|
400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE SILICON 650V 17A TO220
|
paquet: TO-220-2 |
Stock7 120 |
|
650V | 17A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35
|
paquet: DO-204AH, DO-35, Axial |
Stock9 552 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 300V 30A TO247
|
paquet: TO-247-2 |
Stock6 080 |
|
300V | 30A | 1.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 250µA @ 300V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 30A TO220
|
paquet: TO-220-3 |
Stock6 064 |
|
1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 100V 15A SMD
|
paquet: 3-SMD, Flat Leads |
Stock6 512 |
|
100V | 15A | 1.27V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | 275pF @ 5V, 1MHz | Surface Mount | 3-SMD, Flat Leads | SMD | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
paquet: A, Axial |
Stock7 560 |
|
200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE STD REC 1500V S-PKG
|
paquet: S, Axial |
Stock7 884 |
|
1500V | 250mA | 5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1500V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL
|
paquet: B, Axial |
Stock6 348 |
|
400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE STD REC 1000V 1A
|
paquet: A, Axial |
Stock5 840 |
|
1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A D5A
|
paquet: SQ-MELF, A |
Stock6 800 |
|
400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
paquet: B, Axial |
Stock7 860 |
|
600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |