Page 55 - Produits Microsemi Corporation - Diodes - Redresseurs - Simples | Heisener Electronics
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Produits Microsemi Corporation - Diodes - Redresseurs - Simples

Dossiers 1 629
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MSASC25W100K
Microsemi Corporation

DIODE SCHOTTKY 100V 25A 2THINKEY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 2-ThinKey?
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: -
Stock5 904
100V
25A
910mV @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-
Surface Mount
-
2-ThinKey?
-65°C ~ 175°C
UTR4340
Microsemi Corporation

DIODE 400V 4A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: B, Axial
Stock3 584
400V
4A
1.1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
5µA @ 400V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTXV1N914UR
Microsemi Corporation

DIODE GEN PURP 75V 200MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-213AA
Stock3 472
75V
200mA
1.2V @ 50mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
2.8pF @ 1.5V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
JANTXV1N914
Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35 (DO-204AH)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-204AH, DO-35, Axial
Stock5 296
75V
200mA
1.2V @ 50mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
2.8pF @ 1.5V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 175°C
JANTXV1N6643US
Microsemi Corporation

DIODE GEN PURP 75V 300MA D-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, D
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: SQ-MELF, D
Stock3 472
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
JAN1N6643US
Microsemi Corporation

DIODE GEN PURP 50V 300MA D-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, D
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: SQ-MELF, D
Stock5 584
50V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
6ns
500nA @ 75V
5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
JANTX1N6642UBCA
Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-UB (3.09x2.45)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: 3-SMD, No Lead
Stock7 280
75V
300mA (DC)
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
-
Surface Mount
3-SMD, No Lead
3-UB (3.09x2.45)
-65°C ~ 175°C
JAN1N6642UBCA
Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-UB (3.09x2.45)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: 3-SMD, No Lead
Stock2 688
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
500nA @ 75V
5pF @ 0V, 1MHz
Surface Mount
3-SMD, No Lead
3-UB (3.09x2.45)
-65°C ~ 175°C
JANTXV1N6642UB
Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-UB (3.09x2.45)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: 3-SMD, No Lead
Stock5 808
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
-
Surface Mount
3-SMD, No Lead
3-UB (3.09x2.45)
-65°C ~ 175°C