Page 53 - Produits Microsemi Corporation - Diodes - Redresseurs - Simples

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N6623	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 150°C	paquet: A, Axial	Stock3 536	800V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 800V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 150°C
JAN1N6622US	Microsemi Corporation	DIODE GEN PURP 660V 2A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 660V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock6 128	660V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 660V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6622U	Microsemi Corporation	DIODE GEN PURP 600V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock6 608	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6622U	Microsemi Corporation	DIODE GEN PURP 600V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock3 216	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6622U	Microsemi Corporation	DIODE GEN PURP 600V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock6 096	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6621U	Microsemi Corporation	DIODE GEN PURP 400V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock5 712	400V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6621U	Microsemi Corporation	DIODE GEN PURP 400V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock4 240	400V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6621U	Microsemi Corporation	DIODE GEN PURP 400V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock3 696	400V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6620U	Microsemi Corporation	DIODE GEN PURP 200V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock2 100	200V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6620U	Microsemi Corporation	DIODE GEN PURP 200V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock4 352	200V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6620U	Microsemi Corporation	DIODE GEN PURP 200V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	paquet: SQ-MELF, A	Stock7 744	200V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6081	Microsemi Corporation	DIODE GEN PURP 150V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: G, Axial Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C	paquet: G, Axial	Stock4 048	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 150V	-	Through Hole	G, Axial	G, Axial	-65°C ~ 155°C
JANTX1N6081	Microsemi Corporation	DIODE GEN PURP 150V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C	paquet: A, Axial	Stock3 152	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 155°C
JANTXV1N5554US	Microsemi Corporation	DIODE GEN PURP 1KV 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	paquet: SQ-MELF, B	Stock4 192	1000V	3A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5552US	Microsemi Corporation	DIODE GEN PURP 600V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	paquet: SQ-MELF, B	Stock4 416	600V	3A	1.2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5550US	Microsemi Corporation	DIODE GEN PURP 200V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	paquet: SQ-MELF, B	Stock3 280	200V	3A	1.2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTXV1N5187	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	paquet: B, Axial	Stock3 888	100V	3A	1.5V @ 9A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 100V	-	Through Hole	B, Axial	Axial	-65°C ~ 175°C
JANTX1N4459R	Microsemi Corporation	DIODE GEN PURP 1KV 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock7 744	1000V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JAN1N4459R	Microsemi Corporation	DIODE GEN PURP 1KV 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock5 312	1000V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JANTX1N4459	Microsemi Corporation	DIODE GEN PURP 1KV 15A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock3 600	1000V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JAN1N4459	Microsemi Corporation	DIODE GEN PURP 1KV 15A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock3 824	1000V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JANTX1N4458R	Microsemi Corporation	DIODE GEN PURP 800V 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock5 552	800V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JAN1N4458R	Microsemi Corporation	DIODE GEN PURP 800V 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock3 312	800V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JANTX1N4458	Microsemi Corporation	DIODE GEN PURP 800V 15A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock6 992	800V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JAN1N4458	Microsemi Corporation	DIODE GEN PURP 800V 15A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AA, DO-4, Stud	Stock6 288	800V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JANTXV1N4148UB2	Microsemi Corporation	DIODE GEN PURP 75V 200MA SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 200°C	paquet: 3-SMD, No Lead	Stock7 904	75V	200mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	UB	-65°C ~ 200°C
JANTXV1N4148UB	Microsemi Corporation	DIODE GEN PURP 75V 200MA SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 200°C	paquet: 3-SMD, No Lead	Stock7 856	75V	200mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	UB	-65°C ~ 200°C
JANTXV1N3768R	Microsemi Corporation	DIODE GEN PURP 1KV 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AB, DO-5, Stud	Stock5 168	1000V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTX1N3768R	Microsemi Corporation	DIODE GEN PURP 1KV 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AB, DO-5, Stud	Stock7 760	1000V	35A	2.3V @ 500A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JAN1N3768R	Microsemi Corporation	DIODE GEN PURP 1KV 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	paquet: DO-203AB, DO-5, Stud	Stock2 032	1000V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C

JAN1N6623

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C

paquet: A, Axial

Stock3 536

800V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 800V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 150°C

JAN1N6622US

Microsemi Corporation

DIODE GEN PURP 660V 2A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 660V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock6 128

660V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 660V

10pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTXV1N6622U

Microsemi Corporation

DIODE GEN PURP 600V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock6 608

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTX1N6622U

Microsemi Corporation

DIODE GEN PURP 600V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock3 216

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6622U

Microsemi Corporation

DIODE GEN PURP 600V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock6 096

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTXV1N6621U

Microsemi Corporation

DIODE GEN PURP 400V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock5 712

400V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTX1N6621U

Microsemi Corporation

DIODE GEN PURP 400V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock4 240

400V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6621U

Microsemi Corporation

DIODE GEN PURP 400V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock3 696

400V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTXV1N6620U

Microsemi Corporation

DIODE GEN PURP 200V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock2 100

200V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 200V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTX1N6620U

Microsemi Corporation

DIODE GEN PURP 200V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock4 352

200V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 200V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6620U

Microsemi Corporation

DIODE GEN PURP 200V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

paquet: SQ-MELF, A

Stock7 744

200V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 200V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTXV1N6081

Microsemi Corporation

DIODE GEN PURP 150V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: G, Axial
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C

paquet: G, Axial

Stock4 048

150V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 150V

-

Through Hole

G, Axial

-65°C ~ 155°C

JANTX1N6081

Microsemi Corporation

DIODE GEN PURP 150V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C

paquet: A, Axial

Stock3 152

150V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 150V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 155°C

JANTXV1N5554US

Microsemi Corporation

DIODE GEN PURP 1KV 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

paquet: SQ-MELF, B

Stock4 192

1000V

3A

1.3V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 1000V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

JAN1N5552US

Microsemi Corporation

DIODE GEN PURP 600V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

paquet: SQ-MELF, B

Stock4 416

600V

3A

1.2V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

1µA @ 600V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

JAN1N5550US

Microsemi Corporation

DIODE GEN PURP 200V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

paquet: SQ-MELF, B

Stock3 280

200V

3A

1.2V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

1µA @ 200V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

JANTXV1N5187

Microsemi Corporation

DIODE GEN PURP 100V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

paquet: B, Axial

Stock3 888

100V

3A

1.5V @ 9A

Standard Recovery >500ns, > 200mA (Io)

-

2µA @ 100V

-

Through Hole

B, Axial

Axial

-65°C ~ 175°C

JANTX1N4459R

Microsemi Corporation

DIODE GEN PURP 1KV 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock7 744

1000V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JAN1N4459R

Microsemi Corporation

DIODE GEN PURP 1KV 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock5 312

1000V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JANTX1N4459

Microsemi Corporation

DIODE GEN PURP 1KV 15A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock3 600

1000V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JAN1N4459

Microsemi Corporation

DIODE GEN PURP 1KV 15A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock3 824

1000V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JANTX1N4458R

Microsemi Corporation

DIODE GEN PURP 800V 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock5 552

800V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JAN1N4458R

Microsemi Corporation

DIODE GEN PURP 800V 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock3 312

800V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JANTX1N4458

Microsemi Corporation

DIODE GEN PURP 800V 15A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock6 992

800V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JAN1N4458

Microsemi Corporation

DIODE GEN PURP 800V 15A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AA, DO-4, Stud

Stock6 288

800V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JANTXV1N4148UB2

Microsemi Corporation

DIODE GEN PURP 75V 200MA SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 200°C

paquet: 3-SMD, No Lead

Stock7 904

75V

200mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

4pF @ 0V, 1MHz

Surface Mount

3-SMD, No Lead

UB

-65°C ~ 200°C

JANTXV1N4148UB

Microsemi Corporation

DIODE GEN PURP 75V 200MA SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 200°C

paquet: 3-SMD, No Lead

Stock7 856

75V

200mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

4pF @ 0V, 1MHz

Surface Mount

3-SMD, No Lead

UB

-65°C ~ 200°C

JANTXV1N3768R

Microsemi Corporation

DIODE GEN PURP 1KV 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AB, DO-5, Stud

Stock5 168

1000V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTX1N3768R

Microsemi Corporation

DIODE GEN PURP 1KV 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AB, DO-5, Stud

Stock7 760

1000V

35A

2.3V @ 500A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JAN1N3768R

Microsemi Corporation

DIODE GEN PURP 1KV 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

paquet: DO-203AB, DO-5, Stud

Stock2 032

1000V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C