Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
MOSFET N-CH 200V 100A TO-264
|
paquet: TO-264-3, TO-264AA |
Stock22 800 |
|
MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | ±30V | - | 520W (Tc) | 22 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 600V 60A D3PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4 960 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 3.9V @ 3mA | 190nC @ 10V | 7200pF @ 25V | ±30V | Super Junction | 431W (Tc) | 45 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 800V 48A T-MAX
|
paquet: TO-247-3 Variant |
Stock5 344 |
|
MOSFET (Metal Oxide) | 800V | 49A (Tc) | 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | ±30V | - | 1135W (Tc) | 190 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 500V 75A TO-247
|
paquet: TO-247-3 Variant |
Stock6 512 |
|
MOSFET (Metal Oxide) | 500V | 75A (Tc) | 10V | 5V @ 2.5mA | 290nC @ 10V | 11600pF @ 25V | ±30V | - | 1040W (Tc) | 75 mOhm @ 37A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 600V 66A T-MAX
|
paquet: TO-247-3 Variant |
Stock6 224 |
|
MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 5V @ 2.5mA | 330nC @ 10V | 13190pF @ 25V | ±30V | - | 1135W (Tc) | 100 mOhm @ 33A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 1000V 30A TO264
|
paquet: TO-264-3, TO-264AA |
Stock6 032 |
|
MOSFET (Metal Oxide) | 1000V | 30A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | ±30V | - | 1040W (Tc) | 460 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 500V 75A TO-264
|
paquet: TO-264-3, TO-264AA |
Stock7 760 |
|
MOSFET (Metal Oxide) | 500V | 75A (Tc) | 10V | 5V @ 2.5mA | 290nC @ 10V | 11600pF @ 25V | ±30V | - | 1040W (Tc) | 75 mOhm @ 37A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
POWER MOSFET - SIC
|
paquet: TO-247-3 |
Stock4 192 |
|
SiCFET (Silicon Carbide) | 700V | 65A (Tc) | 20V | 2.5V @ 1mA | 125nC @ 20V | - | +25V, -10V | - | 300W (Tc) | 70 mOhm @ 32.5A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 500V 84A TO-247
|
paquet: TO-247-3 Variant |
Stock3 200 |
|
MOSFET (Metal Oxide) | 500V | 84A (Tc) | 10V | 5V @ 2.5mA | 340nC @ 10V | 13500pF @ 25V | ±30V | - | 1135W (Tc) | 65 mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 1000V 12A TO-247
|
paquet: TO-247-3 |
Stock6 880 |
|
MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 5V @ 1mA | 71nC @ 10V | 1969pF @ 25V | ±30V | - | 298W (Tc) | 950 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 800V 41A T-MAX
|
paquet: TO-247-3 Variant |
Stock7 856 |
|
MOSFET (Metal Oxide) | 800V | 41A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | ±30V | - | 1040W (Tc) | 240 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 1000V 32A T-MAX
|
paquet: TO-247-3 Variant |
Stock4 016 |
|
MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | ±30V | - | 1040W (Tc) | 380 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 500V 75A T-MAX
|
paquet: TO-247-3 Variant |
Stock3 664 |
|
MOSFET (Metal Oxide) | 500V | 75A (Tc) | 10V | 5V @ 2.5mA | 290nC @ 10V | 11600pF @ 25V | ±30V | - | 1040W (Tc) | 75 mOhm @ 37A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 650V 97A TO-264
|
paquet: TO-264-3, TO-264AA |
Stock2 432 |
|
MOSFET (Metal Oxide) | 650V | 97A (Tc) | 10V | 3.5V @ 2.96mA | 300nC @ 10V | 7650pF @ 25V | ±20V | - | 862W (Tc) | 41 mOhm @ 48.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 800V 43A T-MAX
|
paquet: TO-247-3 Variant |
Stock2 928 |
|
MOSFET (Metal Oxide) | 800V | 43A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | ±30V | - | 1040W (Tc) | 210 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 600V 60A TO-247
|
paquet: TO-247-3 Variant |
Stock7 744 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | - | 1040W (Tc) | 110 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 800V 43A TO-264
|
paquet: TO-264-3, TO-264AA |
Stock6 576 |
|
MOSFET (Metal Oxide) | 800V | 43A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | ±30V | - | 1040W (Tc) | 210 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 500V 46A T-MAX
|
paquet: TO-247-3 Variant |
Stock6 192 |
|
MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 5V @ 2.5mA | 95nC @ 10V | 4360pF @ 25V | ±30V | - | 520W (Tc) | 100 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 600V 60A TO-264
|
paquet: TO-264-3, TO-264AA |
Stock4 480 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | - | 1040W (Tc) | 110 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
POWER MOSFET - SIC
|
paquet: D-3 Module |
Stock7 504 |
|
SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | - | 2.5V @ 1mA | 72nC @ 20V | - | - | - | 175W (Tc) | 175 mOhm @ 10A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | D3 | D-3 Module |
||
Microsemi Corporation |
MOSFET N-CH 650V 47A TO-247
|
paquet: TO-247-3 |
Stock6 544 |
|
MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 3.9V @ 2.7mA | 260nC @ 10V | 7015pF @ 25V | ±20V | - | 417W (Tc) | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 600V 60A D3PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7 760 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 3.9V @ 3mA | 190nC @ 10V | 7200pF @ 25V | ±30V | Super Junction | 431W (Tc) | 45 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 600V 56A T-MAX
|
paquet: TO-247-3 Variant |
Stock2 464 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | - | 1040W (Tc) | 130 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 500V 35A D3PAK
|
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock4 000 |
|
MOSFET (Metal Oxide) | 500V | 35A (Tc) | 10V | 5V @ 1mA | 72nC @ 10V | 3261pF @ 25V | ±30V | - | 403W (Tc) | 140 mOhm @ 17.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Microsemi Corporation |
MOSFET N-CH 600V 56A TO-264
|
paquet: TO-264-3, TO-264AA |
Stock6 880 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | - | 1040W (Tc) | 130 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 500V 56A TO-264
|
paquet: TO-264-3, TO-264AA |
Stock6 992 |
|
MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | ±30V | - | 780W (Tc) | 100 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 300V 48A TO-247
|
paquet: TO-247-3 |
Stock9 864 |
|
MOSFET (Metal Oxide) | 300V | 48A (Tc) | 10V | 4V @ 1mA | 225nC @ 10V | 5870pF @ 25V | ±30V | - | 370W (Tc) | 70 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 650V 47A TO-247
|
paquet: - |
Stock6 672 |
|
- | - | - | 10V | - | - | - | ±20V | - | 417W (Tc) | - | -55°C ~ 150°C (TJ) | - | - | - |
||
Microsemi Corporation |
MOSFET N-CH 600V 36A TO-247
|
paquet: TO-247-3 |
Stock4 992 |
|
MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 5V @ 1mA | 165nC @ 10V | 6640pF @ 25V | ±30V | - | 624W (Tc) | 190 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 500V 30A TO-247
|
paquet: TO-247-3 |
Stock6 544 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 5V @ 1mA | 72nC @ 10V | 2833pF @ 25V | ±30V | - | 329W (Tc) | 160 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |