Page 9 - Produits Microsemi Corporation - Transistors - FET, MOSFET - Simples | Heisener Electronics
Contactez nous
SalesDept@heisener.com 86-755-83210559-819
Connexion/S'inscrire
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Chariot 0

Produits Microsemi Corporation - Transistors - FET, MOSFET - Simples

Dossiers 613
Page  9/21
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT50M50JLL
Microsemi Corporation

MOSFET N-CH 500V 71A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 71A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 35.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock4 576
MOSFET (Metal Oxide)
500V
71A
10V
5V @ 5mA
200nC @ 10V
10550pF @ 25V
±30V
-
595W (Tc)
50 mOhm @ 35.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT5010JVRU3
Microsemi Corporation

MOSFET N-CH 500V 44A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 44A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 312nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7410pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock4 640
MOSFET (Metal Oxide)
500V
44A
10V
4V @ 2.5mA
312nC @ 10V
7410pF @ 25V
±30V
-
450W (Tc)
100 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT80SM120S
Microsemi Corporation

POWER MOSFET - SIC

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3Pak
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 064
SiCFET (Silicon Carbide)
1200V
80A (Tc)
20V
2.5V @ 1mA
235nC @ 20V
-
+25V, -10V
-
625W (Tc)
55 mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3Pak
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APTML10UM09R004T1AG
Microsemi Corporation

MOSFET N-CH 100V 154A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
paquet: SP1
Stock3 216
MOSFET (Metal Oxide)
100V
154A (Tc)
10V
4V @ 2.5mA
-
9875pF @ 25V
±30V
-
480W (Tc)
10 mOhm @ 69.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTML20UM18R010T1AG
Microsemi Corporation

MOSFET N-CH 200V 109A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9880pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 50A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
paquet: SP1
Stock5 920
MOSFET (Metal Oxide)
200V
109A (Tc)
10V
4V @ 2.5mA
-
9880pF @ 25V
±30V
-
480W (Tc)
19 mOhm @ 50A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APT10035JLL
Microsemi Corporation

MOSFET N-CH 1000V 25A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock5 856
MOSFET (Metal Oxide)
1000V
25A
10V
5V @ 2.5mA
186nC @ 10V
5185pF @ 25V
±30V
-
520W (Tc)
350 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT80SM120B
Microsemi Corporation

POWER MOSFET - SIC

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 555W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock6 400
SiCFET (Silicon Carbide)
1200V
80A (Tc)
20V
2.5V @ 1mA
235nC @ 20V
-
+25V, -10V
-
555W (Tc)
55 mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
APTC60DAM24T1G
Microsemi Corporation

MOSFET N-CH 600V 95A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 462W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
paquet: SP1
Stock5 440
MOSFET (Metal Oxide)
600V
95A
10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
±20V
-
462W (Tc)
24 mOhm @ 47.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APT60M75L2FLLG
Microsemi Corporation

MOSFET N-CH 600V 73A TO-264MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 893W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX? [L2]
  • Package / Case: TO-264-3, TO-264AA
paquet: TO-264-3, TO-264AA
Stock3 840
MOSFET (Metal Oxide)
600V
73A (Tc)
10V
5V @ 5mA
195nC @ 10V
8930pF @ 25V
±30V
-
893W (Tc)
75 mOhm @ 36.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
264 MAX? [L2]
TO-264-3, TO-264AA
APT60M75L2LLG
Microsemi Corporation

MOSFET N-CH 600V 73A TO-264MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 893W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX? [L2]
  • Package / Case: TO-264-3, TO-264AA
paquet: TO-264-3, TO-264AA
Stock2 416
MOSFET (Metal Oxide)
600V
73A (Tc)
10V
5V @ 5mA
195nC @ 10V
8930pF @ 25V
±30V
-
893W (Tc)
75 mOhm @ 36.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
264 MAX? [L2]
TO-264-3, TO-264AA
APT12057B2FLLG
Microsemi Corporation

MOSFET N-CH 1200V 22A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
paquet: TO-247-3 Variant
Stock4 176
MOSFET (Metal Oxide)
1200V
22A (Tc)
10V
5V @ 2.5mA
185nC @ 10V
5155pF @ 25V
±30V
-
690W (Tc)
570 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APTM120DA30T1G
Microsemi Corporation

MOSFET N-CH 1200V 31A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 31A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 657W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 25A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
paquet: SP1
Stock6 496
MOSFET (Metal Oxide)
1200V
31A
10V
5V @ 2.5mA
560nC @ 10V
14560pF @ 25V
±30V
-
657W (Tc)
360 mOhm @ 25A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APT33N90JCCU2
Microsemi Corporation

MOSFET N-CH 900V 33A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 33A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock6 960
MOSFET (Metal Oxide)
900V
33A
10V
3.5V @ 3mA
270nC @ 10V
6800pF @ 100V
±20V
Super Junction
290W (Tc)
120 mOhm @ 26A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT6013JLL
Microsemi Corporation

MOSFET N-CH 600V 39A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock5 152
MOSFET (Metal Oxide)
600V
39A
10V
5V @ 2.5mA
130nC @ 10V
5630pF @ 25V
±30V
-
460W (Tc)
130 mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT70SM70J
Microsemi Corporation

POWER MOSFET - SIC

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock2 032
SiCFET (Silicon Carbide)
700V
49A (Tc)
20V
2.5V @ 1mA
125nC @ 20V
-
+25V, -10V
-
165W (Tc)
70 mOhm @ 32.5A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT30M40JVFR
Microsemi Corporation

MOSFET N-CH 300V 70A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock2 688
MOSFET (Metal Oxide)
300V
70A
10V
4V @ 2.5mA
425nC @ 10V
10200pF @ 25V
±30V
-
450W (Tc)
40 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT29F80J
Microsemi Corporation

MOSFET N-CH 800V 31A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 31A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 303nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9326pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock7 856
MOSFET (Metal Oxide)
800V
31A
10V
5V @ 2.5mA
303nC @ 10V
9326pF @ 25V
±30V
-
543W (Tc)
210 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT60M80L2VRG
Microsemi Corporation

MOSFET N-CH 600V 65A TO-264MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 833W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 32.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX? [L2]
  • Package / Case: TO-264-3, TO-264AA
paquet: TO-264-3, TO-264AA
Stock7 696
MOSFET (Metal Oxide)
600V
65A (Tc)
10V
4V @ 5mA
590nC @ 10V
13300pF @ 25V
±30V
-
833W (Tc)
80 mOhm @ 32.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
264 MAX? [L2]
TO-264-3, TO-264AA
APT8020B2LLG
Microsemi Corporation

MOSFET N-CH 800V 38A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
paquet: TO-247-3 Variant
Stock7 376
MOSFET (Metal Oxide)
800V
38A (Tc)
10V
5V @ 2.5mA
195nC @ 10V
5200pF @ 25V
±30V
-
694W (Tc)
200 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APT12057LFLLG
Microsemi Corporation

MOSFET N-CH 1200V 22A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
paquet: TO-264-3, TO-264AA
Stock4 288
MOSFET (Metal Oxide)
1200V
22A (Tc)
10V
5V @ 2.5mA
185nC @ 10V
5155pF @ 25V
±30V
-
690W (Tc)
570 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT10035B2FLLG
Microsemi Corporation

MOSFET N-CH 1000V 28A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 370 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
paquet: TO-247-3 Variant
Stock3 680
MOSFET (Metal Oxide)
1000V
28A (Tc)
10V
5V @ 2.5mA
186nC @ 10V
5185pF @ 25V
±30V
-
690W (Tc)
370 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APT20M120JCU3
Microsemi Corporation

MOSFET N-CH 1200V 20A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock6 896
MOSFET (Metal Oxide)
1200V
20A
10V
5V @ 2.5mA
300nC @ 10V
7736pF @ 25V
±30V
-
543W (Tc)
672 mOhm @ 14A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT20M120JCU2
Microsemi Corporation

MOSFET N-CH 1200V 20A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock5 968
MOSFET (Metal Oxide)
1200V
20A
10V
5V @ 2.5mA
300nC @ 10V
7736pF @ 25V
±30V
-
543W (Tc)
672 mOhm @ 14A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT58M50J
Microsemi Corporation

MOSFET N-CH 500V 58A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock7 728
MOSFET (Metal Oxide)
500V
58A
10V
5V @ 2.5mA
340nC @ 10V
13500pF @ 25V
±30V
-
540W (Tc)
65 mOhm @ 42A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT58F50J
Microsemi Corporation

MOSFET N-CH 500V 58A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock5 808
MOSFET (Metal Oxide)
500V
58A
10V
5V @ 2.5mA
340nC @ 10V
13500pF @ 25V
±30V
-
540W (Tc)
65 mOhm @ 42A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT26M100JCU3
Microsemi Corporation

MOSFET N-CH 1000V 26A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock7 520
MOSFET (Metal Oxide)
1000V
26A (Tc)
10V
5V @ 2.5mA
305nC @ 10V
7868pF @ 25V
±30V
-
543W (Tc)
396 mOhm @ 18A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT26M100JCU2
Microsemi Corporation

MOSFET N-CH 1000V 26A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock5 088
MOSFET (Metal Oxide)
1000V
26A (Tc)
10V
5V @ 2.5mA
305nC @ 10V
7868pF @ 25V
±30V
-
543W (Tc)
396 mOhm @ 18A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT12057B2LLG
Microsemi Corporation

MOSFET N-CH 1200V 22A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock2 576
MOSFET (Metal Oxide)
1200V
22A (Tc)
10V
5V @ 2.5mA
290nC @ 10V
6200pF @ 25V
±30V
-
690W (Tc)
570 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3
APT30M40JVR
Microsemi Corporation

MOSFET N-CH 300V 70A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock2 192
MOSFET (Metal Oxide)
300V
70A
10V
4V @ 2.5mA
425nC @ 10V
10200pF @ 25V
±30V
-
450W (Tc)
40 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT50N60JCCU2
Microsemi Corporation

MOSFET N-CH 600V 50A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock7 616
MOSFET (Metal Oxide)
600V
50A
10V
3.9V @ 3mA
150nC @ 10V
6800pF @ 25V
±20V
-
290W (Tc)
45 mOhm @ 22.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC