Page 14 - Produits NXP - Transistors - FET, MOSFET - Simples | Heisener Electronics
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Produits NXP - Transistors - FET, MOSFET - Simples

Dossiers 486
Page  14/17
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BUK9E6R1-100E,127
NXP

MOSFET N-CH 100V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17460pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock6 928
MOSFET (Metal Oxide)
100V
120A (Tc)
5V, 10V
2.1V @ 1mA
133nC @ 5V
17460pF @ 25V
±10V
-
349W (Tc)
5.9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E4R9-60E,127
NXP

MOSFET N-CH 60V 100A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9710pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 234W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock7 888
MOSFET (Metal Oxide)
60V
100A (Tc)
5V, 10V
2.1V @ 1mA
65nC @ 5V
9710pF @ 25V
±10V
-
234W (Tc)
4.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E4R4-80E,127
NXP

MOSFET N-CH 80V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17130pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock2 752
MOSFET (Metal Oxide)
80V
120A (Tc)
5V, 10V
2.1V @ 1mA
123nC @ 5V
17130pF @ 25V
±10V
-
349W (Tc)
4.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E3R7-60E,127
NXP

MOSFET N-CH 60V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13490pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 293W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock3 776
MOSFET (Metal Oxide)
60V
120A (Tc)
5V, 10V
2.1V @ 1mA
95nC @ 5V
13490pF @ 25V
±10V
-
293W (Tc)
3.4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E3R2-40E,127
NXP

MOSFET N-CH 40V 100A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 69.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9150pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 234W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock5 360
MOSFET (Metal Oxide)
40V
100A (Tc)
5V, 10V
2.1V @ 1mA
69.5nC @ 5V
9150pF @ 25V
±10V
-
234W (Tc)
2.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E2R8-60E,127
NXP

MOSFET N-CH 60V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17450pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock4 080
MOSFET (Metal Oxide)
60V
120A (Tc)
5V, 10V
2.1V @ 1mA
120nC @ 5V
17450pF @ 25V
±10V
-
349W (Tc)
2.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E2R3-40E,127
NXP

MOSFET N-CH 40V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 293W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock2 672
MOSFET (Metal Oxide)
40V
120A (Tc)
5V, 10V
2.1V @ 1mA
87.8nC @ 5V
13160pF @ 25V
±10V
-
293W (Tc)
2.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E1R9-40E,127
NXP

MOSFET N-CH 40V I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock4 928
MOSFET (Metal Oxide)
40V
-
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E1R6-30E,127
NXP

MOSFET N-CH 30V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock3 248
MOSFET (Metal Oxide)
30V
120A (Tc)
5V, 10V
2.1V @ 1mA
113nC @ 5V
16150pF @ 25V
±10V
-
349W (Tc)
1.4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK9E15-60E,127
NXP

MOSFET N-CH 60V 54A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock6 256
MOSFET (Metal Oxide)
60V
54A (Tc)
5V, 10V
2.1V @ 1mA
20.5nC @ 5V
2651pF @ 25V
±10V
-
96W (Tc)
13 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK958R5-40E,127
NXP

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock3 264
MOSFET (Metal Oxide)
40V
75A (Tc)
5V, 10V
2.1V @ 1mA
20.9nC @ 5V
2600pF @ 25V
±10V
-
96W (Tc)
6.6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK956R1-100E,127
NXP

MOSFET N-CH 100V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17460pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock4 096
MOSFET (Metal Oxide)
100V
120A (Tc)
5V, 10V
2.1V @ 1mA
133nC @ 5V
17460pF @ 25V
±10V
-
349W (Tc)
5.9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK954R4-80E,127
NXP

MOSFET N-CH 80V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17130pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock4 880
MOSFET (Metal Oxide)
80V
120A (Tc)
5V, 10V
2.1V @ 1mA
123nC @ 5V
17130pF @ 25V
±10V
-
349W (Tc)
4.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK953R2-40E,127
NXP

MOSFET N-CH 40V 100A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 69.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9150pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 234W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock3 680
MOSFET (Metal Oxide)
40V
100A (Tc)
5V, 10V
2.1V @ 1mA
69.5nC @ 5V
9150pF @ 25V
±10V
-
234W (Tc)
2.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK952R8-60E,127
NXP

MOSFET N-CH 60V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17450pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock5 408
MOSFET (Metal Oxide)
60V
120A (Tc)
5V, 10V
2.1V @ 1mA
120nC @ 5V
17450pF @ 25V
±10V
-
349W (Tc)
2.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK952R3-40E,127
NXP

MOSFET N-CH 40V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 293W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock6 448
MOSFET (Metal Oxide)
40V
120A (Tc)
5V, 10V
2.1V @ 1mA
87.8nC @ 5V
13160pF @ 25V
±10V
-
293W (Tc)
2.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK951R9-40E,127
NXP

MOSFET N-CH 40V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 16400pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock4 864
MOSFET (Metal Oxide)
40V
120A (Tc)
5V, 10V
2.1V @ 1mA
120nC @ 5V
16400pF @ 25V
±10V
-
349W (Tc)
1.7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK951R6-30E,127
NXP

MOSFET N-CH 30V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock3 888
MOSFET (Metal Oxide)
30V
120A (Tc)
5V, 10V
2.1V @ 1mA
113nC @ 5V
16150pF @ 25V
±10V
-
349W (Tc)
1.4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK9515-60E,127
NXP

MOSFET N-CH 60V 54A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock6 512
MOSFET (Metal Oxide)
60V
54A (Tc)
5V, 10V
2.1V @ 1mA
20.5nC @ 5V
2651pF @ 25V
±10V
-
96W (Tc)
13 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK7E4R0-80E,127
NXP

MOSFET N-CH 80V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12030pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock4 496
MOSFET (Metal Oxide)
80V
120A (Tc)
10V
4V @ 1mA
169nC @ 10V
12030pF @ 25V
±20V
-
349W (Tc)
4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK7E1R6-30E,127
NXP

MOSFET N-CH 30V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11960pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock5 664
MOSFET (Metal Oxide)
30V
120A (Tc)
10V
4V @ 1mA
154nC @ 10V
11960pF @ 25V
±20V
-
349W (Tc)
1.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BUK754R7-60E,127
NXP

MOSFET N-CH 60V 100A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6230pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 234W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock6 944
MOSFET (Metal Oxide)
60V
100A (Tc)
10V
4V @ 1mA
82nC @ 10V
6230pF @ 25V
±20V
-
234W (Tc)
4.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK753R5-60E,127
NXP

MOSFET N-CH 60V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 293W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock4 208
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 1mA
114nC @ 10V
8920pF @ 25V
±20V
-
293W (Tc)
3.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK752R7-60E,127
NXP

MOSFET N-CH 60V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock4 784
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 1mA
158nC @ 10V
11180pF @ 25V
±20V
-
349W (Tc)
2.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK751R6-30E,127
NXP

MOSFET N-CH 30V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11960pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock6 864
MOSFET (Metal Oxide)
30V
120A (Tc)
10V
4V @ 1mA
154nC @ 10V
11960pF @ 25V
±20V
-
349W (Tc)
1.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK7514-60E,127
NXP

MOSFET N-CH 60V 58A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock2 720
MOSFET (Metal Oxide)
60V
58A (Tc)
10V
4V @ 1mA
22.9nC @ 10V
1730pF @ 25V
±20V
-
96W (Tc)
13 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHL5830AL,115
NXP

MOSFET N-CH 30V 8HVSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Stock4 192
MOSFET (Metal Oxide)
30V
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK9609-55A,118
NXP

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4633pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 680
MOSFET (Metal Oxide)
55V
75A (Tc)
4.5V, 10V
2V @ 1mA
60nC @ 5V
4633pF @ 25V
±15V
-
211W (Tc)
8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK78150-55A,115
NXP

MOSFET N-CH 55V 5.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
paquet: TO-261-4, TO-261AA
Stock2 448
MOSFET (Metal Oxide)
55V
5.5A (Tc)
10V
4V @ 1mA
-
230pF @ 25V
±20V
-
8W (Tc)
150 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
BUK7609-55A,118
NXP

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 0V
  • Input Capacitance (Ciss) (Max) @ Vds: 3271pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5 840
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 1mA
62nC @ 0V
3271pF @ 25V
±20V
-
211W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB