Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220SIS
|
paquet: TO-220-3 Full Pack, Isolated Tab |
Stock6 672 |
|
MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | ±30V | - | 45W (Tc) | 140 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-247
|
paquet: TO-247-3 |
Stock7 904 |
|
MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | ±30V | - | 180W (Tc) | 125 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 17A TO220-3
|
paquet: TO-220-3 |
Stock9 120 |
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MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 4V @ 850µA | 32nC @ 10V | 2050pF @ 300V | ±20V | - | 180W (Tc) | 290 mOhm @ 8.5A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-3PN
|
paquet: TO-220-3 Full Pack, Isolated Tab |
Stock7 044 |
|
MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | ±30V | - | 45W (Tc) | 125 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 17A TO220-3
|
paquet: TO-220-3 Full Pack |
Stock7 704 |
|
MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 4V @ 850µA | 32nC @ 10V | 2050pF @ 300V | ±20V | - | 45W (Tc) | 290 mOhm @ 8.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A T0247
|
paquet: TO-247-3 |
Stock7 416 |
|
MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | ±30V | - | 165W (Tc) | 200 mOhm @ 8.7A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220-3
|
paquet: TO-220-3 |
Stock8 064 |
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MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 4V @ 570µA | 23nC @ 10V | 1400pF @ 300V | ±20V | - | 165W (Tc) | 450 mOhm @ 5.8A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220-3
|
paquet: TO-220-3 Full Pack |
Stock10 548 |
|
MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 4V @ 570µA | 23nC @ 10V | 1400pF @ 300V | ±20V | - | 45W (Tc) | 450 mOhm @ 5.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-247
|
paquet: TO-247-3 |
Stock6 352 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | ±30V | - | 130W (Tc) | 300 mOhm @ 6.9A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 9.5A TO220-3
|
paquet: TO-220-3 Full Pack |
Stock7 728 |
|
MOSFET (Metal Oxide) | 800V | 9.5A (Ta) | 10V | 4V @ 450µA | 19nC @ 10V | 1150pF @ 300V | ±20V | - | 40W (Tc) | 550 mOhm @ 4.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N -CH 600V 30.8A DFN
|
paquet: 4-VSFN Exposed Pad |
Stock19 758 |
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MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | ±30V | - | 240W (Tc) | 109 mOhm @ 15.4A, 10V | 150°C (TA) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
paquet: 8-PowerVDFN |
Stock46 284 |
|
MOSFET (Metal Oxide) | 60V | 100A | 4.5V, 10V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | ±20V | - | 134W (Tc) | 4.4 mOhm @ 30A, 4.5V | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A DPAK-0S
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock238 692 |
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MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | ±30V | - | 100W (Tc) | 440 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
paquet: 8-PowerVDFN |
Stock41 244 |
|
MOSFET (Metal Oxide) | 30V | 150A | 4.5V, 10V | 2.1V @ 500µA | 80nC @ 10V | 7540pF @ 15V | ±20V | - | 132W (Tc) | - | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock16 596 |
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MOSFET (Metal Oxide) | 650V | 9.3A (Ta) | 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | ±30V | - | 80W (Tc) | 560 mOhm @ 4.6A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock17 526 |
|
MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | ±30V | - | 80W (Tc) | 560 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR DPAK(OS) PD
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock16 152 |
|
MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | ±30V | - | 100W (Tc) | 290 mOhm @ 5.8A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock16 554 |
|
MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | ±30V | - | 60W (Tc) | 800 mOhm @ 3.4A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR DPAK(OS) PD
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock34 878 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Tc) | 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | ±30V | - | 100W (Tc) | 290 mOhm @ 5.8A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR DPAK(OS) PD
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock31 818 |
|
MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | ±30V | - | 60W (Tc) | 560 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
paquet: 8-PowerVDFN |
Stock48 006 |
|
MOSFET (Metal Oxide) | 60V | 60A | 4.5V, 10V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | ±20V | - | 81W (Tc) | 13.5 mOhm @ 10A, 4.5V | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
paquet: 8-PowerVDFN |
Stock26 286 |
|
MOSFET (Metal Oxide) | 30V | 88A | 4.5V, 10V | 2.1V @ 300µA | 50nC @ 10V | 3825pF @ 15V | ±20V | - | 90W (Tc) | 4.2 mOhm @ 44A, 4.5V | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR DPAK(OS) PD
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock35 160 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | ±30V | - | 60W (Tc) | 560 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
paquet: 8-PowerVDFN |
Stock24 258 |
|
MOSFET (Metal Oxide) | 40V | 48A | 4.5V, 10V | 2.4V @ 200µA | 24nC @ 10V | 2040pF @ 20V | ±20V | - | 69W (Tc) | 9.7 mOhm @ 15A, 4.5V | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 3.5A SOT-23F
|
paquet: SOT-23-3 Flat Leads |
Stock23 826 |
|
MOSFET (Metal Oxide) | 60V | 3.5A (Ta) | 4V, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | +10V, -20V | - | 2W (Ta) | 134 mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A UDFN6B
|
paquet: 6-WDFN Exposed Pad |
Stock27 780 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | ±20V | - | 1.25W (Ta) | 19.5 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A CST3B
|
paquet: 3-SMD, No Lead |
Stock85 272 |
|
MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | ±12V | - | 1W (Ta) | 215 mOhm @ 1A, 8V | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 30V 2A 3SMD
|
paquet: 3-SMD, Flat Leads |
Stock25 710 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 2.6V @ 1mA | - | 280pF @ 15V | ±20V | - | 500mW (Ta) | 117 mOhm @ 1A, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
X34 PB USM S-MOS (LF) TRANSISTOR
|
paquet: SC-70, SOT-323 |
Stock82 932 |
|
MOSFET (Metal Oxide) | 30V | 400mA (Ta) | 3.3V, 10V | 1.8V @ 100µA | - | 20pF @ 5V | ±20V | - | 150mW (Ta) | 700 mOhm @ 200MA, 10V | 150°C | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
SMALL-SIGNAL PCH MOSFET UMOSVI
|
paquet: - |
Stock52 074 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | +6V, -8V | - | 1.5W (Ta) | 32.5 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | - | - |