Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.9A TSM
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock5 088 |
|
MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | ±20V | - | 700mW (Ta) | 83 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH SGL 30V 0.1A SSM
|
paquet: SC-75, SOT-416 |
Stock3 040 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 7.8pF @ 3V | ±20V | - | 200mW (Ta) | 4 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 1.2A UFM
|
paquet: 3-SMD, Flat Leads |
Stock3 776 |
|
MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 4V, 10V | 2.3V @ 100µA | - | 36pF @ 10V | ±20V | - | 500mW (Ta) | 310 mOhm @ 600mA, 10V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 4A TO-220SIS
|
paquet: TO-220-3 Full Pack |
Stock7 664 |
|
MOSFET (Metal Oxide) | 600V | 4A (Ta) | 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | ±30V | - | 35W (Tc) | 1.7 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A ES6
|
paquet: SOT-563, SOT-666 |
Stock6 240 |
|
MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 2.5V | 1V @ 1mA | 10.6nC @ 4V | 568pF @ 10V | ±8V | - | 500mW (Ta) | 136 mOhm @ 1A, 2.5V | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 9.5A UF6
|
paquet: 6-SMD, Flat Leads |
Stock3 312 |
|
MOSFET (Metal Oxide) | 20V | 9.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 15nC @ 4.5V | 1100pF @ 10V | ±8V | - | 1W (Ta) | 22.1 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 1.9A UFV
|
paquet: 6-SMD (5 Leads), Flat Lead |
Stock6 608 |
|
MOSFET (Metal Oxide) | 30V | 1.9A (Ta) | 1.8V, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | ±12V | Schottky Diode (Isolated) | 500mW (Ta) | 133 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | UFV | 6-SMD (5 Leads), Flat Lead |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V .5A CST4
|
paquet: 4-SMD, No Lead |
Stock3 440 |
|
MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4V | 1.1V @ 1mA | - | 174pF @ 10V | ±12V | - | 400mW (Ta) | 205 mOhm @ 250mA, 4V | 150°C (TJ) | Surface Mount | CST4 (1.2x0.8) | 4-SMD, No Lead |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 4A TSM
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock3 376 |
|
MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | ±12V | - | 700mW (Ta) | 53 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A TSM
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock6 656 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10.1nC @ 10V | 450pF @ 15V | ±20V | - | 700mW (Ta) | 27.6 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.2A TSM
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock2 192 |
|
MOSFET (Metal Oxide) | 20V | 5.2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | ±8V | - | 700mW (Ta) | 46 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.6A UFM
|
paquet: 3-SMD, Flat Leads |
Stock144 000 |
|
MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | ±8V | - | 500mW (Ta) | 46 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B
|
paquet: 8-SOIC (0.173", 4.40mm Width) |
Stock6 768 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | ±20V | - | 1W (Ta) | 3.2 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A PS-8
|
paquet: 8-SMD, Flat Lead |
Stock4 048 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | ±20V | - | 840mW (Ta) | 12.9 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8-SOP
|
paquet: 8-SOIC (0.173", 4.40mm Width) |
Stock2 368 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 56nC @ 10V | 2900pF @ 10V | ±20V | - | 1W (Ta) | 3.4 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 2.2A PS-8
|
paquet: 8-SMD, Flat Lead |
Stock3 984 |
|
MOSFET (Metal Oxide) | 100V | 2.2A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 7.5nC @ 10V | 360pF @ 10V | ±20V | - | 840mW (Ta) | 180 mOhm @ 1.1A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 44A 8SOP ADV
|
paquet: 8-PowerVDFN |
Stock5 376 |
|
MOSFET (Metal Oxide) | 30V | 44A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 59nC @ 10V | 5700pF @ 10V | ±20V | - | - | 3.2 mOhm @ 22A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 34A 8SOP ADV
|
paquet: 8-PowerVDFN |
Stock6 848 |
|
MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 36nC @ 10V | 3430pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 5.3 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 38A 8SOIC ADV
|
paquet: 8-PowerVDFN |
Stock2 544 |
|
MOSFET (Metal Oxide) | 30V | 38A (Ta) | 4.5V, 10V | 2.3V @ 500µA | 50nC @ 10V | 4600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 4.2 mOhm @ 19A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 8SOIC ADV
|
paquet: 8-PowerVDFN |
Stock6 928 |
|
MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 49nC @ 10V | 2200pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 3.5 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8-SOIC
|
paquet: 8-SOIC (0.173", 4.40mm Width) |
Stock3 424 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 49nC @ 10V | 4600pF @ 10V | ±20V | - | 1W (Ta) | 4.5 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8-SOIC
|
paquet: 8-SOIC (0.173", 4.40mm Width) |
Stock7 840 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 42nC @ 10V | 1800pF @ 10V | ±20V | - | 1W (Ta) | 6.6 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4.5A PW-MOLD2
|
paquet: TO-251-3 Stub Leads, IPak |
Stock3 040 |
|
MOSFET (Metal Oxide) | 250V | 4.5A (Ta) | 10V | 3.5V @ 1mA | 10nC @ 10V | 440pF @ 10V | ±20V | - | 20W (Tc) | 1 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 5A PW-MOLD2
|
paquet: TO-251-3 Stub Leads, IPak |
Stock7 456 |
|
MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 2.5V @ 1mA | 15nC @ 10V | 730pF @ 10V | ±20V | - | 20W (Tc) | 100 mOhm @ 2.5A, 10V | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS
|
paquet: TO-220-3 Full Pack |
Stock3 456 |
|
MOSFET (Metal Oxide) | 600V | 13A (Ta) | 10V | 4V @ 1mA | 62nC @ 10V | 3100pF @ 25V | ±30V | - | 50W (Tc) | 500 mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-3PN
|
paquet: TO-3P-3, SC-65-3 |
Stock3 584 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 4V @ 1mA | 60nC @ 10V | 4250pF @ 25V | ±30V | - | 150W (Tc) | 330 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS
|
paquet: TO-220-3 Full Pack |
Stock4 256 |
|
MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 550pF @ 25V | ±30V | - | 35W (Tc) | 1.7 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220NIS
|
paquet: TO-220-3 Full Pack |
Stock77 400 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 10V | 4V @ 1mA | 196nC @ 10V | 12400pF @ 10V | ±20V | - | 45W (Tc) | 5.8 mOhm @ 23A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 35A TO220NIS
|
paquet: TO-220-3 Full Pack |
Stock3 408 |
|
MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4V, 10V | 2.5V @ 1mA | 91nC @ 10V | 5120pF @ 10V | ±20V | - | 35W (Tc) | 12.5 mOhm @ 18A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A SC-97
|
paquet: SC-97 |
Stock5 344 |
|
MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 4V @ 1mA | 17nC @ 10V | 780pF @ 10V | ±30V | - | 50W (Tc) | 1.5 Ohm @ 5A, 10V | 150°C (TJ) | Surface Mount | TFP (9.2x10.7) | SC-97 |