Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET P-CH
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paquet: TO-220-3 Full Pack |
Stock3 792 |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM
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paquet: - |
Stock7 488 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A 5DFN
|
paquet: 4-VSFN Exposed Pad |
Stock2 512 |
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MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | ±30V | Super Junction | 139W (Tc) | 190 mOhm @ 7.9A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A 5DFN
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paquet: 4-VSFN Exposed Pad |
Stock6 048 |
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MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 104W (Tc) | 300 mOhm @ 5.8A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.7A TSM
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock6 336 |
|
MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4V | - | - | 1020pF @ 10V | ±12V | - | 700mW (Ta) | 31 mOhm @ 4A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3A TSM
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock2 048 |
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MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 4V | - | 4.3nC @ 4V | 270pF @ 10V | ±12V | - | 700mW (Ta) | 71 mOhm @ 2A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3.2A TSM
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock29 748 |
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MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 2.5V, 4V | - | - | 152pF @ 10V | ±10V | - | 1.25W (Ta) | 120 mOhm @ 1.6A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A SSM
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paquet: SC-75, SOT-416 |
Stock396 000 |
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MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | - | - | 8.5pF @ 3V | 10V | - | 100mW (Ta) | 12 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.7A TSM
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock35 436 |
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MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4V, 10V | - | - | 413pF @ 15V | ±20V | - | 700mW (Ta) | 85 mOhm @ 1.35A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USV
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paquet: 5-TSSOP, SC-70-5, SOT-353 |
Stock3 632 |
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MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | - | - | 8.5pF @ 3V | 10V | - | 200mW (Ta) | 12 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A IPAK
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paquet: TO-251-3 Stub Leads, IPak |
Stock3 136 |
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MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 100W (Tc) | 340 mOhm @ 5.8A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock240 000 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 100W (Tc) | 340 mOhm @ 5.8A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS
|
paquet: TO-220-3 Full Pack, Isolated Tab |
Stock5 216 |
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MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 3.7V @ 1.5mA | 43nC @ 10V | 1350pF @ 300V | ±30V | Super Junction | 40W (Tc) | 190 mOhm @ 7.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 88A TO-220
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paquet: TO-220-3 |
Stock6 736 |
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MOSFET (Metal Oxide) | 120V | 88A (Tc) | 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | ±20V | - | 140W (Tc) | 9.4 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM
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paquet: SC-70, SOT-323 |
Stock5 264 |
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MOSFET (Metal Oxide) | 50V | 100mA (Ta) | - | 1.5V @ 1µA | - | 7pF @ 3V | - | - | 150mW (Ta) | 20 Ohm @ 10mA, 4V | - | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A 8TSON-ADV
|
paquet: 8-PowerVDFN |
Stock15 120 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 9.5nC @ 10V | 690pF @ 10V | ±20V | - | 700mW (Ta), 15W (Tc) | 25 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8TSON-ADV
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paquet: 8-PowerVDFN |
Stock3 184 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 15nC @ 10V | 1100pF @ 10V | ±20V | - | 700mW (Ta), 17W (Tc) | 15 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON-ADV
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paquet: 8-PowerVDFN |
Stock273 600 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 20nC @ 10V | 1350pF @ 10V | ±20V | - | 700mW (Ta), 18W (Tc) | 11.4 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A 8TSON-ADV
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paquet: 8-PowerVDFN |
Stock2 704 |
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MOSFET (Metal Oxide) | 30V | 24A (Ta) | - | 3V @ 200µA | 26nC @ 10V | 1270pF @ 10V | - | - | - | 7 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 12A 8SOP
|
paquet: 8-SOIC (0.173", 4.40mm Width) |
Stock3 200 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 19nC @ 10V | 1800pF @ 10V | ±20V | Schottky Diode (Body) | - | 10.1 mOhm @ 6A, 10V | - | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 10A 8SOP
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paquet: 8-SOIC (0.173", 4.40mm Width) |
Stock6 752 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 15nC @ 10V | 1700pF @ 10V | ±20V | Schottky Diode (Body) | 1W (Ta) | 13.3 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A 8SOP
|
paquet: 8-SOIC (0.173", 4.40mm Width) |
Stock5 888 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2V @ 500µA | 56nC @ 10V | 2400pF @ 10V | +20V, -25V | - | 1W (Ta) | 10 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8SOP
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock7 568 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2V @ 500µA | 64nC @ 10V | 2580pF @ 10V | +20V, -25V | - | 1W (Ta) | 13 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 6A VS6
|
paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock373 284 |
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MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 1.2V @ 200µA | 9nC @ 5V | 630pF @ 10V | ±12V | - | 700mW (Ta) | 20 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A VS6
|
paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock3 920 |
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MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 14nC @ 10V | 640pF @ 10V | ±20V | - | 700mW (Ta) | 20 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6.1A VS6
|
paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock6 688 |
|
MOSFET (Metal Oxide) | 60V | 6.1A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | ±20V | - | 700mW (Ta) | 59 mOhm @ 3.1A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 5.3A VS6
|
paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock3 392 |
|
MOSFET (Metal Oxide) | 40V | 5.3A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 4.7nC @ 10V | 290pF @ 10V | ±20V | - | 700mW (Ta) | 81 mOhm @ 2.7A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 5.9A VS6
|
paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock3 632 |
|
MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 4.8nC @ 10V | 300pF @ 10V | ±20V | - | 700mW (Ta) | 60 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 50A TO-220AB
|
paquet: - |
Stock4 400 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB
|
paquet: TO-220-3 |
Stock5 408 |
|
MOSFET (Metal Oxide) | 75V | 50A | - | - | 55nC @ 10V | - | - | - | - | 12 mOhm @ 25A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |