Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A
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paquet: 8-PowerVDFN |
Stock3 440 |
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MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.24 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 24A 8-SOP
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paquet: 8-PowerVDFN |
Stock3 264 |
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MOSFET (Metal Oxide) | 100V | 24A (Tc) | 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 50V | ±20V | - | 1.6W (Ta), 48W (Tc) | 13.6 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 60A 8SOP ADV
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paquet: 8-PowerVDFN |
Stock2 240 |
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MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | ±12V | - | 78W (Tc) | 1.7 mOhm @ 30A, 4.5V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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paquet: 8-PowerVDFN |
Stock3 152 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 10V @ 10µA | 41nC @ 10V | 3900pF @ 15V | ±20V | - | 104W (Tc) | 1.2 mOhm @ 80A, 10V | 175°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A DPAK
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2 416 |
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MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | ±30V | - | 60W (Tc) | 1.05 Ohm @ 2.9A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 28A 8-SOP ADV
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paquet: 8-PowerVDFN |
Stock43 386 |
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MOSFET (Metal Oxide) | 80V | 28A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 91nC @ 10V | 7540pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 9.4 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8SOP
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paquet: 8-PowerVDFN |
Stock3 312 |
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MOSFET (Metal Oxide) | 150V | 9A (Ta) | 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | ±20V | - | 1.6W (Ta), 42W (Tc) | 59 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8TSON
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paquet: 8-PowerVDFN |
Stock3 760 |
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MOSFET (Metal Oxide) | 150V | 9A (Ta) | 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | ±20V | - | 700mW (Ta), 39W (Tc) | 59 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 17A 8TSON-ADV
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paquet: 8-PowerVDFN |
Stock6 608 |
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MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | ±20V | - | 700mW (Ta), 42W (Tc) | 16 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-TSON
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paquet: 8-PowerVDFN |
Stock3 216 |
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MOSFET (Metal Oxide) | 30V | 45A (Tc) | 10V | 2.3V @ 500µA | 34nC @ 10V | 2230pF @ 15V | ±20V | - | 700mW (Ta), 42W (Tc) | 2.2 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 50A SOP-8 ADV
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paquet: 8-PowerVDFN |
Stock68 754 |
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MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 88nC @ 10V | 7800pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 2.8 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 19A 8SOP
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paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock4 864 |
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MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | ±20V | - | 1W (Tc) | 6.2 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 27A 8TSON-ADV
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paquet: 8-PowerVDFN |
Stock5 088 |
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MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | ±20V | - | 700mW (Ta), 32W (Tc) | 6 mOhm @ 13.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 50A DP TO252-3
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6 544 |
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MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 25.3nC @ 10V | 1700pF @ 10V | ±20V | - | 47W (Tc) | 7.5 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 9A 8-TSON
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paquet: 8-PowerVDFN |
Stock3 328 |
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MOSFET (Metal Oxide) | 60V | 9A (Ta) | 6.5V, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | ±20V | - | 700mW (Ta), 18W (Tc) | 22 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 4.8A PS-8
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paquet: 8-SMD, Flat Lead |
Stock2 064 |
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MOSFET (Metal Oxide) | 40V | 4.8A (Ta) | 4.5V, 10V | 2V @ 1mA | 19nC @ 10V | 800pF @ 10V | ±20V | - | 840mW (Ta) | 40 mOhm @ 2.4A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-SOP ADV
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paquet: 8-PowerVDFN |
Stock69 690 |
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MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 113nC @ 10V | 4200pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 2.2 mOhm @ 23A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A TSON
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paquet: 8-PowerVDFN |
Stock4 176 |
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MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.4V @ 0.3mA | 41nC @ 10V | 3600pF @ 20V | ±20V | - | 630mW (Ta), 104W (Tc) | 2.3 mOhm @ 40A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5A 6WCSP
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paquet: 6-UFBGA, WLCSP |
Stock2 656 |
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MOSFET (Metal Oxide) | 20V | 5A (Ta) | 2.5V, 8.5V | 1.2V @ 1mA, 3V | 9.8nC @ 4.5V | 870pF @ 10V | ±12V | - | 1.2W (Ta) | 31 mOhm @ 3A, 8.5V | 150°C (TJ) | Surface Mount | - | 6-UFBGA, WLCSP |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 15A 8SOP
|
paquet: 8-SOIC (0.154", 3.90mm Width) |
Stock5 936 |
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MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 2.3V @ 100µA | 9.8nC @ 10V | 820pF @ 15V | ±20V | - | 1W (Tc) | 9.1 mOhm @ 7.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.5A VS-6
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paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock7 792 |
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MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 10nC @ 5V | 700pF @ 10V | ±8V | - | 700mW (Ta) | 40 mOhm @ 2.8A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A ES6
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paquet: SOT-563, SOT-666 |
Stock3 104 |
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MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 2.6V @ 1mA | - | 137pF @ 15V | ±20V | - | 500mW (Ta) | 251 mOhm @ 650mA, 10V | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.5A UFV
|
paquet: 6-SMD (5 Leads), Flat Lead |
Stock36 000 |
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MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | ±8V | Schottky Diode (Isolated) | 500mW (Ta) | 213 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | UFV | 6-SMD (5 Leads), Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A CST3B
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paquet: 3-SMD, No Lead |
Stock81 744 |
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MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | ±8V | - | - | 103 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.2A S-MINI
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock6 256 |
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MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 2.5V | - | - | 92pF @ 3V | ±20V | - | 200mW (Ta) | 4 Ohm @ 50mA, 2.5V | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM
|
paquet: 3-SMD, Flat Leads |
Stock4 176 |
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MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | ±8V | - | 500mW (Ta) | 149 mOhm @ 600mA, 4V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANCE
|
paquet: 3-SMD, Flat Leads |
Stock3 216 |
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MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.2V, 4.5V | 1V @ 1mA | 33nC @ 4.5V | 2700pF @ 10V | ±6V | - | 500mW (Ta) | 17 mOhm @ 5A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 12V 7A 6WCSP6C
|
paquet: 6-UFBGA, WLCSP |
Stock2 528 |
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MOSFET (Metal Oxide) | 12V | 7A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | 600pF @ 6V | ±8V | - | 1.6W (Ta) | 18 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-WCSPC (1.5x1.0) | 6-UFBGA, WLCSP |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A UF6
|
paquet: 6-SMD, Flat Leads |
Stock216 000 |
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MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | 1650pF @ 10V | ±8V | - | 1W (Ta) | 22.5 mOhm @ 6A, 4.5V | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A CST3
|
paquet: SC-101, SOT-883 |
Stock3 168 |
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MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | ±20V | - | 100mW (Ta) | 3.6 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |