Page 9 - Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Simples | Heisener Electronics
Contactez nous
SalesDept@heisener.com +86-755-83210135-818
Connexion/S'inscrire
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Chariot 0

Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Simples

Dossiers 1 075
Page  9/36
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SSM3K35MFV-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 180MA VESM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
paquet: -
Request a Quote
MOSFET (Metal Oxide)
20 V
180mA (Ta)
1.2V, 4V
1V @ 1mA
-
9.5 pF @ 3 V
±10V
-
150mW (Ta)
3Ohm @ 50mA, 4V
150°C
Surface Mount
VESM
SOT-723
TW030N120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 30MO

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 13mA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 249W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: -
Stock90
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
18V
5V @ 13mA
82 nC @ 18 V
2925 pF @ 800 V
+25V, -10V
-
249W (Tc)
40mOhm @ 30A, 18V
175°C
Through Hole
TO-247
TO-247-3
TPN11006PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 26A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta), 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock30 066
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
2.5V @ 200µA
17 nC @ 10 V
1625 pF @ 30 V
±20V
-
610mW (Ta), 61W (Tc)
11.4mOhm @ 13A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
SSM3J112TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.1A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: -
Stock2 244
MOSFET (Metal Oxide)
30 V
1.1A (Ta)
4V, 10V
1.8V @ 100µA
-
86 pF @ 15 V
±20V
-
800mW (Ta)
390mOhm @ 500mA, 10V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
XPQ1R004PB-LXHQ
Toshiba Semiconductor and Storage

40V U-MOS IX-H L-TOGL 1.0MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: L-TOGL™
  • Package / Case: 8-PowerBSFN
paquet: -
Request a Quote
MOSFET (Metal Oxide)
40 V
200A (Ta)
6V, 10V
3V @ 500µA
84 nC @ 10 V
6890 pF @ 10 V
±20V
-
230W (Tc)
1mOhm @ 100A, 10V
175°C
Surface Mount
L-TOGL™
8-PowerBSFN
SSM6K809R-LF
Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET N-CH VDSS=60

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock15 354
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3 nC @ 10 V
550 pF @ 10 V
±20V
-
1.5W (Ta)
36mOhm @ 5A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
TK40S06N1L-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock2 010
MOSFET (Metal Oxide)
60 V
40A (Ta)
4.5V, 10V
2.5V @ 200µA
26 nC @ 10 V
1650 pF @ 10 V
±20V
-
88.2W (Tc)
10.5mOhm @ 20A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM3J351R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -60V -3.5A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: -
Stock20 169
MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4V, 10V
2V @ 1mA
15.1 nC @ 10 V
660 pF @ 10 V
+10V, -20V
-
1W (Ta)
134mOhm @ 1A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM6G18NU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-µDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
paquet: -
Stock11 775
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
270 pF @ 10 V
±8V
Schottky Diode (Isolated)
1W (Ta)
112mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
6-µDFN (2x2)
6-WDFN Exposed Pad
TK2K2A60F-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Request a Quote
MOSFET (Metal Oxide)
600 V
3.5A (Ta)
10V
4V @ 350µA
13 nC @ 10 V
450 pF @ 300 V
±30V
-
30W (Tc)
2.2Ohm @ 1.8A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3K357R-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 650MA SOT23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 12 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: -
Stock156 039
MOSFET (Metal Oxide)
60 V
650mA (Ta)
3V, 5V
2V @ 1mA
1.5 nC @ 5 V
60 pF @ 12 V
±12V
-
1W (Ta)
1.8Ohm @ 150mA, 5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM6J412TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UF6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Request a Quote
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
±8V
-
1W (Ta)
42.7mOhm @ 3A, 4.5V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
TJ20S04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 20A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock29 727
MOSFET (Metal Oxide)
40 V
20A (Ta)
6V, 10V
3V @ 1mA
37 nC @ 10 V
1850 pF @ 10 V
+10V, -20V
-
41W (Tc)
22.2mOhm @ 10A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK16J60W5-S1VQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
paquet: -
Stock63
MOSFET (Metal Oxide)
600 V
15.8A (Ta)
10V
4.5V @ 790µA
43 nC @ 10 V
1350 pF @ 300 V
±30V
-
130W (Tc)
230mOhm @ 7.9A, 10V
150°C
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
TK16V60W5-LVQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DTM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
paquet: -
Stock7 500
MOSFET (Metal Oxide)
600 V
15.8A (Ta)
10V
4.5V @ 790µA
43 nC @ 10 V
1350 pF @ 300 V
±30V
-
139W (Tc)
245mOhm @ 7.9A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
TK155E65Z-S1X
Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 155MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock132
MOSFET (Metal Oxide)
650 V
18A (Ta)
10V
4V @ 730µA
29 nC @ 10 V
1635 pF @ 300 V
±30V
-
150W (Tc)
155mOhm @ 9A, 10V
150°C
Through Hole
TO-220
TO-220-3
SSM3K2615TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: -
Stock43 317
MOSFET (Metal Oxide)
60 V
2A (Ta)
3.3V, 10V
2V @ 1mA
6 nC @ 10 V
150 pF @ 10 V
±20V
-
800mW (Ta)
300mOhm @ 1A, 10V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
TJ90S04M3L-LQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock504
MOSFET (Metal Oxide)
40 V
90A (Ta)
4.5V, 10V
2V @ 1mA
172 nC @ 10 V
7700 pF @ 10 V
+10V, -20V
-
180W (Tc)
4.3mOhm @ 45A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK1R4S04PB-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock8 601
MOSFET (Metal Oxide)
40 V
120A (Ta)
6V, 10V
3V @ 500µA
103 nC @ 10 V
5500 pF @ 10 V
±20V
-
180W (Tc)
1.9mOhm @ 60A, 6V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK7R4A10PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Request a Quote
MOSFET (Metal Oxide)
100 V
50A (Tc)
4.5V, 10V
2.5V @ 500µA
44 nC @ 10 V
2800 pF @ 50 V
±20V
-
42W (Tc)
7.4mOhm @ 25A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPH2R003PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock33 024
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
2.1V @ 500µA
86 nC @ 10 V
6410 pF @ 15 V
±20V
-
830mW (Ta), 116W (Tc)
2mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK28E65W-S1X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock150
MOSFET (Metal Oxide)
650 V
27.6A (Ta)
10V
3.5V @ 1.6mA
75 nC @ 10 V
3000 pF @ 300 V
±30V
-
230W (Tc)
110mOhm @ 13.8A, 10V
150°C
Through Hole
TO-220
TO-220-3
TK7R0E08QM-S1X
Toshiba Semiconductor and Storage

UMOS10 TO-220AB 80V 7MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock360
MOSFET (Metal Oxide)
80 V
64A (Tc)
6V, 10V
3.5V @ 500µA
39 nC @ 10 V
2700 pF @ 40 V
±20V
-
87W (Tc)
7mOhm @ 32A, 10V
175°C
Through Hole
TO-220
TO-220-3
TPH1R405PL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 45V 120A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 22.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock14 880
MOSFET (Metal Oxide)
45 V
120A (Tc)
4.5V, 10V
2.4V @ 500µA
74 nC @ 10 V
6300 pF @ 22.5 V
±20V
-
960mW (Ta), 132W (Tc)
1.4mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
SSM3J331R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: -
Stock56 208
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
10.4 nC @ 4.5 V
630 pF @ 10 V
±8V
-
1W (Ta)
55mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TPN2R805PL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 45V 80A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock14 634
MOSFET (Metal Oxide)
45 V
80A (Tc)
4.5V, 10V
2.4V @ 300µA
39 nC @ 10 V
3200 pF @ 22.5 V
±20V
-
2.67W (Ta), 104W (Tc)
2.8mOhm @ 40A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TK10A50W-S5X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock414
MOSFET (Metal Oxide)
500 V
9.7A (Ta)
10V
3.7V @ 500µA
20 nC @ 10 V
700 pF @ 300 V
±30V
-
30W (Tc)
380mOhm @ 4.9A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J375F-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -20V -2A SOT346

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock37 518
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
270 pF @ 10 V
+6V, -8V
-
600mW (Ta)
150mOhm @ 1A, 4.5V
150°C
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
SSM3J143TU-LXHF
Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-20V VGSS:-8/+6V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: -
Stock15 486
MOSFET (Metal Oxide)
20 V
5.5A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
+6V, -8V
-
500mW (Ta)
29.8mOhm @ 3A, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
TK33S10N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock11 547
MOSFET (Metal Oxide)
100 V
33A (Ta)
4.5V, 10V
2.5V @ 500µA
33 nC @ 10 V
2250 pF @ 10 V
±20V
-
125W (Tc)
9.7mOhm @ 16.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63