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Produits Vishay Semiconductor Diodes Division - Diodes - Redresseurs - Simples

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Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SE70PJ-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2.9A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.6µs
  • Current - Reverse Leakage @ Vr: 20µA @ 100V
  • Capacitance @ Vr, F: 76pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock6 352
600V
2.9A (DC)
1.05V @ 7A
Fast Recovery =< 500ns, > 200mA (Io)
2.6µs
20µA @ 100V
76pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SE70PG-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2.9A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.6µs
  • Current - Reverse Leakage @ Vr: 20µA @ 100V
  • Capacitance @ Vr, F: 76pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock2 240
400V
2.9A (DC)
1.05V @ 7A
Fast Recovery =< 500ns, > 200mA (Io)
2.6µs
20µA @ 100V
76pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SE70PD-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2.9A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 20µA @ 200V
  • Capacitance @ Vr, F: 76pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock5 232
200V
2.9A (DC)
1.05V @ 7A
Fast Recovery =< 500ns, > 200mA (Io)
2.5µs
20µA @ 200V
76pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SE70PB-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.9A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 20µA @ 100V
  • Capacitance @ Vr, F: 76pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock4 560
100V
2.9A (DC)
1.05V @ 7A
Fast Recovery =< 500ns, > 200mA (Io)
2.5µs
20µA @ 100V
76pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SL43-M3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 4A 30V DO-214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-214AB, SMC
Stock4 384
30V
4A
420mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
SL42-M3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 4A 20V DO-214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-214AB, SMC
Stock6 208
20V
4A
420mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
SL43-M3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 4A 30V DO-214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-214AB, SMC
Stock4 480
30V
4A
420mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
SL42-M3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 4A 20V DO-214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-214AB, SMC
Stock7 728
20V
4A
420mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
hot 1N5624-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: SOD-64, Axial
Stock600 000
200V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
7.5µs
1µA @ 200V
60pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-65°C ~ 175°C
AR3PK-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-277, 3-PowerDFN
Stock3 328
800V
1.6A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 800V
34pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
hot V10P45S-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 4.4A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 4.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock267 600
45V
4.4A (DC)
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
hot V10P45-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 4.4A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 4.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock464 100
45V
4.4A (DC)
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
V12PM12-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 12A 120V TO-277AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock4 976
120V
12A
800mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
V10P12HM3_A/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 120V 10A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock2 384
120V
10A
820mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
VS-4EWH02FNTRR-M3
Vishay Semiconductor Diodes Division

DIODE FRED 4A 200V DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 3µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock2 208
200V
4A
950mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
3µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
VS-4EWH02FNTRL-M3
Vishay Semiconductor Diodes Division

DIODE FRED 4A 200V DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 3µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock4 672
200V
4A
950mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
3µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
SS10P4-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock3 040
40V
10A
560mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 40V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
SS10P3-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock7 616
30V
10A
560mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 30V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
SSC53LHE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: DO-214AB, SMC
Stock5 344
30V
5A
450mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 150°C
V8PAL45-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 4A DO221BC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.85mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: DO-221BC, SMA Flat Leads Exposed Pad
Stock5 936
45V
4A (DC)
570mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.85mA @ 45V
-
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-40°C ~ 150°C
V8P12-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 8A 120V TO-277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: TO-277, 3-PowerDFN
Stock6 016
120V
8A
840mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
AS1PMHM3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-220AA
Stock2 912
1000V
1.5A (DC)
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 1000V
10.4pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
AS1PKHM3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-220AA
Stock6 976
800V
1.5A (DC)
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 800V
10.4pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
AS1PJHM3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-220AA
Stock3 136
600V
1.5A (DC)
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 600V
10.4pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
AS1PGHM3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-220AA
Stock4 336
400V
1.5A (DC)
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 400V
10.4pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
AS1PDHM3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-220AA
Stock5 120
200V
1.5A (DC)
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 200V
10.4pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
AS1PBHM3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -
paquet: DO-220AA
Stock2 096
100V
1.5A (DC)
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 100V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-
hot ES3DHE3_A/H
Vishay Semiconductor Diodes Division

DIODE UFAST 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AB, SMC
Stock240 000
200V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C