Page 173 - Produits Vishay Semiconductor Diodes Division - Diodes - Redresseurs - Simples

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SE70PJHM3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock7 040	600V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 600V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SE70PJHM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock6 960	600V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 600V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SE70PGHM3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock2 736	400V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 400V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SE70PGHM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock5 040	400V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 400V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SE70PDHM3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 200V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock7 456	200V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 200V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SE70PDHM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 200V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock2 096	200V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 200V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SE70PBHM3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 100V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock5 632	100V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 100V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SE70PBHM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 100V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	paquet: TO-277, 3-PowerDFN	Stock5 072	100V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 100V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
1N5417TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock5 504	200V	3A	1.5V @ 9A	Standard Recovery >500ns, > 200mA (Io)	100ns	1µA @ 200V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
BYT56B-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock7 664	100V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 100V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
BYT56A-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 50V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock2 144	50V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 50V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
BYT56B-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock3 360	100V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 100V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
BYT56A-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 50V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock4 896	50V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 50V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
1N5626-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock3 584	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	7.5µs	1µA @ 200V	60pF @ 4V, 1MHz	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
1N5417-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	paquet: SOD-64, Axial	Stock76 608	200V	3A	1.5V @ 9A	Standard Recovery >500ns, > 200mA (Io)	100ns	1µA @ 200V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
VT5200-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 5A 200V TO-220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-220-2	Stock3 248	200V	5A	1.6V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 200V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
VBT5200-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 5A 200V TO-263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2 256	200V	5A	1.6V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
UGE5JT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 5A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-220-2	Stock2 976	600V	5A	1.75V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UGE5HT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 5A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 30µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-220-2	Stock7 792	500V	5A	1.75V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 500V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
V12PM12-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 12A 120V TO-277AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock296 820	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
V10P12HM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 120V 10A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 820mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock3 392	120V	10A	820mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
VS-5EWH06FN-M3	Vishay Semiconductor Diodes Division	DIODE FRED 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4 992	600V	5A	1.85V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
VS-5EWX06FNTRR-M3	Vishay Semiconductor Diodes Division	DIODE FRED 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 18ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6 608	600V	5A	2.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	20µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
VS-5EWX06FNTRL-M3	Vishay Semiconductor Diodes Division	DIODE FRED 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5 152	600V	5A	2.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	20µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
VS-5EWL06FNTRR-M3	Vishay Semiconductor Diodes Division	DIODE FRED 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 384	600V	5A	1.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	145ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
VS-5EWL06FNTRL-M3	Vishay Semiconductor Diodes Division	DIODE FRED 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6 960	600V	5A	1.85V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
VS-5EWH06FNTRR-M3	Vishay Semiconductor Diodes Division	DIODE FRED 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 192	600V	5A	1.85V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
VS-5EWH06FNTRL-M3	Vishay Semiconductor Diodes Division	DIODE FRED 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5 920	600V	5A	1.85V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C

SE70PJHM3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock7 040

600V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 600V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SE70PJHM3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock6 960

600V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 600V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SE70PGHM3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock2 736

400V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 400V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SE70PGHM3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock5 040

400V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 400V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SE70PDHM3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 200V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock7 456

200V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 200V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SE70PDHM3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 200V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock2 096

200V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 200V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SE70PBHM3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 100V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock5 632

100V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 100V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SE70PBHM3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 100V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-277, 3-PowerDFN

Stock5 072

100V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 100V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

1N5417TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock5 504

200V

3A

1.5V @ 9A

Standard Recovery >500ns, > 200mA (Io)

100ns

1µA @ 200V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

BYT56B-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock7 664

100V

3A

1.4V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

5µA @ 100V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

BYT56A-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock2 144

50V

3A

1.4V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

5µA @ 50V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

BYT56B-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock3 360

100V

3A

1.4V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

5µA @ 100V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

BYT56A-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock4 896

50V

3A

1.4V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

5µA @ 50V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

1N5626-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock3 584

600V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

7.5µs

1µA @ 200V

60pF @ 4V, 1MHz

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

1N5417-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

paquet: SOD-64, Axial

Stock76 608

200V

3A

1.5V @ 9A

Standard Recovery >500ns, > 200mA (Io)

100ns

1µA @ 200V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

VT5200-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 200V TO-220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-220-2

Stock3 248

200V

5A

1.6V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 200V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

VBT5200-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 200V TO-263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2 256

200V

5A

1.6V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

UGE5JT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-220-2

Stock2 976

600V

5A

1.75V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

30µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

UGE5HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 5A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 30µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-220-2

Stock7 792

500V

5A

1.75V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

30µA @ 500V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

V12PM12-M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 12A 120V TO-277AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock296 820

120V

12A

800mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

V10P12HM3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 120V 10A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock3 392

120V

10A

820mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

VS-5EWH06FN-M3

Vishay Semiconductor Diodes Division

DIODE FRED 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4 992

600V

5A

1.85V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

VS-5EWX06FNTRR-M3

Vishay Semiconductor Diodes Division

DIODE FRED 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6 608

600V

5A

2.9V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

18ns

20µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

VS-5EWX06FNTRL-M3

Vishay Semiconductor Diodes Division

DIODE FRED 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5 152

600V

5A

2.9V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

480ns

20µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

VS-5EWL06FNTRR-M3

Vishay Semiconductor Diodes Division

DIODE FRED 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 384

600V

5A

1.2V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

145ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

VS-5EWL06FNTRL-M3

Vishay Semiconductor Diodes Division

DIODE FRED 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6 960

600V

5A

1.85V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

VS-5EWH06FNTRR-M3

Vishay Semiconductor Diodes Division

DIODE FRED 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 192

600V

5A

1.85V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

VS-5EWH06FNTRL-M3

Vishay Semiconductor Diodes Division

DIODE FRED 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5 920

600V

5A

1.85V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C